查询词典 sic

A"subgrain Al layer"was usually observed at the Al side of a SiC/Al interface containing no"interface Si"; the layer was less than 1μm thick and a few degrees crystallographically misoriented form the Al matrix, with high density of dislocation generated in it.

在那些没有&界面Si&的真正的SiC/Al界面处靠Al一侧，普遍地形成一层厚度不到1μm的&亚晶铝带&，它紧靠SiC表面形成，与远离SiC的Al基体有几度的位向差。

Hot isostatically pressed nano-ceramics of monophasic SiC and Si3N4/SiC composite were studied,and the phase composition and ndcrostructure were characterized by XRD, TEM and HREM.

采用高温等静压工艺，制备了纳米结构的单相SiC及Si3N4／SiC复相陶瓷，并通过X射线衍射分析、透射及高分辨电镜对其相组成及结构进行了表征。

Results show that at 500℃ polycarbsilanedecomposed into noncrystallized SiC and free caron and impurities which hinder the densificationof the composite are also found during the above decomposition process, with the increase ofheating temperature, the noncrystallized SiC can be transformed into β-SiC.

一般传统的制备方法是，向C和SIC粉末中添加烧结助剂B，B；，A12O；；AIN等球磨混合，采用粉末冶金热压烧结；尽管采取了一些特殊的工艺手段和添加烧结助剂的方法，但该材料须在高于2000t时烧结且致密化效果较差［'1。

The theoretical analysis and the experimental results consistently show that, the oxidation of Si〓N〓-bonded SiC refractory adheres to the parabolical type rule of oxidation and the oxidation in the condition of actual BF operation is passive one.

在此基础上，综合SiC砖蚀损过程研究结果，阐述了炉墙传热过程与其蚀损的相互关系，进而探讨了高炉用Si〓N〓结合的SiC砖的适宜条件，提出了控制碱蚀、减轻热震破坏以及改善高炉用SiC质砖衬的使用效果的技术方向和途径。

The SiC-doped MgB2 superconductor has been a hot spot in superconducting field due to its excellent superconductive properties.

SiC掺杂MgB2体系由于其优异的超导性能而受到普遍关注并成为超导领域中一大研究热点，但是目前的研究大多集中在SiC对MgB2超导性能的影响上，对SiC的加入对MgB2烧结过程的影响研究很少。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

In the other hand, graphite carbon and SiC oxidizing produce CO、SiO〓 and in the same time CO separates graphite carbon partially, this effect will decrease decarburizing rate and corrosion rate for Al〓O〓-SiC-C brick. TiO〓 and SiO〓 protective layer forming and separating graphite carbon are the main factor of resistance smelting reduction molten slag-iron to corrode and the main feature of corrosion process.

Al〓O〓-C-SiC砖在侵蚀过程中，由于SiC氧化后产生CO，SiO，并析出碳和降低耐火材料气孔率及氧化形成的SiO〓成为保护膜，使熔体对耐火材料的侵蚀能力降低，这两种耐火材料的侵蚀速度都是随着使用时间延长，耐火材料侵蚀速度逐渐降低。

The metal element powders were mixed proportionally with ZrB2/ZrC/SiC ceramic powders in the cylinder mill, then the quaternary ZrB2/ZrC/SiC+Me ceramics were prepared by hot-pressing mixed powders.

将金属元素粉按一定配比与ZrB2、ZrC和SiC陶瓷粉末混合后热压制备了ZrB2/ZrC/SiC+Me 四元陶瓷，重点研究了四元陶瓷的密度、弯曲强度、断裂韧性、烧蚀性能以及烧蚀前、后的微观组织。

The results show that the best sintering process for SiC preform is 1100℃, 8 h in vacuum, by which the open porosity is 99.6% and the preform strength reaches 0.57MPa. The thermo-physical characteristics of 57% SiC/Al composites produced by this technique are as follows: the relative density is 98.7%; the thermal expansion coefficient is 7.5×10^(-6)℃^(-1) which almost matches those of GaAs and BeO; the thermal conductivity is 1.65×10^5W/K, which corresponds to that of Cu(15%)/W and decuples that of Kovar alloy; the density is close to that of aluminum and less than that of one fifth of Cu/W.

结果表明：经1100℃真空烧结8h的SiC预成形坯开孔率可以达到99.6%，抗压强度为0.57MPa；所制备的57%SiC/Al复合材料相对密度为98.7%，热膨胀系数为7.5×10^(-6)℃^(-1)，与GaAs、BeO的接近，热导率为1.65×10^5W/K，与传统Cu(l5%)/W相当，是柯伐合金的10倍，在密度上接近Al，不到Cu/W的1/5。

The joinings of graphite,SIC ceramic and 3D-C f /SiC composites were obtained by using silicone resin as a precursor at 800-1400℃.Effects of the curing and pyrolysis process of SR,pyrolysis temperature,holding time and heating rate on the joining were especially studied.

由硅树脂作为先驱体，在高温（800-1400℃）转化陶瓷结合层对石墨、SiC陶瓷及3D- C f/ SiC复合材料进行了连接实验，着重探讨了硅树脂固化裂解过程、裂解温度、保温时间及升温速率对连接性能的影响。

If you are unfortunate enough to the lovelorn, please tell me, I will help you out, really, please contact me!

如果你不幸失恋了，请告诉我，我会帮助你摆脱困境，真的，请联系我啦！

China's plan to cut energy intensity by 20 percent and pollutant discharges by 10 percent between 2006 and 2010 is a case in point.

中国计划在2006年到2010间降低20%的能源强度和减少10%的主要污染物排放，就是一个这样的例子。