查询词典 sic

The distributing of SiC in the composite material and the decomposer of SiC and interface between steel and SiC are analyzed too.

分析了SiC颗粒在基体中的分布状况、SiC颗粒在高温钢液和热处理过程中的分解以及其与基体的界面结合状况；同时还对制得的复合材料进行力学性能如显微硬度、硬度、耐磨性作了与基体金属的对比实验并分析了SiC颗粒的加入对于提高复合材料的性能的影响。

In friction experiment, SiC particles bear mostly the brake pressure as hard phase which could disperse effectively the brake pressure and avoid micro-area pressure concentration to obscission of SiC and fish tail dualization if the SiC content is proper.

在摩擦测试中，SiC作为硬质相是制动压力的主要承载支点，适当提高SiC含量能有效分散制动压力，避免微区压力集中造成SiC颗粒脱落和划伤对偶件。

The experimental results showed that SiC ultrafine powder was synthesized at 1500℃for 120 minutes by used rare earth lanthanum as additive. Its primary particle size was about 100nm and aggregated particle size was about 360nm and the particle shape was regulation, non-aggregation and well dispersibility. While the rare earth ceria used as the additive, SiC ultrafine powder was synthesized at 1500℃for 150 minutes but the particle shape was irregulation and seriously agglomerated and had numerous crystal whiskers.

实验结果表明：以稀土镧为添加剂时，在1500℃×120min合成工艺下，可以合成出一次粒径为100nm左右，二次粒径为360nm的SiC细粉，且SiC粉体颗粒形状规则，无团聚，分散性好；以稀土铈为添加剂时，在1500℃×150min合成工艺下，也可以得到单相的SiC，但SiC粉体颗粒形状不规则，有大量晶须存在，且团聚严重。

In the interfacial layer near to SiC, elements Pd and Ni preferentially diffused to SiC and resulted in the reaction products of Pd-Si phase, Ni-Si phase and graphite. In the reaction zone further away from the SiC, mainly elements Cr and V in the brazing filler participated in the interface reaction, and formed Cr-C, Cr-Si, Cr5Si3C. In the central part of the joint, the matrix was composed of Pd-Si, Ni-Si and V-Si phases, on which some blocky carbides V2C, Cr23C6 distributed scatteringly.

MPa。微观分析表明，在靠近SiC的界面反应层中，主要是Pd和Ni优先与SiC反应生成相应的Pd-Si相，Ni-Si相和石墨；接头中在离SiC稍远的区域，主要是Cr和V与母材扩散进入钎缝且未与Pd和Ni反应的C和Si发生反应，生成Cr-C， Cr-Si， Cr5Si3C 等相；钎缝中心区的基体由Pd-Si，Ni-Si和V-Si相组成，其上弥散分布着块状碳化物V2C和Cr23C6。

Investigating the influences of processing parameters on the C/Si molar ratio of resulted nanosized SiC powders indicated that there was a direct pyrolytic reaction from DMS to SiC as well as the previous proposed two-step reaction. Under the optimized processing conditions, the silicon carbide powders of homogeneous particle size distribution, spherical shape and stoichiometrical C/Si molar ratio are obtained. The silicon carbide particle consists of β-SiC crystallite arranged randomly.

论文系统研究了工艺条件对产物粉体C／Si摩尔比、粉体颗粒尺寸和组成粉体的SiC微晶尺寸的影响；研究了粉体制备过程中可能发生的化学反应，提出了反应过程中除了分步进行的生成SiC的反应外，同时在高温区还存在一步完成的生成SiC的化学反应的观点；通过调整工艺参数，制备得到了粉体尺寸分布均匀、呈均匀球状、C／Si摩尔比符合化学计量比的颗粒尺寸为40nm的纳米SiC粉体。

SiC nanowires grew at the surface of liquid ball and formed villiform nano wire-balls. During the cooling stage in some cases, the SiO reacted with the CO in the furnace to form SiO_2 which then deposited on the surface of SiC nanowires, forming the SiC/SiO_2 nanocable with SiC as the core and SiO_2 as the wrapping layer.

由于Ni-Si化合物跟石墨的浸润性较差，在仅比化合物熔点高出小于200℃的温度区域内，Ni-Si化合物熔体不能在石墨板上熔敷而是形成合金熔球，最后在熔球表面上生长出SiC纳米线形成形状独特的SiC纳米线绒球。

The role of single wettable Ni and Si、non-wettable SiC and complex SiC+Ni、SiC+Si coatings in Al/C composites on interface wettability、interface reaction and properties of composites was systematically studied in this paper.

论文系统研究了单一润湿涂层Ni、Si，非润湿涂层SiC和复合涂层SiC+Ni、SiC+Si在Al／C复合材料中对界面润湿、界面反应和性能的作用。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

The results show that during laser cladding, SiC of different forms is decompounded partially; with the increasing of the SiC adding content, the quantity of un-melt SiC increases and hardness of cladding layers improves.

结果表明，随着加入量的增加，熔覆层中未熔SiC含量增加，熔覆层硬度也随之提高；对比加入颗粒状和纤维状SiC的熔覆层的显微硬度表明，同含量情况下纤维状SiC的强化效果更显著；造成熔覆层硬度显著提高的原因是未熔SiC，析出相FeSiC的弥散强化和熔入的Si，C元素引起的固溶强化作用。

Fracture behavior study showed that, reinforced of SiC or Si〓N〓 nanoparticles, or SiC whiskers is due to cracks deflection, or twist, or diverse, or stop during propagating, and bridging and pulling-out of whiskers, and accompanied by fracture of a few SiC nanoparticles and whiskers.

断裂机理研究表明：裂纹扩展过程中遇到纳米SiC晶粒、纳米Si〓N〓晶粒和SiC晶须时，将发生偏转、扭曲、分叉、终止及晶须的桥接、拔出，并有少量SiC晶粒、Si〓N〓晶粒和SiC晶须断裂。

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如果你不幸失恋了，请告诉我，我会帮助你摆脱困境，真的，请联系我啦！

China's plan to cut energy intensity by 20 percent and pollutant discharges by 10 percent between 2006 and 2010 is a case in point.

中国计划在2006年到2010间降低20%的能源强度和减少10%的主要污染物排放，就是一个这样的例子。