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The experimental results show that the content of SiC in RBSC increases with carbon content while α-SiC is chosen as a filler. However, the residual carbon would appear in specimens when the carbon content exceeds 30% by weight. Using carbon felt, the reaction-formed SiC particles are small and uniform in size and distribution. However, when carbon felt is impregnated with phenol resin, the reaction-formed SiC is nonuniform in size and distribution. X-ray diffraction shows that the fabricated RBSC is composed of α-SiC,β-SiC, and free Si. The polytype of SiC is related to the reaction-heat during sintering.

结果表明:选用α-SiC+C粉的混合物作为生坯,SiC相的体积分数随生坯中wC的增加而增加,但过大的wC将使硅化后的试样出现残碳;选用碳毡作为生坯,反应烧结碳化硅的显微组织特点是C/Si反应生成的碳化硅颗粒均匀细小,并呈线状分布在游离硅中;浸渍过树脂的碳毡硅化处理后的显微组织特点是反应生成的碳化硅颗粒粗大且呈不均匀分布。X射线衍射结果也表明,反应烧结碳化硅陶瓷由游离Si、α-SiC、β-SiC组成,试样中不同晶型碳化硅的出现与C/Si反应的放热过程有关。

X-ray radiography, X-ray radioscopy and X-ray computed tomography were performed to the C preforms and C/SiC composites made by chemical vapor infiltration method. Elementary research of the simulation of X-ray nondestructive testing of C preforms and C/SiC composites was conducted. The main contents and conclusions are summarized as follows:(1) The equivalent absorption coefficients of graphite and SiC to Al (KAl/sic, KAI/C) were measured. It was found that in 35-45KV, KAl/sic=1.1~1.2 and KAl/c=0.08~0.12. That means X-ray radiography was much less sensitive to fiber defects than to SiC matrix. It was suggested that Al Image Quality Indicator would be used to evaluate the quality of X-ray radiographs of C/SiC.

本文选择X射线照相、X射线实时成像和X射线CT等三种方法对C纤维预制体及C/SiC复合材料进行了检测和研究,并对C/SiC复合材料X射线检测的计算机模拟做了初步的探索,主要研究内容和结果如下:(1)测定了C和SiC的X射线照相等效系数,在35~45KV的条件下,Al对SiC的等效系数K_为1.1~1.2,Al对C的等效系数K_为0.08~0.12,所以X照相射线检测C/SiC对C纤维缺陷不敏感,而对SiC基体缺陷敏感。

The SiC slurry catched high thixotropy when the SiC powders were coated all by hydrophile groups, and the viscosity of the SiC slurry would increase 1236.0mPas suddenly when its solid loading added from 57.4% to 58.5%; If the SiC powders were coated by lipophile group, the thixotropy of the SiC slurry would reduce and the enhancive scope of the high solid loading SiC slurry's viscosity would also be weakened.

改性粉表面全是亲水基团时,料浆触变性大,当固相体积含量由57.4%上升到58.5%时,料浆粘度突然增大1236.0mPaS;随着亲油基团的引入,料浆触变性降低,高固相含量时粘度增大平缓。

SiC polytypes of 6H and 15R and a transition zone between the two were observed under HREM and TEM and discussed from the point view of the crystal structures; the clear evidence of Al〓C〓 nucleated in the SiC particle was provided, indicating the aluminum penetrating the SiC grains is already carbon-saturated and, consequently, Al〓C〓 crystals grow in the particles wherever a temporary local supersaturating is produced; The experimental observation indicated that the types of the interface between SiC and Al are variable and the distribution feature of reaction product, Al〓C〓, were also given in the present work: to be nucleated on SiC, to be aggregated at SiC/Al interface zone or to be aggregated at the crystal boundaries.

通过高分辨透射电镜,本文观察到SiC增强体中6H和15R同质多晶现象及6H-15R SiC转变区,以及另外一种无序的SiC同质多晶,并从其晶体结构的角度解释了6H和15R在晶体内共存的现象。通过高分辨透射电镜,本文给出了Al〓C〓在SiC颗粒内部形核的明证,表明Al〓C〓形核是Al渗透到SiC颗粒内部在C过饱和处在SiC的(0006)面上而形核,而且一种可能的位相关系为A1〓C〓[11〓0]∥SiC[11〓0]。研究结果同时给出了SiC/Al复合材料的界面反应产物A1〓C〓的分布特征:在SiC上形核并生长,聚集于SiC/Al界面去附近,或者聚集于晶界上。

The effects of ultrasonication and HF washing on SiC nano-particles were analyzed by Zeta potential, particle size distribution and SEM. The stability of suspension of SiC in ethanol, ethanediol and mixture of the two medias with PEG as dispersant at different pH were compared. The optimum ultrasonication time for SiC nano-particles was obtained. The influence of HF washing on SiC nano-particles was discussed; and high stability of SiC nano-particles suspension was achieved at pH=10 in ethanediol with 1wt% PEG as dispersant.

本文中采用Zeta电位、粒度分析、SEM等测试技术分析了超声震荡和HF酸洗对SiC纳米粉体的影响:对比研究了乙醇、乙二醇以及75%乙醇和25%乙二醇混合液作为分散介质,聚乙二醇为分散剂时纳米SiC粉体在不同pH下的分散稳定性,确定了粉体最佳超声震荡的最佳时间;探讨了酸洗的作用;并在乙二醇中,以1% PEG为分散剂,pH=10条件下获得了纳米碳化硅粉体的高稳定分散悬浮液。

ZnO, MgO and SiO_2 powders were covered on top of the alloy as dopants, the effects and principles of the dopants were discussed. Based these, SiC particles were made into preforms with different distribution of air holes by changing the granularity of SiC particles and the content of graphite additive, and the oxidation growth of aluminum alloy melt into the air holes within the preform was controlled to prepare SiC/Al_2O_3/Al composite with inerratic shape. And the SiC particles effect principle to the oxidation of SiC/Al2O3/Al composite was studied.

以ZnO,MgO和SiO_2为引发剂,覆盖在合金表面,讨论了引发剂的添加效果和作用机理;在此基础上将α-SiC颗粒制作成为预制体,通过改变SiC的粒度和石墨造孔剂的含量,调整预制体内部的气孔分布,控制铝合金熔体在预制体孔隙内的氧化生长,制备出形状规则的SiC/Al2O3/Al复合材料,同时研究了SiC颗粒的存在对SiC/Al_2O_3/Al复合材料生长机理的影响。

There are four kinds of fracture ways of 7075/SiC composite under high-temperature compression, which are the evulsions of SiC from the matrix due to forming cavity near the interface and intensive phase , ductile fracture of the matrix due to the nucleation of cavity near the interface , the fracture near SiC particulate coacervate and brittle fracture of the SiC particulate.

喷射沉积7075/SiC复合材料高温压缩时的断裂方式主要有四种,即空洞在增强相与基体界面处形成而出现增强相从基体中拔出的现象、空洞在基体中形核长大而引起基体的延性断裂、颗粒团聚处的断裂和颗粒的脆性断裂。

XRD results showed that the fabricated Si-SiC composites were composed of α-SiC,β- SiC and Si. The polytype of SiC was related to the reaction-heat during the sintering.

XRD结果表明Si-SiC复相陶瓷的主晶相为α-SiC,β-SiC和游离Si,不同晶型SiC的出现与试样烧结过程中Si/C反应的放热过程有关。

XRD results sho wed that the fabricated Si-SiC composites were composed of α-SiC,β- SiC an d Si. The polytype of SiC was related to the reaction-heat during the sintering .

XRD结果表明Si-SiC复相陶瓷的主晶相为α-SiC,β-SiC和游离Si,不同晶型SiC的出现与试样烧结过程中Si/C反应的放热过程有关。

SiC nanowires grew at the surface of liquid ball and formed villiform nano wire-balls. During the cooling stage in some cases, the SiO reacted with the CO in the furnace to form SiO_2 which then deposited on the surface of SiC nanowires, forming the SiC/SiO_2 nanocable with SiC as the core and SiO_2 as the wrapping layer.

由于Ni-Si化合物跟石墨的浸润性较差,在仅比化合物熔点高出小于200℃的温度区域内,Ni-Si化合物熔体不能在石墨板上熔敷而是形成合金熔球,最后在熔球表面上生长出SiC纳米线形成形状独特的SiC纳米线绒球。

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