查询词典 sic

A special process named "silicification followed by carbonization" was adopted to solve the problems such as SiC grains forming on the SiO2 and poor cohesiveness between the SiC and substrate. Furthermore,this method is effective to prevent O atoms diffusing from SiO2 into SiC epilayer.

通过"先硅化再碳化"的工艺方法可以较好地解决SiO2/Si复合衬底上SiC成核困难以及粘附性差的问题，同时还可以有效抑制SiO2中的O原子向SiC生长膜扩散。

SiC/Al composites were prepared with pressureless infiltration method. Using pin on disk tribometer, the influence of volume fraction and particle size of SiC on dry friction and wear properties of the SiC/Al composites were investigated. The wear mechanism of the composites was studied with the analysis of the worn surface by SEM.

采用无压浸渗法制备不同碳化硅粒度和体积分数的SiC/Al复合材料，利用销－盘摩擦磨损试验机考察了碳化硅的粒度和体积分数等对SiC/Al复合材料干摩擦磨损性能的影响，采用扫描电子显微镜观察磨损表面形貌并分析其磨损机理。

Results show that at 500℃ polycarbsilanedecomposed into noncrystallized SiC and free caron and impurities which hinder the densificationof the composite are also found during the above decomposition process, with the increase ofheating temperature, the noncrystallized SiC can be transformed into β-SiC.

一般传统的制备方法是，向C和SIC粉末中添加烧结助剂B，B；，A12O；；AIN等球磨混合，采用粉末冶金热压烧结；尽管采取了一些特殊的工艺手段和添加烧结助剂的方法，但该材料须在高于2000t时烧结且致密化效果较差［'1。

In the interfacial layer near to SiC, elements Pd and Ni preferentially diffused to SiC and resulted in the reaction products of Pd-Si phase, Ni-Si phase and graphite. In the reaction zone further away from the SiC, mainly elements Cr and V in the brazing filler participated in the interface reaction, and formed Cr-C, Cr-Si, Cr5Si3C. In the central part of the joint, the matrix was composed of Pd-Si, Ni-Si and V-Si phases, on which some blocky carbides V2C, Cr23C6 distributed scatteringly.

MPa。微观分析表明，在靠近SiC的界面反应层中，主要是Pd和Ni优先与SiC反应生成相应的Pd-Si相，Ni-Si相和石墨；接头中在离SiC稍远的区域，主要是Cr和V与母材扩散进入钎缝且未与Pd和Ni反应的C和Si发生反应，生成Cr-C， Cr-Si， Cr5Si3C 等相；钎缝中心区的基体由Pd-Si，Ni-Si和V-Si相组成，其上弥散分布着块状碳化物V2C和Cr23C6。

Investigating the influences of processing parameters on the C/Si molar ratio of resulted nanosized SiC powders indicated that there was a direct pyrolytic reaction from DMS to SiC as well as the previous proposed two-step reaction. Under the optimized processing conditions, the silicon carbide powders of homogeneous particle size distribution, spherical shape and stoichiometrical C/Si molar ratio are obtained. The silicon carbide particle consists of β-SiC crystallite arranged randomly.

论文系统研究了工艺条件对产物粉体C／Si摩尔比、粉体颗粒尺寸和组成粉体的SiC微晶尺寸的影响；研究了粉体制备过程中可能发生的化学反应，提出了反应过程中除了分步进行的生成SiC的反应外，同时在高温区还存在一步完成的生成SiC的化学反应的观点；通过调整工艺参数，制备得到了粉体尺寸分布均匀、呈均匀球状、C／Si摩尔比符合化学计量比的颗粒尺寸为40nm的纳米SiC粉体。

The role of single wettable Ni and Si、non-wettable SiC and complex SiC+Ni、SiC+Si coatings in Al/C composites on interface wettability、interface reaction and properties of composites was systematically studied in this paper.

论文系统研究了单一润湿涂层Ni、Si，非润湿涂层SiC和复合涂层SiC+Ni、SiC+Si在Al／C复合材料中对界面润湿、界面反应和性能的作用。

The results show that during laser cladding, SiC of different forms is decompounded partially; with the increasing of the SiC adding content, the quantity of un-melt SiC increases and hardness of cladding layers improves.

结果表明，随着加入量的增加，熔覆层中未熔SiC含量增加，熔覆层硬度也随之提高；对比加入颗粒状和纤维状SiC的熔覆层的显微硬度表明，同含量情况下纤维状SiC的强化效果更显著；造成熔覆层硬度显著提高的原因是未熔SiC，析出相FeSiC的弥散强化和熔入的Si，C元素引起的固溶强化作用。

The new-model double-interpenetrating SiC/390AI composites reinforced by hollow and porous foam ceramic were fabricated by the squeeze casting method, and the effect of the structures of struts of SiC foam reinforcement on the SiC/390AI composites was investigated.

以空心多孔SiC泡沫陶瓷为增强体，用挤压铸造法制备了新型复式连通双连续相SiC/390Al复合材料，研究了泡沫陶瓷骨架筋的结构对复合材料的影响，以及复合材料中的界面对力学性能的影响。

Fracture behavior study showed that, reinforced of SiC or Si〓N〓 nanoparticles, or SiC whiskers is due to cracks deflection, or twist, or diverse, or stop during propagating, and bridging and pulling-out of whiskers, and accompanied by fracture of a few SiC nanoparticles and whiskers.

断裂机理研究表明：裂纹扩展过程中遇到纳米SiC晶粒、纳米Si〓N〓晶粒和SiC晶须时，将发生偏转、扭曲、分叉、终止及晶须的桥接、拔出，并有少量SiC晶粒、Si〓N〓晶粒和SiC晶须断裂。

In comparison with the switches based on other polytypes of SiC, the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.

结果表明，与采用其他结晶类型的碳化硅衬底相比，SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能，可使其最大共射极电流增益达到890，获得最好的光触发特性和较好的I-V特性，饱和压降大约为4V。

We have limited budget let me know if you can do this competitively.

我们有限的预算让我知道如果你能做到这一点竞争力。

We don't know how other critters breathe--lizards, for example.

我们还不知道诸如蜥蜴之类的动物如何呼吸。