查询词典 doped

Al and N with different concentrations are heavily doped in ZnO semiconductor,and the density of states of Al and N doped ZnO is calculated by DFT mothod under the condition of low temperature.

即在低温高掺杂氮和铝原子的条件下，ZnO半导体的电导率不仅与掺杂氮和铝原子浓度有关，而且和进入价带的相对空穴数有关。

In this paper, the factors influencing the luminescence properties and luminescence quantum efficiency of doped ZnS nanoparticles are discussed, and recent developments with preparation and applications of doped ZnS semiconductor nanoparticle materials are reviewed.

本文讨论了影响掺杂ZnS纳米粒子发光性能和量子产率的因素，综述了掺杂ZnS纳米材料制备及其应用的研究进展。

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

This paper reports results of Tin doped fibre pumped by a semiconductor laser diode as an optical source for methane gas detection. The spectral characteristics of the Tm doped fibre pumped by the 788 nm laser diode is studied experimently and the fibre source is used in a correlation spectroscopy measurement system.

报道了以半导体激光器泵浦掺Tm3+光纤为光源的甲烷气体相关光谱检测系统，研究了788 nm波长泵浦下掺Tm光纤光源的一些光谱特性，并在实验上用这种光源及系统对甲烷气体作了测量。

We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism.

我们研究掺杂半导体波导结构对兆赫波电磁场增益之影响，使用电磁模拟针对不同结构做探讨，并分析连续波和脉冲波之电磁场变化，设计具有强场增益之掺杂半导体的矽狭缝和矽狭缝链之结构，并探讨其物理机制。

Hexagonal nano-silicon carbide thin films doped and undoped with phosphorus which possess a characteristic of the ultraviolet photoluminescence have been deposited by helicon wave plasma enhanced chemical vapour deposition technique under the high hydrogen condition in this work. The optical and electric properties of the doped nano-SiC films together with the electric and photovoltage properties of the n-p nc-SiC/Si heterojunction is studied and analyzed.

本工作利用螺旋波等离子体化学气相沉积技术在高氢气条件下制备了具有紫外发光的六角晶型纳米碳化硅，对这种材料进行了不同比例的磷掺杂，并对这种掺杂的纳米碳化硅的光学、电学特性以及nc-SiC/Si异质结的电学特性和光电压特性进行了研究。

Alternate outgrowthprocess is firstly used to form over 1.0μm thickArsenic heavily doped inner polysilicon layer and slightly doped outer polysilicon layer.T-shaped edge field emitters are fabricated with the HHC etchant.

首次采用"交替生长"技术生长内层厚度超过1.0μm重掺杂砷和外层轻掺杂砷的双层多晶硅薄膜，利用氢氟酸、硝酸、冰醋酸腐蚀液对不同掺杂浓度多晶硅选择性腐蚀的特点成功制备T形横向边缘场致发射阴极阵列。

Considerating over-all performance of mag nets, it was concluded that the optimal amount of doped-Ga was 0.5wt%. The other was that the grains size distribution of grains was narrow and grain distributed homogeneously as to microstructure of magnets when the amount of doped-Ga was 1 .Owt%;(3 ) In the magnets, there existed not only Nd2Fei4-xGaxB, but also GaNd concerning the Ga-elment form. The GaNd increased the amount of liquid and had favorable function during sintering, so it made for the increase of magnets density and the form of the second phase is good for improving coercivity.

综合考虑磁体的性能，最终得出添加0.5wt％为最佳的Ga添加量；(2)对于Nd_(15)Fe_(78)B_7+Ga系永磁体，当Ga的添加量为1.0wt％时，得到颗粒粒度分布范围窄，颗粒分布较均匀的显微结构；(3)元素Ga在磁体中不但以Nd_2Fe_(14-x)Ga_xB形式存在，而且以GaNd的形式存在，在烧结的过程中，增加了液相的数量，起助烧结的作用，有利于磁体密度的提高，形成第二相有利于矫顽力的提高。

Ca3Co2O6 and Na-doped are p-type semiconductor, whereas Ni-doped Ca3Co2O6 turns into n-type.

Ca3Co2O6及掺Na都是n型半导体，而Ca3Co2O6掺Ni是p型半导体。

The technology of the invention can effectively control the growth of the GaMnN materials to obtain GaN Mn-doped thin-film materials. According to research, the intrinsic magnetism of the Mn-doped GaN is paramagnetism.

本发明可有效地控制GaMnN材料的生长，获得高质量的Mn掺杂的GaN薄膜材料，研究发现Mn掺杂的GaN的本征磁性为顺磁性。

Panorama Many people are dancing in a large sitting room.

在一个大客厅里，许多人在跳舞。

We fully understand how a microwave oven cooks food, it is first necessary to talk ...

我们充分理解一个微波炉煮的食物，这是首先要谈。。。