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doped相关的网络例句

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ABSTRACT Erbium-doped fiber laser has attracted much more attentions for its greatly potential application. It upbuilds good theory and experimental foundation for the application of erbium-doped fiber lasers in optic communication, optic detection etc. to study control and synchronization of chaotic erbium-doped fiber lasers.

掺铒光纤激光器因其在光通讯等领域具有广阔的应用前景而受到国内外广大科技工作者的重视,掺铒光纤激光器的混沌/超混沌及其控制与同步的研究更为其在光学保密通讯、光学检测等领域的应用奠定了良好的理论和实验基础。

The coated article includes a glass substrate, a coating of an antimony doped tin oxide deposited on and adhering to the glass substrate and a coating of fluorine doped tin oxide deposited on and adhering to the surface of the coating of antimony doped tin oxide.

该涂敷制品包括玻璃底板、沉积和附着于该玻璃底板的锑掺杂的氧化锡涂层和沉积和附着于该锑掺杂的氧化锡涂层表面上的氟掺杂的氧化锡涂层。

In this paper boron-doped diamond single crystals was synthesized at high pressure and high temperature with iron-based catalyst doped with B4C, h-BN and Na2B4O7. The effects of multiple boron sources on diamond were studied according to the characterization of structure and properties of the boron-doped diamond.

本文使用碳化硼、六方氮化硼和硼砂三种硼源材料复合添加的铁基触媒在高温高压下合成含硼金刚石,通过对金刚石结构与性能的表征,探讨多种硼源复合添加对含硼金刚石的影响。

The results reveal that under violet ray radiation, the gas sensitivity properties of CeO2 doped ZnO nanowires gas sensor have been increased 300% and 305% for 100 ppm density with CH4 and CO, the response time of CeO2 doped ZnO nanowires sensor have been cut down 3 s and 4 s respectively; the reversion time of CeO2 doped ZnO nanowires sensor have been cut down 2s and 4s respectively.

结果表明,在紫光激发下,CeO2掺杂ZnO纳米线气敏元件对甲烷和一氧化碳的灵敏度分别提高了300%和305%,对甲烷和一氧化碳的响应时间分别缩短了3s和4s;恢复时间分别缩短了2s和4s。

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发,并且使掺杂范围能够更好的调节,以"中和"原材料中的有害受主杂质,在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方,由结果可知,适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例,可以使高温PTC陶瓷充分的半导化,陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料;在基质材料上外延生长形成变换叠加的垒层和阱层,在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质,得选择超晶格位置掺杂的p型III族氮化物材料,其中,每个生长周期的步骤为:生长带隙较宽的垒层,同时掺入受主杂质;生长施主杂质或受主杂质δ掺杂层;生长非掺的带隙较窄的阱层;生长受主杂质或施主杂质δ掺杂层;在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火,即得目标产物。

It was found that copolymerization of selected acetylenes with different polarity by using palladium acetylide complex catalysts is an effective method for improving solubility of polymers, especially doped polymers, which makes the above mentioned polymers and doped ones a new type of π-conjugated sensing material for preparation of thin film humidity sensor.

研究发现,以新型过渡金属钯-炔配合物为催化剂,通过选择具有不同极性的取代乙炔单体进行共聚,可有效地提高聚合物的溶解性,尤其掺杂聚合物的溶解性,实现可溶酸掺杂,继而开发出上述系列新的π-共轭型聚炔湿敏材料,用以制备薄膜型湿敏元件。

The effects of the type and concentration of alkaline-earth metal ions are systemically investigated on removing OH groups of erbium-doped phosphate glasses, by using fluoresent lifetime of erbium-doped phosphate glasses varying with OH concentration.

以掺铒磷酸盐玻璃中铒离子寿命随OH含量变化为依据,系统研究了碱土金属离子类型和含量对磷酸盐铒玻璃除水性质的影响。

The result shows that the main factors,which affect the technical quality of the cathode assembly preparation,are surface oxidization of emissive layer,impurity pollution,doped concentration nonuniform,less variation of doped concentration gradient,the sticking stress of GaAs and glass,and the main factors,which affect the cathode activation,are the degree of vacuum for activation at lower than 8x10-8Pa,the partial pressure of H2O,CO,CO2 and C in the vacuum residial gas at higher than 10-8 Pa and the improper caesium and oxygen refining.

结果表明,影响台外工艺质量的主要因素是外延材料缺陷多、发射层表面氧化、杂质污染、掺杂浓度不均匀、掺杂浓度陡度变化小及GaAs与玻璃粘接产生的应力大;影响台内工艺质量的主要因素为阴极激活真空度低于8×10-8Pa。真空残气H2O.CO.CO2及C分压大于10-8Pa。阴极激活铯和氧源提纯不彻底。

Crystalline β-BBO thin films were successfully prepared on (001)-oriented Sr 2+-doped α-BBO substrates by using liquid phase epitaxy, pulsed laser deposition and vapor transport equilibration techniques. The films were characterized by X-ray diffraction and X-ray rocking curve. The present results manifest that the β-BBO thin films grown on Sr 2+-doped α-BBO substrates have larger degree of orientation f value and smaller X-ray rocking curve FWHM than the ones grown on other reported substrates.

采用液相外延法、脉冲激光沉积法以及气相传输平衡法在Sr 2+:α-BBO(001)衬底上生长了质量优异的β-BBO 薄膜,对薄膜进行了X射线衍射测试以及双晶摇摆曲线分析,结果表明,采用Sr 2+:α-BBO单晶作为衬底制备的β-BBO薄膜具有高的择优取向度和低的半峰宽值。

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