查询词典 doped

CeO2 doped ZnO nanowires were synthesized by thermal evaporation, then prepared as the heater type gas sensors. Under violet ray radiation (wave length: 370~395 nm), the gas sensitivity of CeO2 doped ZnO nanowires has been measured using static state distribution.

以物理热蒸发法制备的CeO2掺杂ZnO纳米线为气敏基料，制作成旁热式气敏元件，采用紫光（波长（为3702~395nm）激发，用静态配气法对浓度均为1×10^(-2)%的甲烷和一氧化碳进行了气敏性能的测试。

The result show that the N elements curbed the transition from anatase phase to rutile phase , Doped-N was in the structure of the TiO2 as the form of Ti-O-N and formed a new bond energy level;N-doped changed the paramagnetic of the characteristics. The paramagnetic resonance spectrum of TiO2 showed anisotropic and showed hyperfine splitting, The Lande factor of Ti3 + combined with the N is 1.956. UV-Vis absorption spectra showed that the photocatalytic ability of photocatalyst TiO2-xNx to expand to the visible region, the sample (3.84wt %) has the highest photo catalytic activity, the adsorption edge extend to 520nm and degradation is 55.54% under the visible light for 1.5h.

研究结果显示，N元素抑制了锐钛矿相向金红石相的转变，阻止了晶粒的长大，掺杂的N元素以O-Ti-N的形式存在于光催化剂结构中，形成了新的能级结构；N掺杂改变了催化剂的顺磁特征，使TiO2的顺磁共振谱线呈现各向异性，发生了超精细分裂，其中g2=1.956，是与N结合的Ti3+的朗德因子；紫外可见光吸收谱表明，催化剂TiO2-xNx的光响应能力拓展到可见光区，光吸收带发生红移；光催化测试结果显示，掺杂量为3.84的TiO2-xNx在可见光区的响应能力最高，吸收波长延伸至520nm，其光催化活性最大，1.5h降解率达到55.54%。

The absorption spectrum and fluorescence of Ni2+-doped NASL glass and glass ceramics were measured. It shows that the Ni2+-doped NASL glass ceramics has a broad fluorescence spectrum centering at 1185 nm with full width at half maximum of about 300 nm.

测试了Ni2+掺杂NASL玻璃和微晶玻璃的吸收光谱和荧光光谱，发现Ni2+掺杂NASL微晶玻璃有较宽的荧光光谱，荧光中心位于1185 nm，荧光半峰全宽约为300 nm，荧光寿命和受激发射截面的乘积为4.2×10-24 cm2·s。

The results indicate that the cell only doped with Al2O3 (Cell 1) is of the worst output performance at 850 ℃, the output power density being 0. 083 W/cm^2, and that the cell doped with Al2O3 and coated with buffer layer (Cell 2) is of the best output performance at the same temperature, the output power density being 0.120W/cm^2. AC impedance spectroscopy analyses indicate that the interface resistance and Ohmic resistance of Cell 2 are obviously less than those of Cell 1, meaning that insulative nickel aluminum spine1 is generated by the reaction of Al2O3 and NiO during the sintering at a high temperature.

结果表明：850℃时，含Al2O3的电池输出性能最差，输出功率约为0.083 W/平方公分；含Al2O3并具有过渡层的电池输出性能最好，输出功率约为0.120 W/平方公分；交流阻抗谱分析表明，含Al2O3并具有过渡层的电池的欧姆电阻与界面电阻均比不含过渡层的明显减小，说明YSZ中添加的Al2O3在高温烧结过程中，与阳极材料NiO发生反应生成不导电的镍铝尖晶石。

In this article, optical and electronic properties of ZnO doped by Al are studied based on DPT theory. Correlation energy of electron exchange is combined with GGA in the form of PW91. The elements doped by replacement and inside of ZnO are calculated. The lattice and electronic structure properties of these models are calculated and compared with the experiments and previous theoretical works.

采用基于密度泛函理论的总体能量平面波超软赝势法，电子交换关联能结合广义梯度近似PW9l形式，对Al原子不同掺杂位置的ZnO超原胞进行了几何优化，计算分析了晶体结构参数及掺杂模型的电子结构。

In order to improve wave-absorption properties and wave band of single absorbent,a novel absorbing medium of carbon black doped with nanometer-sized manganese dioxide was prepared.

为了改善单一吸收剂对电磁波的吸收性能并有效拓宽吸收频段，采用纳米二氧化锰掺杂炭黑制备了一种新型的复合吸收剂，并对吸收剂的TEM颗粒形貌，介电特性和微波吸收性能进行了研究。

A novel absorbing medium of carbon black doped with nanometer sized manganese dioxide were prepared.

基于单一吸收剂无法达到良好的微波吸收效果，利用纳米二氧化锰掺杂炭黑颗粒制备了一种新型的复合吸收剂，并进行TEM形貌表征，介电性能分析以及微波吸收性能的测试。

The results show that the optimum mole percent of Al3+ to Yb3+ is 9—11 for high concentration of ytterbium-doped silica-based fiber at which low concentration quenching probability, high absorption coefficient and proper numerical aperture can be obtained.

揭示出在高掺Yb3+的石英基光纤中，共掺Al3+的摩尔浓度为Yb3+摩尔浓度的9—11倍时既可以减小Yb3+的浓度猝灭概率，又可以获得高吸收系数，同时还可更好地满足数值孔径的要求的结论。

A novel Er3+-doped tellurite glass with compositions of TeO2-ZnO-Na2O-Bi2O3 was prepared, and the intensity parameters, spontaneous emission probability, absorption and emission cross-section of Er3+ ions were calculated according to the Judd-Ofelt and McCumber theory.

研制了一种新型掺铒碲酸盐玻璃TeO2-ZnO-Na2O-Bi2O3，利用Judd-Ofelt和McCumber理论计算了Er3+离子的强度参数、自发辐射几率、吸收截面和发射截面等光谱参数。

When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

当半导体中加入了施主感受主杂质，我们就说该物质"掺杂"了。

Connectors are lines that can be anchored to particular places, called glue points , on the graphic object.

连接符，可固定在图形对象的特定的地方的线条。

Another way of putting it, too many agents have a say in each other's work, and bureaucratic rigor mortis sets in.

另一种表达是，太多的作用物在彼此的工作里都有话语权，官僚的僵尸开始抬头。