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For 0.75-doped compound,in addition to FM,the rare half-metallic bands have been found for the first time with several kinds of FiM structures.

对LaMn1-xCrxO3，一个有意义的特性是，对x＝0.75化合物，除了在铁磁态发现其有半金属能带，还首次在多种亚铁磁结构中发现有这一特性。

D aggregate amount of the adjustment: The silica-doped general do not have to adjust the amount of gravel.

总额的调整：硅掺杂一般不必调整数额的砾石。

Spectroscopic and upconversion fluorescence properties of Er3+ doped aluminosilicate glass.

磷酸盐钕玻璃的荧光寿命和损耗对激光增益特性的影响。

All of these results can explain the better photocatalytic properties of S-doped anatase TiO2 in visible-light region.

这些结果很好地解释了S掺杂锐钛矿相TiO2在可见光下具有优良的光催化性能的内在原因。

UV curable coating was used as the dispersion system. The effect of PMMA microspheres, PMMA/TiO2 nano-composite particles and dulling agent on the antiglare property, the viscosity, the mechanical property, as well as the chemicals resistance of the film was studied in this paper. The result showed that the film had better comprehensive property when 0.5% PMMA microspheres, 0.5% PMMA/TiO2 nano-composite particles and 0.75% dulling agent were doped.

紫外光固化体系成膜速度快、涂层透明性好、力学性能优良，本文采用此体系固化成膜，考察了PMMA微球、PMMA/TiO2纳米复合粒子和消光剂对薄膜防眩光性能、涂料黏度、涂膜力学性能以及耐化学药品性能的影响，确定了防眩光涂膜材料涂层的粒子配方：0.5%PMMA微球、0.5%PMMA/TiO2纳米复合粒子和0.75%消光剂。

In addition to SnO2 nanoblades, In-doped SnO2 nanoblades were also synthesized on a glass substrate covered with a SnO2 buffer layer in an aqueous solution consisting of (SnCl4E5H2O+ InCl3E4H2O) and (NH2)2CO in presence of NaOH at 900C.

除了SnO2奈米叶片，以(SnCl4.5H2O +InCl3E4H2O)、尿素(NH2)2CO和NaOH为配方，在90°C持温24h，我们也可以在镀有SnO2 缓冲层的玻璃基板合成出大面积的In-doped SnO2奈米叶片。

In 2000, T. Dietl utilized theoretical simulation to be contrasted with the experimental, and he found the manganese doped gallium arsenide were identical, and derive other magnetic characteristics in its relevant semiconductor materials.

在2000年T。 Dietl 等人利用理论的模拟计算和实验的对照，发现在砷化镓参杂锰元素的吻合，并推导其他相关的半导体材料在其磁性方面的特性。

When doping the rare earth elements in nano-TiO〓, the relationships between the photocatalytic activities and the ratio of electronic affinity to ionic radius of doped atomic ion were studied.

在稀土元素对纳米TiO〓光催化剂的掺杂研究中，发现催化活性与掺杂元素的稳定氧化态的电子亲和势与离子半径的比值Ea/r有较好的相关性，而与Ea/r〓的相关性相对较低。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

The optimized device process of p-n Alo.85Gao.15As/GaAs solar cells have been investigated. AuBe/Au and AuGeNi/Au were evaporated and metallized to form ohmic contacts of front grids and back electrodes, respectively. Heavily-doped GaAs cap layers were removed by the NH4OH:H202:H3P04:H20 selective etching solution.

分别采用真空蒸发AuBe/Au和AuGeNi/Au并合金化形成欧姆接触制作太阳电池正面栅线和背面电极；采用NH_4OH：H_2O_2：H_3PO_4：H_2O体系的选择性腐蚀液去除高掺杂的GaAs接触层；采用真空蒸发技术制备ZnS/MgF_2双层复合减反射膜。

We are forbidden from giving money to these shoeless, skinny children, as this will perpetuate begging.

向光着脚，骨瘦如柴的孩子施舍是不可以的，因为要招来无休无止的乞讨。

It would be hard not to fall victim to some sharpeyed policeman.

要想不被某个目光锐利的警察抓到，谈何容易。