分子束

In the second part of the work,quantum interference induced weak-localizationeffects as well aselectron-electroninteraction effects were investigated through magnetotransport measurementsfor highly doped n-ZnSe∶Clat metallic side of metal-insulator transition(MITgrown by MBE,withmagnetic fieldfrom 0 to 1T and temperaturefrom 0.3K to 30K.

第二部分对一系列分子束外延生长的高掺杂n-ZnSe∶Cl(位于金属绝缘体转变的金属一侧)在弱磁场(0到1T)以及低温(0.35K到30K)下进行了磁输运研究，以研究Anderson局域化，由于量子干涉效应引起的弱局域化效应以及无序存在时电子-电子相互作用效应。在所有样品中观察到了负磁阻并获得了其对温度，磁场以及电子浓度的依赖关系。

Various techniques have been used to prepare ZnO films, such as pulsed laser deposition, chemical vapor deposition, molecular beam epitaxy, magnetron sputtering, and metalorganic chemical vapor deposition.

有很多种技术已经用於制作氧化锌薄膜，例如：脉冲雷射沉积法、化学气相沉积法、分子束磊晶法、磁控溅镀法、有机金属气相沉积法等等。

We have epitaxially grown ultrathin Pb and Co films on the Cu(111)surface bymolecular beam exitaxialgrowth technique,and studied in detail the growthand surface alloying of submonolayer Pb on Cu(111),the shift of Pb 5d core levelbinding energy on Cu(111),the surfactant-assisted epitaxial growth of Co on Cu(111)using Pb as a surfactant,and the spin exchange splitting of ultrathin Co films onCu(111)using synchron radiation photoemission spectra as well as Auger electronspectraand low energy electron diffraction.

利用分子束外延生长技术在单晶Cu(111)表面外延生长了超薄Pb和Co膜，并利用同步辐射光电子发射谱，结合俄歇谱和低能电子衍射，详细研究了超薄Pb在Cu(111)表面的生长、表面合金化，Cu(111)表面Pb的5d芯能级位移，以Pb作活性剂时Co膜的活化外延生长，以及超薄Co在Cu(111)表面的自旋交换劈裂，得到了一些有意义的结果。

Based on the project requirements, the research has focused on the confined electronic states in the semiconductor surface quantum wells. The moden quantum theory and advanced material growth technology have been used. The interband transitions in the surface quantum well have been studied by the in-situ photo-modulated reflection spectroscopy combined with the molecular beam epitaxy system. The optical transitions, including the tansition between ground or excited states of the electron and hole states, have been directly observed.

根据项目任务书的要求，本项研究在现代量子理论与先进材料生长技术基础上对半导体表面量子阱阱结构中的受限电子能态进行系统的光谱实验与理论研究，通过与分子束外延设备直接耦合的光调制光谱手段在原子层量级上直接观测到了表面量子阱中本征能态间的光跃迁特性，其中包括基态间的跃迁和激发态间的跃迁。

Based on the above investigation of ideal layer-by-layer growth process, the surface roughening phenomena during the real epitaxial growth are discussed. Some important microscopic dynamic models for molecular-beam epitaxy , which have attracted much attention recently, are studied. Using the master-equation method, the corresponding growth equations are directly derived, and then the scaling behaviors, the universalities, as well as the crossover effects are determined.

在这一理想层状外延生长研究的基础上对实际外延生长过程中十分显著的表面粗化现象进行了探讨，深入研究了几类近年来受到广泛关注的描述分子束外延生长的重要的微观动力学生长模型，采用主方程方法直接得到了相应的非线性生长方程，并确定了标度性质、普适类以及渡越行为。

These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.

这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。

Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.

采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构。

The epitaxy of Fe grown on Pd(100)surface by pulse laser deposition hasbeen studied.

研究了室温下Fe在Pd(001)表面的激光分子束外延及其磁学性质。

Compared with metal organic chemical vapor deposition and magnetron sputtering, laser molecular beam epitaxy is an advanced technology developed in recent years and has stronger and stronger co...

在讨论ZnO薄膜基本特性的基础上，较为详细地论述了激光分子束外延技术及其在氧化锌薄膜制备中的应用和取得的新进展。

Recent years, with the development of modern grown technology in superthin layer material es.

近年来，随着现代超薄层材料生长技术(以分子束外延MBE和金属有机化合物汽相淀积MOCVD等技术为典型代表)和各种超精细加工技术的发展。

He and Nina moved to California and lived at 2005 Ivar Street, Apt.

他和Nina搬到加州，并在2005年伊瓦尔街，公寓生活。

Droperidol （ potently inhibits transfected HERGchannels and this is the probable mechanism for QT prolongation.

氟哌利多有效地抑制了转染的 HERG 钾通道，可能是 QT 间期延长的机制。