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Edge plasma behaviors between limiter and divertor configuration are compared.

分析了在多脉冲超声分子束加料和低杂波注入条件下的边界等离子体特性。

Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.

本文首先详细介绍了分子束外延设备的原理和构造。

Grazing incidence X-ray reflectivity is also recommended as a powerful tool for assessing the structure of superlattices.

另外,还讨论了生长中断在分子束外延生长中的应用。

Later, the molecular beam experiments show that the distribution of these two laws are correct .1872, he is also given the basic equation of kinetic theory of gases - Boltzmann integro-differential equations.

后来的分子束实验证明,这两个分布律都是正确的。1872年,他又给出气体动理论的基本方程——玻耳兹曼积分微分方程。

The in-plane and out-of-plane lattice constant of Ni/GaAs (100) was determined X-ray diffraction.

在170K的生长温度下,通过分子束外延在GaAs(001)表面生长得到体心立方结构金属Ni薄膜。

Naphthol (1HN) clusters have been studied in supersonically cooled molecular beam by using UV laser ionization.

用飞行时间质谱仪和超声速脉冲分子束技术研究了紫外激光对1-萘酚(1HN)团簇的电离质谱。

Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.

中心现有80多台各种微机电工艺设备,如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机,以及多种常用测试仪器,如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。

This dissertation mainly focused on the growth and characterization of GaN based materials grown by radio frequency plasma assisted molecular beam epitaxy.

本文研究了GaN和AlGaN/GaN材料的射频等离子体分子束外延生长及其特性,并对相关器件工艺中的若干重要问题如刻蚀、欧姆接触等,进行了初步探索。在前人工作的基础上,进一步优化了GaN材料的生长工艺,并深入研究了材料生长过程中的一些重要问题。

In recent years, with the development of science and technology, particularly in the field of electronic technology, Si semiconductor increasingly harsh demands, in order to obtain a suitable quality of the materials we need. Molecular beam extention growth technology has received increasing attention .Si and Ge and SiGe heterojunction has wide research because of the wider use of the structure.

近年来,随着科学技术的发展,尤其是电子领域技术的快速更新,我们对Si基半导体的要求越来越苛刻,为了获得高质量的适合我们需要的材料,分子束外延的生长技术越来越受到重视,而Si和Ge因为SiGe异质结结构的广泛应用,一直是实验和理论研究的热点,我们通过分子动力学的模拟来了解这种方法的微观机理是非常有意义的。

The experimental result reveals the dynamic details of the molecular beam moving in the background gas, especially the effects on the background molecules.

实验结果揭示了分子束在背景气体中运动的动力学详细状况,尤其是其对背景分子速度分布的影响。

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