查询词典 transient current

The steady state and transient components of the current injection artifact are nulled with the DC and transient balance controls.

目前注射工件的稳态和瞬态成分就被删除了与 DC 和瞬态平衡控制。

The results of the computation as well as that of the experiments show that though the propagation delay of the transient current in the loop circuit is in the order of several nanoseconds, it must be fully taken into consideration in the transient mode.

计算结果与实际结果均表明，瞬态电流在本文所提出的实验回路中的传输时延虽为纳秒级，但应在瞬态模型中给予充分考虑。

Based on short circuit current amplifier,an current meter for measuring transient current is made up.

该检测仪适合于要求损耗较小和待测回路电阻较小时的瞬变电流检测，可作为物理及电子实验低成本的检测仪器，用于单根导线电磁感应现象等实验。

A new method of obtaining secondary electron yield and secondary Cs〓 ionization probability by detecting target current and primary ion current under Cs〓 bombardment is put forward The dependence of Cs〓 ionization probability on primary ion energy, primary beam current and substrate compositions, as well as the dependence of secondary ion intensity on erosion time during transient period has been studied The mechanisms of secondary ion emission are explained

二、提出了通过测量靶流和一次束流求取Cs〓轰击下二次电子产额和二次Cs〓离化率的方法，实验研究了一次离子能量、束流强度及不同基体对二次Cs〓离化率的影响和瞬态过程中二次离子强度的变化规律，并对发射机理做了解释。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Electromagnetics course mainly including basic phenomena and laws of electro- magnetics, electrostatic field in vacuum, in conductor and in electric medium, electric energy, stabilized current, stabilized magnetic field and its basic laws, electric and magnetic fields caused by a moving chager in lower speed, the transform of electric and magnetic fields between different systems of coordinates, inductive laws, eddy field, self inductance, mutual inductance and transient, molecule current and magnetic substance, ferromagnet, boundary conditions, magnetic circuit theorem, energy of magnetic field and density of magnetic energy, displacement current, Maxwell's equation, electromagnetic wave, Poynting vector.

电磁学课程的主要内容包括：静电的基本现象和基本定律，真空中的静电场，导体和电介质中的静电场，电场的能量与电场能量密度，稳恒电流，稳恒电流磁场的基本定律，运动电荷的电磁场，不同参照系之间电磁场的变换，电磁感应定律，涡旋电场，互感，自感，暂态过程，分子电流与磁介质，铁磁体，边界条件，磁路定理，磁场的能量和磁能密度，位移电流， Maxwell 方程组，电磁波和玻印廷矢量等。

CY2000 stable high-current test system or are only a computer-controlled automatic recording systems, real-time monitoring of input current waveform, but also by setting the trigger conditions×transient input current waveform.

CY2000大电流稳升试验测试系统是国内唯一一款计算机控制的自动记录系统，可实时监测输入电流波形，还可按设定的触发条件扑捉瞬态输入电流波形。

A pure and single K+ current of ultrarapid delayed rectifier K+ current or transient outware K+ current is respectively expressed on Xenopus Oocytes. This is a moderm pharmacological model for evaluation class Ⅲ antiarrhythmiv durgs, overcomes many defcts such as lacking human fresh cardiac muscle cells as material and co-expression of many currents on cell membrane. A new compound A1998 from Ocean material is evaluated in this model for class Ⅲ antiarrhythmic functions.

5和Kv4.2cDNA转录为mRNA，然后将其分别注入蟾蜍卵母细胞上：在蟾蜍卵母细胞上分别获得纯净、单一的超速延迟性整流钾电流(Ikur，ultrarapid delayed rectifier K+current)和瞬间外向钾电流(Ito，transient outward K+current)表达，克服以往在筛选评价抗心律失常药物时，人新鲜心肌细胞取材困难、多种电流在细胞膜表面共同表达等缺点，从而建立评价Ⅲ类抗心律失常药物的先进药理模型，并筛选具有Ⅲ类抗心律失常药理作用的新化合物A1998。

The most common ratio using current asset and current-liability data is the current ratio, which is current assets divided by current liabilities.

利用流动资产和流动负债数据计算的最常见的比率是流动比率，即流动资产除以流动负债。

Backset current area, the important factor of burner performance was discussed on the basis of carrying on numerical simulation to the cement kiln with three-channel burner by the model of. RNG k-ε. The model that backset current area was divided into center backset current area, interior backset current area, and other backset current area was compared in three-dimensional condition.

在采用重整化群κ-ε模型对水泥窑用多通道燃烧器进行数值模拟的基础上，针对影响燃烧器性能的重要指标－回流区进行讨论，将三维条件下燃烧器的流场分布与传统燃烧器流场进行劝比，提出了三维条件下燃烧器回流区分为中心回流区、内回流区、外回流区3个回流区的分布模型，并分析了影响回流区的直流风和旋流风2个重要因素。

If you were not , and OS X just booted normally, have no fear.

如果你没有，和OS X刚刚启动通常，没有恐惧。

I only want to preserve our all .

我只想保存好我们的一切