查询词典 thin layer

However remarkable impacts were observed in the plantation in terms of community physiognomy,community structure,species composition,species richness,and biomass accumulation.1 Planting trees made community structure simple.Betula alnoidis plantation had three layers including a dominant arbor layer,a complex and well developed shrub layer and a poorly developed vine layer.The arbor layer contained few species and had a single layer.The mountain rain forest had 4 layers including the dominant arbor layer,shrub layer,grass layer and vine layer.The vine layer was well developed and very rich in species composition,and the arbor layer contained as many as 38 species that could be grouped into 3 layers.2 Sequenced by the important value,main species for the plantation and the nature forest were totally different,and the plantation had one dominant species while the nature forest contained many dominant species.3 Planting trees changed the community physiognomy.

但是人工种植西南桦林对群落的季相外貌、群落的结构、物种组成、物种丰富度以及生物量等方面有较大的影响。1人工造林使得群落结构简化，西南桦人工林的层次结构有3层，以乔木层占优势，并且有种类多而发达的灌木层，同时，藤本植物欠发达，但是乔木层树种单一，明显仅有一层；山地雨林的层次结构有4层，以乔木层占优势，还有灌木层、草本层和藤本植物，藤本植物种类多，十分发达；乔木层树种丰富，可达38种，乔木层还可分为3层。2人工造林较大程度地改变了群落的物种组成，根据重要值的大小排列，人工林和天然林的主要物种组成已经完全不同；并且人工林单优树种明显，而天然林就含有较多的优势树种。3人工造林改变了群落的外貌。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

So, researching the influence to reflection wave features made by the factors, such as sand and mud thin-bedding seismic reflection feature, the thickness of single layer in the thin-bedding group, the thickness of subroutine structure, the number of layers in the thin-bedding group, type of incident wavelet, main frequency, sampling rated has the moment current significance and theoretical significance in the qualitative or quantitative seeking of single layer's thickness or thin layer group's thickness in the thin-bedding and forecast of the space distribution laws of thin reservoirs.

目前我国东部的石油勘探工作已进入精细勘探阶段，如何确定陆相地层中薄储层的空间展布规律及其性质已成为一个亟待解决的问题，由于我国东部的绝大多数中、新生代陆相含油盆地大都以薄层砂、泥岩沉积为主，夹有少量薄层碳酸盐岩、页岩及膏盐层，地层岩性和厚度横向变化均较大，而且这些地层的厚度远远低于常规地震勘探的垂向分辨率，因此，从理论上研究沙泥岩薄互层地震反射特征、薄互层组内的单层厚度、子结构厚度、互层组内层数、入射子波类型、主频、采样率等各种因素对反射波特征的影响，将对我们定性或定量求取薄互层组中各单层厚度或薄层组的厚度、预测薄储层的空间展布规律有一定的理论和现实意义。

The invention discloses a LCD panel, colorful filter piece and making method, which comprises the following steps: providing a base; forming a buffer material layer on the base; forming patterned lightproof layer on the buffer material layer; adopting patterned lightproof layer as lid to pattern the buffer material layer to form a patterned buffer layer; forming a separating piece through patterned lightproof layer and patterned buffer layer; making the separating piece form multiple pixel areas on the base; forming a colorful filter layer in each pixel area.

本发明公开了一种液晶显示面板、彩色滤光片及其制作方法，其中彩色滤光片的制作方法包括下列步骤：首先，提供一基板，并在基板上形成一缓冲材料层。接着在缓冲材料层上形成一图案化遮光层。以图案化遮光层为罩幕来图案化缓冲材料层而形成一图案化缓冲层，使得该图案化遮光层与图案化缓冲层共同形成一隔离件，且隔离件在基板上形成多个像素区域。然后在每一像素区域内分别形成一彩色滤光层。

It can be seen from the results that: water potential in quartz sand layer decreases with increasing thickness of the quartz sand layer under fixed sprinkling rate and increases with increasing sprinkling rate under fixed thickness of quartz sand layer; some of water above quartz sand layer flows down through the quartz sand layer and some flows down along edges of the quartz sand layer; some of water detoured the quartz sand layer flows into the region below the quartz sand layer closely along lower surface of the quartz sand layer.

实验结果表明：在喷水强度一定情况下，石英砂层中的水势随石英砂层厚度的增加而减小；在石英砂层厚度一定情况下，石英砂层中的水势随喷水强度的增加而增大；石英砂层上方的水部分通过石英砂层向下流动，部分绕过石英砂层向下流动；绕过石英砂层的水部分地紧贴石英砂层下表面向石英砂层下方的黄土中流动。

When we operate all accessing databases in encapsulation at Data Access Layer by ActiveX DLL packages (DAL layer, Namely data access layer),and operate all business logic or transaction processings in encapsulations at Business Logic Layer ( BLL layer, namely business logic layer), ASP dynamic webpages are offered to the interface of user for Presentation Layer ( PL layer, Namely present layer).

使用ActiveX DLL组件将对数据库的存取操作全部封装在Data Access Layer层（简称DAL层，即数据存取层），将商业逻辑或事务处理全部封装在Business Logic Layer层（简称BLL层，即商业逻辑层），提供给使用者的界面就是Presentation Layer层的ASP动态网页。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

Fostering the concept of multi-culture firmly and mastering the development of advanced culture correctly are conductive to resisting terrorism, separatism of nationalities and ultraism of religion, which is of great academic theoretical, immediate and profound historical si...

牢固树立多元文化的理念和正确把握先进文化的发展方向，有助于在世界范围内自觉地抵制恐怖主义，民族分裂主义和宗教极端主义。不仅具有重大的学术理论意义，而且也具有重大的现实意义和深远的历史意义。

But if anyone walks in the night, he stumbles, because the light is not in him.

11：10 若在黑夜行走，就必碰跌，因为那光不在他里面。