英语人>网络例句>semiconductor diode 相关的网络例句
semiconductor diode相关的网络例句

查询词典 semiconductor diode

与 semiconductor diode 相关的网络例句 [注:此内容来源于网络,仅供参考]

Provided is a wafer level CSP semiconductor device with the same size as a semiconductor substrate, in which the orientation of a semiconductor device cut into individual pieces and product information can be identified by a mark, indicating the orientation and the product information formable, irrespective of the size, shape and the number of terminals of the device without increasing the number of manufacturing processes, and its manufacturing method.

本发明提供一种在与半导体衬底尺寸相同的晶片级CSP半导体器件领域中,能够利用表示半导体器件的方向及产品信息的标记,来识别被切成单个的半导体器件的方向及产品信息的半导体器件及其制造方法,其中,该标记能够在与半导体器件尺寸、形状及端子数目无关,且在不增加制造工序数目的情况下形成。

A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.

提供一种在确保高耐压元件的高耐压特性的同时使高耐压元件和低耐压元件具有良好特性的半导体装置。具有高耐压元件和低耐压元件的半导体装置包含:规定了形成高耐压元件的高耐压元件区和形成低耐压元件的低耐压元件区的半导体衬底;在该高耐压元件区设置的第一LOCOS隔离结构;以及在该低耐压元件区设置的第二LOCOS隔离结构。第一LOCOS隔离结构由在该半导体衬底的表面上形成的LOCOS氧化膜和其上形成的CVD氧化膜构成,第二LOCOS隔离结构由LOCOS氧化膜构成。

The invention discloses an optical-fiber all-optical code converter, comprising a temperature control circuit as well as optical-fiber Mach-Zed interferometer, heat sink, semiconductor refrigerator, thermosensitive resistor and radiator, where the interferometer is composed of two cascaded 3dB couplers on the heat sink, the relation between length difference delta L of two arms of the interferometer and generated delay time difference delta T is that delta L=c.delta T/n, where c is light velocity in vacuum and n is refractive index of optical fiber; the thermosensitive resistor is used to detect temperature of interferometer, the temperature control circuit is used to compare feedback voltage of the thermosenstive resistor with a given voltage to regulate working current of the semiconductor refrigerator, and the semiconductor refrigerator refrigerates or heat two arms of the interferometer by the heat sink.

本发明公开了一种光纤型全光码型转换器,它包括温控电路和位于密封盒内的光纤型马赫-泽德干涉仪、导热热沉、半导体制冷器、热敏电阻以及散热片;干涉仪由位于导热热沉上的二个3dB耦合器级联而成,两臂的长度差ΔL与产生的延时差ΔT之间的关系为ΔL=c。ΔT/n,c为真空中光速,n为光纤折射率;热敏电阻用于对干涉仪的温度进行探测,温控电路用于比较热敏电阻反馈的探测电压和设定电压,对半导体制冷器的工作电流进行调节,半导体制冷器通过导热热沉对干涉仪两臂同时进行制冷或加热。

An external-cavity semiconductor laser was built by using a semiconductor laser, collimating cylindrical column lens for fast axis beam and a volume Bragg grating as a feedback element to get semiconductor lasers wavelength locked to the Bragg wavelength of the VBG.

用体布拉格光栅作为反馈元件与瓦级半导体激光器以及快轴准直柱透镜构成一个可以将半导体激光器的工作波长稳定在体布拉格光栅布拉格波长处的外腔激光器。

Semiconductor Product category Ultrasonic welding has: Ultrasonic Wire Welder Series, ultrasonic gold wire bonder series, enameled wire electric spot welder series; semiconductor back-up processes Product categories: LED computer tester, dot-matrix plate detector, the expansion of machine, paste membrane and dispensing, such as semiconductor production equipment.

超声波半导体焊接产品类有:超声波铝丝焊机系列、超声波金丝球焊机系列、漆包线电点焊机系列;半导体后备工序产品类:LED电脑检测仪、点阵板检测仪、扩张机、贴膜机和点胶机等半导体生产设备。

To present a manufacturing method of semiconductor device using adhesive sheet for wafer processing or adhesive sheet with semiconductor wafer, and a semiconductor device obtained in this manufacturing method.

进而本发明还提供使用了晶圆加工用粘合片或带半导体晶圆的粘合片的半导体元件的制造方法、以及通过该制造方法得到的半导体元件。

General use rectifier diode bridge, diode at both ends have to have a forward voltage to work properly.

整流一般用二极管桥,二极管两端必须有一定的正向电压才能正常工作。

The large effective screen area is formed by cylindrical mirror and fixed laser diode and large area photo-diode respectively on the two conjugate points.

采用圆弧柱面反射镜及置于其两共轭点上的半导体激光二极管和大面积光敏器件形成大面积有效光幕区。

It uses a macro laser sensor based on optical-electronic triangulation method to get diametric size, and uses grating linear transducer and scanning sensor composed of laser diode and photo-diode to get axial size of the work-piece to be measured.

它利用基于光学三角法的激光位移传感器获得轴类零件的径向尺寸,利用半导体激光器与光电二极管组成的扫描式发讯传感器和光栅传感器的组合获得轴向尺寸。

Stabilized wavelength of a diode laser on 3-4 transition of I ---I , the diode laser was used to probe SSG distribution of COIL by 1D scanning stage or 2D rotating mirror.

一维扫描平台沿气流方向测得的结果显示,增益在气流方向变化平缓,增益区较长。

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