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semiconductor diode相关的网络例句

查询词典 semiconductor diode

与 semiconductor diode 相关的网络例句 [注:此内容来源于网络,仅供参考]

Tunnel diode——a semiconductor diode, discovered in 1957 by L.

隧道二极管-一种半导体二极管,是由L。

A semiconductor device includes a Zener diode connected between an outside terminal and ground, and a resistor connected to the Zener diode in series.

一种半导体器件包括齐纳二极管和电阻,其中,该齐纳二极管连接在外部端子和地之间,该电阻与该齐纳二极管串联。

In Two-Transistor Flyback Converter circuit, a power semiconductor device in Flyback Converting circuit has been replaced by two power semiconductor devices which parallel connected with an ultra-fast diode with soft recovery characteristics. Two-Transistor Flyback Converter can reduce greatly the switching stress of the power switch and does not need to degausser, suitable for high input voltage Switching Power Supply.

反激变换是从Buck-Boost变换演变而来的,将反激变换电路中的单个功率开关管用两个替代,并在每个功率开关管上并联一十箝啦的快恢复二极管而形成的双晶体管反激变换电路,能大大降低功率开关管承受的开关应力,且不需要消磁电路,非常适用于高输入电压的开关电源。

SBD is the use of metal and semiconductor contact with the formation of metal - semiconductor barrier made of, so it is a thermal emission diode, with the manufacturing process of continuous improvement and the emergence of special materials, Schottky barrier gate and high-speed FET Large-scale integrated circuit and ultra-large-scale integrated circuits wide field of applications, Schottky diodes on the application of more and more widely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的,因此,它是一种热电子发射二极管,随着制造工艺的不断完善及特殊材料的出现,肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用,肖特基二极管的应用范围也越来越广。

SBD is theuse of metal and semiconductor contact with the formation of metal- semiconductor barrier made of, so it is a thermal emission diode,with the manufacturing process of continuous improvement and theemergence of special materials, Schottky barrier gate andhigh-speed FET Large-scale integrated circuit andultra-large-scale integrated circuits wide field ofapplications, Schottky diodes on the application of more and morewidely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的,因此,它是一种热电子发射二极管,随着制造工艺的不断完善及特殊材料的出现,肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用,肖特基二极管的应用范围也越来越广。

The theory model and main technological parameters for semiconductor of ceramic material is studied, the semiconductor technology of oxygen defect through weak reduction is proposed, the BaTiO〓 semiconductor sample is prepared by means of doping and oxygen defect, the relation between the conductivity and color is inspected, a simple way to detect the semiconducting character of the sample is proposed.

探讨了陶瓷材料半导化理论模型及主要工艺参数,提出了弱还原氧缺陷半导化工艺模型,并分别用电价掺杂半导化和弱还原氧缺陷半导化两种工艺制备了BaTiO〓半导化样品,考察了样品颜色与电导的关系,提出了一种简易判断粉体样品半导化的方法。

We review the recent progress in the research on spin-orbit coupling and intrinsic spin Hall effect in semiconductor microstructures, including a detailed discussion of the physical origin of spin-orbit coupling in semiconductor microstructures and the intrinsic spin Hall effect in narrow-gap semiconductor quantum wells.

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。

Semiconductor chip is composed of two parts, part of the P-type semiconductor, it inside the hole-dominated, the other side is the N-type semiconductor, here is mainly electronic.

半导体晶片由两部分组成,一部分是P型半导体,在它里面空穴占主导地位,另一端是N型半导体,在这边主要是电子。

A semiconductor chip consists of two parts, one is called P-type semiconductor where holes dominate the region, and the other part is N-type semiconductor where is dominate by electrons.

半导体晶片由两部分组成,一部分是P型半导体,在它里面空穴占主导地位,另一端是N型半导体,在这边主要是电子。

The C2 selectivity over p-type semiconductor membranes is higher than that over n-type semiconductor membranes and the order of C2 selectivity is consistent with that over p-type semiconductor membranes.

但p型半导体膜上的C2烃选择性比n型半导体膜上的要高;p型半导体膜上C2烃选择性与其电导率大小顺序相一致。

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