查询词典 junction transistor

Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.

热谱分析方法成功解决了上述难题，将对半导体器件可靠性分析产生重大影响，具有重要意义和重大的经济实用价值。

The results are indicated that only the strength of gap junction is large enough, can the abnormal oscillation propagate to synchronize the other neurons around and the process is chaotic and complex;the nonlinear and complexity of the oscillations with strong strength of gap junction are larger than that of oscillation with weak strength of gap junction.

结果表明：只有电突触耦合达到一定强度时，异常振荡才能传导并引起神经元的同步振荡；传导活动是混沌和复杂的；在突触耦合强度较强时的神经元活动的非线性和复杂性要强于其在突触强度较弱时的。

Three results are received:(1) The population of neurons can synchronize when the strength of gap junction is large enough and the process is chaotic and complex;(2) The nonlinear and complexity of the seriously disorder oscillation are larger than that of slightly disorder oscillation in a 2-D network;(3) The nonlinear and complexity of the oscillations with strong strength of gap junction are larger than that of that with weak strength of gap junction.

结果表明：电突触达到一定强度时神经元群才能同步振荡，这种活动是混沌和复杂的；同一网络中异常节律较严重的神经元活动的非线性和复杂性要强于异常节律较轻微的神经元；突触耦合强度较强时的神经元活动的非线性和复杂性要强于其在突触耦合强度较弱时的。

In recent years, the company focus on developing solar junction box and connectors products, current products ranging from 5W to 500W and so a full range of sections of the junction box, and developed specifically for second-generation thin-film modules using junction box, our products are by TUV certified and meet the RoHS directive, and apply to a variety of backplane, and TPT, TPE, PYE and glass and so on back to match.

近年来，公司重点开发太阳能接线盒和连接器产品，目前产品已涵盖从5W到500W等全系列的各款接线盒，并开发出专供第二代薄膜组件使用的接线盒，公司产品已通过TUV认证并符合RoHS指令，且适用于多种背板，与TPT、TPE、PYE以及玻璃等多种背板相匹配。

Each bypassing circuit is connected in parallel with a junction formed by the input and second terminals of an associated one of the transistors to limit a voltage across the junction when the junction is reverse biased.

每个旁路电路与由相关的一个晶体管的输入端和第二端子形成的结并联连接，以便当该结被反向偏置时限制该结上的电压。

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟，优化了CI-LIGBT的阳极区结构，指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键，而n〓阳极区结深相对p〓阳极区结深越大，器件的限流能力越强；分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响，得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优，其导通压降仅比普通LIGBT高0.6V；分析了温度对LIGBT闩锁性能的影响，表明CI-LIGBT即使在450K的高温下也不会闩锁，尤其适用于高温工作环境。

Based on many previous studies of the Buqin Mountain, A′nyêmaqên and Kuhai-Sêrtang ophiolitic mêlange zones in the junction between the two orogenic belts and through further survey and isotope chronological study, the authors find that the three ophiolitic mélange zones are not independent but form a typical triple junction with respect to the composition, textures and structures, geometry and isotope chronology, i.e. the Qinling-Kunlun triple junction.

本文在前人对发育于两造山带衔接区的布青山、阿尼玛卿以及苦海—赛什塘3条蛇绿构造混杂带大量研究的基础上，通过进一步的调查以及同位素年代学研究发现，这3条蛇绿构造混杂带并非相互独立存在，它们在物质组成、结构构造、几何形态、同位素年代学特征上构成较为典型的三向联结构造，即秦—昆三向联结构造。

The company was founded in 2000 dedicated to various brands of electronic components distribution, Main: ALTERA, Sanyo, Roma, Toshiba, Samsung, Philips, Pu-cheng, KEC, JRC, NEC, ST, OKI , Hetai, Motorola, RATO, AUK various brands of the world, such as in-line, SMD: IC, II, transistor, varactor, sound of tubes, field effect transistor, single bi-directional Thyristor and various photoemission tube to receive first-class components, widely used in car audio, car amplifier, car / home DVD, VCD, CD, MP3, Tuner tuner, LCD displays, and other fields.

本公司成立于二零零零年，致力于经销各种品牌电子元器件，主营：ALTERA ，三洋、罗姆、东芝、三星、飞利浦、普诚、KEC、JRC、NEC、ST、OKI，合泰，摩托罗拉，RATO，AUK等世界品牌的各种直插、贴片：IC、二、三极管、变容管、音响对管、场效应管、单双向可控硅及各种光电发射管、接收头等元器件，广泛应用于汽车音响、汽车功放、车载/家用DVD、VCD、CD、MP3、高频头调谐器、液晶显示器等领域。

METHODS: On the basis of PMT passive voltage biasing circuit, Bipolar Transistor or Field Effect Transistor were used. Additionally,"adjustable constant current technology" was adopted to avoid the effect of temperature on circuit.

在电阻型光电路倍增管偏置电的基础上，增加双极型晶体管或场效应晶体管构成有源光电倍增管偏置电路；并采用可调恒流技术，以解决温度对电路的影响。

The principle is using thefast breakover of avalanche transistor drive the electron tube. The full time of 4200Vvoltage is about 20ns. The circuit can normally work under 100kHz frequencies.Design an extra fast Q-switch circuit by series arrangement of avalanche transistor.

本论文主要做了以下几方面工作：1、推导了重复率激光基本参数(脉冲能量、脉冲宽度和峰值功率)与周期的关系，并且分析了重复率激光系统运转的稳定性。2、设计了雪崩管-电子管退压电路，由雪崩管驱动电子管开关，4200V高压退压沿20ns左右，能够在100kHz频率下工作。

Aquatic or marsh-growing fern allies; known to have existed since the Cenozoic; sometimes included in Lycopodiales.

生活于水中或湿地的蕨类；从新生代生存至今；有时归于石松目之中。

The engine was uprated from a 90hp Franklin to a 125hp Lycoming.

改良过的引擎是从90hp到125hp莱康明富兰克林。