查询词典 junction transistor

Analyzing the various problems of current steady-state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results.

在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上，认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制，是导致试验结果不准确的重要原因。

The change of electrical performances of 1 MeV electron irradiated silicon-germanium heterojunction bipolar transistor and Si bipolar junction transistor was studied.

研究了 1 MeV 不同剂量电子辐照前后 SiGe 异质结晶体管的直流特性，并与 Si 双极晶体管进行了比较。

Simultaneously the model of bipolar junction transistor and CMOS transistor and the basic circuit units such as current mirrors are briefly introduced; with the topology and model circuit ,the principle and feature of the CC are analyzed. The applications of the CC in the fields of the active network and signal process are synthesized.

首先介绍了模拟集成电路在当代社会中的重要性和集成电路研究的必要性，并简要地介绍了双极型晶体管和CMOS晶体管的模型结构以及几种电流镜电路的原理及性能；从电流传送器的拓扑结构入手，在给出其模型电路的基础上，介绍了电流传送器的工作原理。

Modern voltage references are constructed using the energy-band-gap voltage of integrated TRANSISTOR s, buried zener diodes, and junction field-effect TRANSISTOR s.

现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极管和结场效应晶体管。

All, but emphasis on MOS Field-Effect Transistor and Bipolar Junction Transistor

Final Exam 范围包含所有课程，但着重在金氧半导场效电晶体及载子接面电晶体

The common-anode junction of all the twelve LEDs is connected to the collector of pnp transistor T2 and the emitter of transistor T2 is directly connected to the positive terminal of 6V battery.

在所有12个LED的共阳极交界处，是连接到T2的集电极PNP晶体管的发射极和T2晶体管是直接连接到6V的电池正极。

Often divided into two types:(1) sine wave oscillator, according to the network oscillation frequency of the different loop selected further divided into RC sinusoidal oscillator, LC sinusoidal oscillators, quartz crystal oscillators, voltage-controlled oscillator, voltage-controlled crystal oscillator and other forms;(2) non-sinusoidal oscillation device, also known as relaxation oscillator, is the use of capacitor charging and discharging and active device (transistor, FET, single-junction transistor, etc.) to generate the pulse-off square wave, rectangular wave, triangle wave, sawtooth wave, or these basic waveforms synthetic waveform and its frequency by the LC time constant charge and discharge circuits to decide.

常分两大类型：（1）正弦波振荡器，根据振荡环路中选频网络的不同，又分为RC正弦波振荡器、LC正弦波振荡器、石英晶体振荡器、压控振荡器、压控石英晶体振荡器等多种形式；（2）非正弦波振荡器，又称张弛振荡器，是利用电容充放电及有源器件（晶体管、场效应管、单结晶体管等）的通断来产生脉冲方波、矩形波、三角波、锯齿波或这些基本波形的合成波形，其工作频率由LC充放电电路的时间常数来决定。

You can almost always determine the leads of a bipolar transistor with an ohm meter. b-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

你几乎总是可以用欧姆表来判断双极性晶体管的脚位。b-e结和b-c结将像二级管那样测量，而且正向偏置时，b-c结的读数稍微比b-e结低一点。

In order to get the optimal noisy matching,analyzed and compared inside resistance and noise characteristics of bipolar junction transistor、integrated operation amplifier and junction field-effect transistorand the characteristics of three coupled modes.

为了达到最佳噪声匹配，分析比较了双极型晶体管、集成运放及场效应管的内阻、噪声特性及三种不同耦合方式的特点，从而总结出对于低内阻信号源较理想的前置放大器的有源器件是单级或多级并联双极型晶体管。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Don't listen to their haver, nothing of that sort.

别听他们胡说八道，根本就没那回事。

But bank's shares trade below their book value, suggesting that investors are skeptical.

但是，银行股票以低于账面价值的价格交易，这一点反应了投资者的怀疑。