查询词典 junction transistor

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

To better match the characteristics of the two PN junctions (the diode junction and the transistor base-emitter junction), a transistor may be used in place of a regular diode, like this

为了更好地匹配两个PN结地特性（二极管PN结和晶体管发射结），可以用晶体管代替二极管，如图。

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变，如电流增益、截止频率、基极电阻和基极-发射极电容等，模拟结果和解析模型分析的结果一致，并与常温的结果作了对比分析。

And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.

除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。

Remember that the base-emitter junction of a BJT is nothing more than a PN junction, just like a diode, and that the "diode equation" specifies how much current will go through a PN junction given forward voltage drop and junction temperature

其实，BJT的发射结不过是个PN结，就如同二极管。因此流过PN结的电流与其正向压降的关系也符合"二极管方程"

Damsite selection of Yilan Navigation Hydro- junction on Songhuajiang River;2. Study on the general layout scheme for reinforcement and extension project of Guoyang junction sluice;3. The river reach of Dadingzishan Navigation-power junction engineering is characterized by wide grade II terrace,large distance between the two dikes,thick covering of river bed,and strong movability and permeability of riverbed,and the overall layout is the essence of construction of low-head navigation-power junction on the reach.

松花江大顶子山航电枢纽工程河段具有Ⅱ级台地宽、两岸堤距大、河床覆盖层厚、河床质可动性及渗透性强等特点，该河段兴建低水头航电枢纽工程其总体布置是关键，利用正态物理模型(11∶00)及遥控自航船模等研究手段，对大顶子山航电枢纽工程预可、工可、初步设计及施工图设计等阶段枢纽总体布置进行了多方案比选，提出枢纽主要建筑物布置：自右岸依次为船闸、10孔泄水闸、电站、28孔泄水闸及土坝。

This text analyzes the concept of the environment geology, settle the geology data by survey and the history data of junction area of Hydroelectric Power Station. elaborate the basic geology characteristic of dam area especially junction area, analyze the problem of geology environment in junction area concluding protogenic geological environment and protogenic geological environment. analyze the Physical geology phenomenon such as collapse and mudflow...etc. predict the probability evoked by earthquake in junction area.

本文通过对环境地质概念的辨析，对泸定水电站枢纽区踏勘所得的地质资料和历史资料进行了整理分析，阐述了泸定水电站库坝区特别是枢纽区的基本地质特征，着重分析了枢纽区的环境地质问题，包括原生地质环境及次生地质环境，对枢纽区的物理地质现象如滑坡、泥石流等做了简单的论述分析，并简单预测了枢纽区可能诱发地震的概率。

The invention relates to an amplifier circuit containing a high-frequency transistor (1) and having a circuit (2) for adjusting the operating point, which provides a base current for the high-frequency transistor (1) according to the voltage released at a resistor (3) which is connected in the collector ring of the high-frequency transistor (1). The circuit (2) has a differentiating unit (20), fed by the supply voltage, which compares the voltage released at the resistor (3) with a reference voltage.

带有高频晶体管(1)的放大器电路具有一个用于工作点调整的电路(2)，其依赖于在连接在高频晶体管(1)的集电极电路中的电阻(3)上下降的电压为高频晶体管(1)提供基极电流，电路(2)具有一个由供电电压馈电的差分节(20)，其把在电阻(3)上下降的电压与基准电压比较。

An analog control, in accordance with corresponding changes in the load modulation transistor gate of the base or bias, to achieve the output transistor switching power supply or transistor turn-on time of change in this way can the power supply output voltage in the workplace Conditions of constant change.

一种模拟控制方式，根据相应载荷的变化来调制晶体管栅极或基极的偏置，来实现开关稳压电源输出晶体管或晶体管导通时间的改变，这种方式能使电源的输出电压在工作条件变化时保持恒定。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

If this is not specified, then it is defaulted to 25

如果这是没有指定，则默认为25

Cott invited his mother over for dinner.

COTT邀请母亲来他的房子晚餐。