绝缘层

With the continuous improvement of integration, the thickness of IC insulating layer is more and more thin.

随着集成度的不断提高，集成电路的绝缘层越来越薄。

By analyzing we find that Keeler's conductivity data were overestimated due to the shunting effect.

分析后认为，主要是因为在Keeler的样品组装中使用的环氧树脂绝缘层在高压下导电所产生的分流效应引起的。

The read gap, which is the distance between the first and second magnetic shields is thus reduced as compared to the prior art by the thickness of the electrical leads and the thickness of the prior art second insulation layer formed between the electrical leads and the second magnetic shield.

因此，与现有技术相比减小了作为第一和第二磁屏蔽件之间的距离的读取间隙，减小的幅度为电引线的厚度和形成于所述电引线和第二磁屏蔽件之间的现有技术第二绝缘层的厚度。

Disclosed is a clamping device for connecting a conductor without stripping the insulation. Said clamping device comprises a housing (14) and an actuating part (22) which is movably mounted therein and is provided with a duct (26) accommodating the conductor (50) that is to be clamped.

本发明涉及一种用于电导体(50)的未剥除绝缘层的接头的夹具，包括一个壳体(14)和一个在一个容纳位置和一个接触位置之间可运动地支承的操作件(22)，该操作件具有一个容纳待夹紧的导体(50)的通道(26)。

However, up to now, the MR effect of MTJ with Fe3O4 as an electrode has been found to be negligibly small.

可能是带有自旋的电子在穿隧过程当中在接面处发生了自旋翻转，以及MTJ系统中间的氧化绝缘层和Fe3O4之间在接面处的作用，降低了Fe3O4本身的自旋极化率。

In order to overcome this problem, the traditional triode structure adding a nitride insulting layer was introduced.

因此我们在传统的三极结构中加入了一个氮化矽绝缘层来克服这个问题。

There is a dielectric film between the two parallel-plate of the tunable capacitor. The dielectric film severs to prevent contact between them.

这种结构包括两层可动金属板，下层金属板上覆盖一层薄的绝缘层，防止两层金属膜发生接触粘连。

The fluorine atoms can passivate the Si/SiO2 interface states and grain boundary trap states in the poly-Si.

这是因为氟原子能修补复晶矽与绝缘层介面处及位於通道中复晶矽晶格边界的缺陷。

For instance the semiconductor that make needs to join miscellaneous craft, control specific amount with respect to need, and cannot as same before, allow to have free combination by foreign matter, this will increase the difficulty that IC creates greatly; The insulation layer of semiconductor also the character because of photoetching chemical itself, uneven degree will affect IC directly whether move normally, point out as Dr. Chen Zijiang of IBM academician, when the secondary floor width between circuit the likelihood is 320 dust, and among them indentation is likely 80 dust, that is meant, be in the place of a few extremes, secondary floor width has 160 only dust... to moment, can be current data still used?

比如建造半导体需要参杂的工艺，就需要节制具体的数目，而不克不迭如同以前一样，任由杂质进行自由组合，这将大大增添IC制造的难度；半导体的绝缘层也将因为光刻化学药品本身的特征，凹凸不服的程度将间接影响IC能否正常运行，身为IBM院士的陈自强博士指出，当电路之间的隔层宽度可能为320埃，而其中的凹坑就有可能为80埃，那就象征着，在一些极端的处所，隔层宽度只有160埃……到时辰，今朝的材料还能用么？

These electrons cannot pass into the phototube because of the insulation on the metal plate.

由于金属板上的绝缘层，这些电子并不能进入电光管。

I'm strongly against the death penalty — it's an eye for an eye.

我不赞成死刑——这是以牙还牙的报复行为。

And to get you the support you need, we're enlisting all elements of our national power: our diplomacy and development, our economic might and our moral suasion, so that you and the rest of our military do not bear the burden of our security alone.

并给你们所须的支援，我们正徵召国家所有各种的力量：我们的外交及发展，我们的经济力量与道德劝说，所以你们与其他军人不须要孤独地负起国家安全的责任。