电阻温度系数

The results indicate that the bottom surfacetemperature increases as current density, thermal conductivity, specific electric resistance and steelmaking temperatureincrease, and decreases as the bottom thickness and the heat change coefficient on boundary between shell and air increase.

揭示出底表面温度随电流密度、材料热导率、电阻率及炼钢温度增加而增加，随传热系数和底厚度增加而降低的关系。

Using a single pulse solar cell tester with constant light intensity for 5ms, we have studied the performance of conventional crystalline silicon solar cell with low concentrator( 1～10 sun)and cells temperature of 15～110℃at laboratory.

结果表明，室温下常规太阳电池的最佳工作点电压V_m和光功率放大系数a随入射光强增加呈现先增后降的趋势，并且串联电阻小的电池下降速度慢，串联电阻大的电池下降速度快；温度对晶体硅太阳电池的工作电压和输出功率相当敏感；在严格控制太阳电池工作温度的条件下，串联电阻小的电池在较宽的聚光范围内可以获得良好的使用效果。

Heat treatment is generally performed by heating to a temperature below 482/538°C (900/1000°F) to obtain a zero temperature coefficient of resistance.

通常的热处理是加热到482/538°C (900/1000°F)以下以得到温度电阻系数为零的指标。

It is found that CO2 laser irradiation results in a drsmiatic decrease in the resistivity and remarkable increases in the insulator-metal transition temperature T(subscript P and the temperature coefficient of resistance TCR.

与传统的高温退火类似，经CO2激光辐照后，样品的电阻率从1.3mΩ？cm下降到0.5mΩ？cm，绝缘态－金属转变温度和温度电阻系数分别从255K和7.9%？

XRD results indicate that the major diffraction peaks of the film match those of Sb2Te3. The film growth is apparently at the ［101］/［012］ orientation and many Te peaks are observed. Hall measurement reveals that all the samples are p-type and the resistivities are low. The electric conductivity of the films approaches that of the bulk metal and the carrier concentration is of 1023 cm-3. Seebeck coefficient measurement shows that the samples have nice thermoelectrical properties and the seebeck coefficients are in the range of 7.8—62 μV/K. Among all, the samples annealed at 200 ℃ for 6 h have the highest seebeck coefficient of about 62 μV/K and the lowest resistivity.

XRD测量结果显示，薄膜的主要衍射峰与Sb2Te3标准衍射峰相同，在［101］/［012］晶向取向明显，存在较多的Te杂质峰；霍尔系数测试结果表明，薄膜为p型半导体薄膜，薄膜电阻率较低，其电导率接近于金属电导率，载流子浓度量级为1023 cm-3，具有良好的电学性能；Seebeck系数测量结果显示，薄膜具有良好的热电性能，在不同条件下制备的薄膜的Seebeck系数在7.8—62 μV/K范围；在所制备的薄膜中，退火时间为6 h、退火温度为200 ℃的薄膜其Seebeck系数达到最大，约为62 μV/K，且电阻率最小。

The control system includes the 8031 single chip microprocessor and Circuits of restituting position,circuits of exportation and importation, Circuits of translation code, transmission and induction system of temperature, the interface of coefficient, circuits of showing, stashing equipment and circuits of interface. The temperature is the controlled variable and a closed loop system is constructed.

该系统由8031单片机及其复位电路，晶振电路，总线收发电路，译码电路，温度传感器与系数接口，显示电路，存储器及接口电路组成控制器，以温度为被控制量的闭环控制系统，适用于大功率的电阻锅炉。

At this time the elements should all have approximately the same resistance values and surface temperatures and therefore remain in balance.

此时所有的电阻都有一个相同的阻力系数和表面温度，因此可以最终保持平衡。

The experiment shows that:(1) In certain light intensity and electric field ranges (145～305V/cm) the material Si∶ with a resistivity of 1E4Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature;(2) At a certain electric field,the waveform of the current oscillation is stable and does not change with time;(3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f=f0(L/L0)α where L0 is the minimum light-intensity needed to stimulate oscillation,f0 is the frequency under L0,L is the intensity of the light,and α is a coefficient that increase with electric field;(4) The modulating coefficient K K=(Imax-Imin/Imax decreases as the light increases;(5) The maximum value of the oscillation Imax decreases with the increase of the light-intensity while the minimum value of oscillation Imin increases slowly.

结果表明：在一定光照和电场范围内（276～305V/cm ，电阻率为10.4Ω·cm的材料在液氮温度下显示出电流振荡特性；在一定的电场下，电流振荡波形是固定的，不随时间变化；振荡频率随光照强度的增大而线性增大；调制系数随着光强的增强而减弱；振荡的最大值随着光照强度增大而减小，最小值随着光强增大而缓慢增大。

The results show that the optimized performances of the Au/CdZnTe contacts after thermal treatment in air at a range of 353-373 K can be obtained, that is, the contacts possess lower barrier height, smaller contact resistance and better ohmic coefficient, without damaging bulk CdZnTe properties.

结果表明，在353~373 K温度范围内进行热处理可以获得更优化的电极接触性能，测试得到电极与CdZnTe接触势垒较低，接触电阻较小，欧姆系数最佳，并且不会破坏CdZnTe体材料本身的性能。

I'm strongly against the death penalty — it's an eye for an eye.

我不赞成死刑——这是以牙还牙的报复行为。

And to get you the support you need, we're enlisting all elements of our national power: our diplomacy and development, our economic might and our moral suasion, so that you and the rest of our military do not bear the burden of our security alone.

并给你们所须的支援，我们正徵召国家所有各种的力量：我们的外交及发展，我们的经济力量与道德劝说，所以你们与其他军人不须要孤独地负起国家安全的责任。