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threshold voltage相关的网络例句

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与 threshold voltage 相关的网络例句 [注:此内容来源于网络,仅供参考]

The differences of the threshold voltage and mobility with the same device distance are further studied.

这些元件间差异行为的变异性分布将可以用我们所提出的数学模型加以描述,取代之前所广泛采用的高斯分布。

The threshold voltage increases with the increase of the thickness in nanometer thickness range.

因此人们对BN膜的场发射进行了一些研究,C掺杂[10]和S掺杂[11]的BN膜场发射具有

Due to improving the match of circuit, the transition point has little connection to threshold voltage.

该电路结构简单,适于低压工作,温度的迟滞宽度易于调节。

The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.

在均匀的高电场应力下,MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。

Only need to input hysteresis comparator type (in-phase, RP) and the upper and lower threshold and the comparator voltage comparator can be the external data!

只需要输入迟滞比较器类型和上下门限以及比较器工作电压即可得到比较器外围数据!

In order to emulate and evaluate the system performance, the signal-to-noise and probability of detection vs. the gain and threshold voltage of APD arrays were discussed in this paper.

为了仿真评估系统的性能,主要分析了APD阵列增益对系统信噪比和探测概率的影响,APD阵列的阈值电压对系统探测概率的影响。

It is observed that the threshold voltage, gain factor and current in linear and saturation region mismatch linear depend on the inverse of the square root of the device area.

由已经获得的经验知道,线性区和饱和区的阈值电压、增益及电流等参数的不匹配性均与器件面积的平方根成反比。

he influence of pitch's change on the threshold voltage is investigated in wedge-shaped cholesteric sample cell.

摘 要:从实验和理论两个方面研究了斜劈盒中胆甾相液晶螺距变化对阀值电压的影响。

Second,using this technique,the dual-threshold voltage techniques and the multiple supply voltages techniques,a novel domino XOR gate is present and its static power and dynamic power are reduced by up to 82% and 21%,as compared to the standard N type domino XOR gate.

然后,在此技术的基础上,综合应用多电源电压技术和双阈值技术设计了功耗更低的多米诺异或门,与标准的n型多米诺异或门相比,静态功耗和动态功耗分别减小了82%和21%。

The good performance is related to the low work-function metal, Ytterbium, makes the threshold voltage lower successfully and small equivalent oxide thickness by high κ dielectric material.

这些良好的特性是因为拥有低功函数的镱可以成功的将临界电压降低,还有高介电系数介电层闸极可以得到较薄的等效氧化层厚度。

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This is the inheritance of the tribe of the children of Issachar according to their families, the cities and their villages.

19:23 这些城并属城的村庄就是以萨迦支派按着宗族所得的地业。

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网站做完了以后,别躺在那里等着客人从天而降。