查询词典 threshold voltage

This applicationmodulates the threshold voltage and, thereby, the time delay, of a free-running oscillator.

这样的应用调节阈值电压，从而调节自激振荡器的延迟时间。

The experimental results show that this instable drift of threshold voltage induced by slow interface states is repeatable at each power-on measurement.

结果表明，该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。

Base on the threshold voltage model presented, an intrinsic drain current model in strong inversion region is developed, which can describe the short-channel effects such as DIBL and charge-sharing effect well, and give special considerations for mobility, velocity saturation, channel length modulation and quantum effect. Based on the front interface surface potential model, a formula of unified inversion charge is derived, and an intrinsic drain current model in middle inversion region is developed.

利用所提出的深亚微米FD器件正、背界面表面势模型，建立了一个能够完整描述深亚微米FD器件本征亚阈漏电流特性的模型，能够准确地描述DIBL效应和背沟道漏电效应；利用所提出的阈值电压模型，建立了深亚微米全耗尽器件的本征强反型电流模型，很好地描述包括DIBL效应、电荷分配效应在内的小尺寸效应，对迁移率、速度饱和效应、沟道长度调制效应和量子效应进行了特别的考虑；利用所提出的深亚微米FD器件正界面表面势模型，推导了统一反型层电荷公式，建立了深亚微米FD器件的本征中反型漏电流模型。

Based on the 2-D distribution of channel impurity, the distribution of 2-D electric field and 2-D interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation induced positive spatial charge, is analyzed by using image charge method. Resolving Poisson equation, the mobility expression of N-type and P-type non-uniform channel MOS and the mathematics expression of the threshold voltage model of DMOS are obtained.

基于沟道杂质的非均匀分布，借助镜像法导出非均匀沟道辐照正空间电荷和沟道中电离杂质的二维场及其作用，给出非均匀沟道DMOS器件辐照正空间电荷与沟道杂质的二维互作用势。

Quantum effects in Si n-MOS inversion layer at high substrate concentration. Solid-State Electron, 1990, 33(12): 1581～15854 Van Dort M J, Woorlee P H, Walker A J, et al. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's.

结果表明：在高衬底掺杂浓度时，即使在弱反型区量子化效应也能导致载流子分布和电流产生明显的降低(例如： 1.5×1018 cm-3时，可降低一个数量级以上)，从而导致开启电压的升高。

A continuous input pulse train triggers the monostable circuit, and a control signal modulates the threshold voltage.

连续的输入脉膊火车引起单稳线路，而且控制信号调整门槛电压。

We also prove the degrading mechanism is independent of the effect of parasitical resistance and explain the change of the threshold voltage and mobility by activation energy extraction under mechanical strain.

我们也做了处於挠曲状态下寄生电阻与活化能的参数萃取分析，证明了应力挠曲所造成的劣化效应与寄生电阻无关以及从活化能的改变上进一步地解释了电子迁移率和临界电压的劣化情形。

Both forming gas and SiN capping can effectively passivate interface states, and result in threshold voltage difference.

氮氢混合气体退火和具有氮化矽覆盖层的元件都可以有效地修补界面的缺陷，但是二者具有不同的临界电压。

In this paper,the threshold voltage,the peak of proportional difference and the interface trap density of NMOSFET are extracted from the output characteristic by the proportional difference method.

在本文中，用比例差分方法从NMOSFET器件的输出特性提取了阈值电压、输出特性的比例差分的峰值和界面陷阱密度。

The relationship between the threshold voltage and the peak of proportional difference,and between the interface trap density and stress time are also acquired.

得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。

These are places without aristocratic baggage; egalitarian places open to talent, self-improving, engaged in learning and innovation through networks that were at once competitive and cooperative.

这些地方没有贵族遗风作祟，而且对于那些有天分的人是开放的平等之地，这些人善于通过那些曾经很具有竞争力与合作精神的关系网进行自我提高以及学习创新。

Christine: You don't want to see me?

你不想见我？