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threshold voltage相关的网络例句

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TheSG3525 internal integration has the 5.1V voltage source (its precision can achieve 5.1±1%V), the double threshold comparator(with the exter connection electric circuit consist of constitution oscillator), the temperature compensation circuit, the over-current protection circuit, two levels of differential amplifiers and so on.

SG3525片内集成有5.1V基准电压源(精度可达到5.1±1%V)、双门限比较器(与外部的接口电路构成振荡器)、温度补偿电路、过流保护电路、两级差分放大器等。

pseudomorphic high electron mobility transistors ; enhancement-mode ; depletion-mode ; threshold voltage ; GaAs

国家自然科学基金(批准号:60276021);国家重点基础研究发展规划(批准号:G2002CB311901)资助项目

74LS47N Pinout: The voltage at the TUNDER pin is equal to a logic-low level if the sensor detects a temperature that is less than the factory-programmed threshold temperature.

74LS47N引脚说明:在TUNDER引脚的电压等于逻辑低电平如果传感器检测到的温度是比工厂编程的起点温度低。

Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.

应变Si pMOSFET以多晶SiGe做栅,既能提高空穴的迁移率,又能调节器件阈值电压而不会对载流子引入杂质散射,因而提高了器件性能。

By analyzing standard deviations of parameters' differences, it is found that the interdigitated method is indeed superior than the original. Besides, Vth and Muo are inversely proportional to the interdigit's finger numbers, especially the threshold voltage. Therefore, a model is proposed to predict the performance of the interdigitated method, which has high accuracy with the real data.

藉由分析元件参数差值的标准差,我们发现叉合方法比传统方法具有更优良的特性,其中位障电压与迁移率差值的标准差与叉合数目呈现反比,特别是位障电压,因此我们提出一个公式以准确预测叉合方法的效能。

The non-uniform channel impurity, the non-equal surface potential for the changing of balance energy band and the gate capacitor by the edge effect is thought about; the mathematics expression of the deep sub-micron non-uniform channel DMOS threshold voltage model is obtained.

计及沟道区杂质的二维非均匀分布、平衡态能级对沟道各点表面势的影响和栅电容的边缘效应,给出深亚微米DMOS的阈值电压二维解析式。

By simply specifying primary and secondary limits for the battery resistance and the minimum voltage threshold, the battery tester quickly displays Pass, Warning or Fail based on the combination of reference values, for fast and accurate assessment.

通过简单地指明小学和中学的限制电池电阻和阈值的最低电压,电池测试仪快速显示密码,警告或失败的基础上结合的参考值,为快速,准确的评估。Ordering Information 订购信息

It was concluded that charge injection and recombination would restrict the field electron emission, and increase the threshold voltage of flashover and decrease its scattering.

发生在绝缘体表层的电荷注入和复合过程能够在一定程度上抑制场致电子发射,从而提高沿面闪络电压,并降低闪络电压值的分散性。

Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance.

闸极掘入是改变闸极与电流通道的距离而使截止电压改变,进而使电晶体的表现最佳化,闸极掘入的技术已经广泛的应用在三五族半导体里。

Enhanced threshold voltage shift and transconductance reduction were observed after CHE stress for the nitrided devices.

在通道热电子压迫测试之后,可以发现更严重的临界电压偏移与转导值降低现象。

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这些地方没有贵族遗风作祟,而且对于那些有天分的人是开放的平等之地,这些人善于通过那些曾经很具有竞争力与合作精神的关系网进行自我提高以及学习创新。

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你不想见我?

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