查询词典 temperature coefficient of resistance

In addition, a negative temperature coefficient of resistance can be observed in Sb nanowire arrays with diameter of 40nm while applying a 7T magnetic field perpendicular to nanowire axis.

研究了电参数变换对Sb纳米线的结晶态、择优生长方向、晶体生长速度的影响，研究了不同直径的单晶Sb纳米线的获得条件，探讨了这种方法对其它金属纳米线生长的普适性，讨论了脉冲电沉积控制晶体生长的机理。

The temperature coefficient of resistance may be positive or negative.

电阻温度系数有正有负。

Especially since Haayman et al discovered the property of Positive Temperature Coefficient of Resistance of BaTiO〓 ceramics in 1955, a new field of their development and application was created.

特别是海曼等人发现BaTiO〓陶瓷的正温度系数特性以来开创了BaTiO〓陶瓷发展和应用的一个新领域。

E. , a positive temperature coefficient of resistance .

随烧结温度的升高，材料的电阻率均有降低，TiO〓加入量即TiN含量处于临界值附近（20％TiO〓）的材料降低幅度最大。

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance.

氧化钒薄膜由于具有高电阻温度系数，近年来被广泛应用于非制冷红外探测及红外成像领域。

The VO x(x.5) film has a negative temperature coefficient of resistance of (-1~-4)%K -1 ,and an activation energy of 0.078eV~0.110eV.

对不同温度退火后氧化钒薄膜在10～100℃范围内测定了薄层电阻随温度的变化，得到的电阻温度系数值为(-1～-4)%K-1。

It is found that CO2 laser irradiation results in a drsmiatic decrease in the resistivity and remarkable increases in the insulator-metal transition temperature T(subscript P and the temperature coefficient of resistance TCR.

与传统的高温退火类似，经CO2激光辐照后，样品的电阻率从1.3mΩ？cm下降到0.5mΩ？cm，绝缘态－金属转变温度和温度电阻系数分别从255K和7.9%？

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l～3创新点及第5创新点已经分别申请了两项中国发明专利："薄膜式锰铜超高压力传感器"和"低电阻温度系数锰铜薄膜的制备方法"。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜，采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响，得到优化的镀膜工艺参数，主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W，在此基础上，进行不同温度条件的真空退火，得到薄膜TCR在-2.5%~-4.5%范围。

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l～3创新点及第5创新点已经分别申请了两项中国发明专利：&薄膜式锰铜超高压力传感器&和&低电阻温度系数锰铜薄膜的制备方法&。

If you are unfortunate enough to the lovelorn, please tell me, I will help you out, really, please contact me!

如果你不幸失恋了，请告诉我，我会帮助你摆脱困境，真的，请联系我啦！

China's plan to cut energy intensity by 20 percent and pollutant discharges by 10 percent between 2006 and 2010 is a case in point.

中国计划在2006年到2010间降低20%的能源强度和减少10%的主要污染物排放，就是一个这样的例子。