查询词典 junction type transistor

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

A power transistor sometimes has an associated sense transistor.

有时一个功率管会有一个相关的敏感管。

There is sufficient margin for a collector loss in a power transistor, and the high speed high fT transistor which was moreover excellent in the high region property is adopted.

的截止频率是90MHz的数量，并抑制这种晶体管的开关失真是无法避免公司一流的，而且，还实现了平坦的高区域相反应。

However, because of the obvious snapback breakdown characteristic of NMOS transistor and the layout geometry effect on the distributed base resistance of each parasitic lateral bipolar transistor, multi-finger NMOS cannot be triggered on uniformly under ESD stress.

然而由於N型金氧半电晶体具有明显的骤回崩溃特性，以及布局上每根指状N型寄生横向双载子电晶体之等效基极电阻之不同，造成多指状结构N型金氧半电晶体在静电放电轰击下，并不会均匀的导通来排放静电放电电流，而是集中於某些指状N型金氧半电晶体。

Taking frequency conversion of semiconductor transistor as an example, the basic principles and some problems related are introduced in the article, integrating emitter-injected frequency conversion circuit of transistor, which is often used in superheterodyne to discuss about it.

分析了变频的基本原理和设计变频器的有关注意问题；从三极管输入回路和输出回路的信号入手，讨论了超外差式收音机常用的变频电路的工作原理。

The design for impedance converting circuit of input current,transistor amplifying circuit and converting circuit of output current is presented.The telegrapher equations are adopted to determine the impedance of transmission-line transformer,which is used to convert circuit impedance between signal source and transistor.

讨论了放大器输入回路阻抗变换电路、晶体管放大电路以及输出回路阻抗变换电路的设计思想，运用电报方程从理论上推导出用于信号源和晶体管之间阻抗变换的传输线变压器输入输出阻抗计算公式，由此设计出模拟信号处理电路中非常重要的AB类高功率放大器。

This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor.

这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的。

Because the upper transistor is an emitter follower (gain =~1); and the lower transistor is a variable resistor.

其增益大约为1，这大约为1的增益，不是晶体管放大所得，而是晶体管等效为电阻的结果。

Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area.

在所述存储器阵列区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(40)之前，在所述外围电路区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(34)。

Secondly,two regulatable current sources for exicitation of magenetic powder dynamic brake are studied respectively with buck and interleaving two-transistor forward topology. In the power supply with interleaving two-transistor forward topology design,simulations are implemented with Saber simulator,thus the best parameters are achieved which ensured the stability and dynamic characteristic.

二、分别用 BUCK 式和交错并联的双管正激式电路拓扑，研制了磁粉制动器的直流励磁电流源，其中对于交错并联双管正激式的电路进行了基于 Saber 的仿真，确保了电路参数的选取能够保证电路稳定性与动态性能要求。

The receding calculations and experiment analyses in this subject are built on the blood cast of pig tongue.

本研究课题的前期工作是采用猪舌血管铸型模拟人舌而进行的数值计算与实验分析。

"Each human infection constitutes an opportunity for genetic modification of the virus through reassortment, mutation, or both...."

&每一次人类的感染都暗藏着一次基因修改的机会，无论是通过病毒的整合、突变或者兼而有之。。。。&