查询词典 junction type transistor

However, since the capacitor forces an ac ground at the emitter of the output transistor, the capacitor charging currents are proportional to the antilog of the voltage at the base of the output transistor.

然而，由于电容器部队在一个输出晶体管发射极交流接地，电容器的充电电流在输出晶体管的基成正比的电压反对数。

In one embodiment, a memory device comprises a first memory cell and a second memory cell, wherein the first memory cell comprises a first transistor coupled to a bit line and the second memory cell comprises a second transistor coupled to a bit line bar.

在一实施例中，一种存储装置包含一第一存储单元及一第二存储单元，其中该第一存储单元包含一耦接至一位线的第一晶体管，而该第二存储单元包含一耦接至一位线棒的第二晶体管。

The article introduced the principle and apply of the transistor avalanche through four example of transistor oscillator、 avalanche oscillator、 audio signal generator 、 flash metronome.

本文介绍了晶体管的雪崩原理，通过张弛振荡器、崩振荡器、音频信号发生器和闪光节拍器四个例子介绍了雪崩晶体管的应用。

The present invention relates to an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT (Insulated Gate Bipolar Transistor)-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for limited leading of current, and at least an IGBT-based switch, whereby the IGBT(Insulated Gate Bipolar Transistor)-based switch (Q2) is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing a smooth flank of an output signal at the selected conductor element.

本发明涉及一种用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备，包括：至少一个可开关的基于IGBT的限制器单元，用于选择性地限制浪涌电流，其具有至少一个限流导体元件，该限流导体元件用于有限引导电流，和至少一个基于IGBT的开关，其中基于IGBT的开关(Q2)用作受控电流限制器和旁通元件，和至少一个控制设备，用于控制基于IGBT的开关，其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

It also requires less load capability of high-voltage pulse power supply, and allows using avalanche transistor or MOS transistor to replace expensive krytron and unstable spark gap. That has simplified the whole system and improved reliability, stability and flexibility.

降低了对脉冲高压驱动电源负载能力的要求，允许用雪崩管或MOS管代替极其昂贵的冷阴极管和稳定性差的高压火花隙，提高了可靠性和稳定性，简化了系统，增加了灵活性。

Change in oscillation of the transistor circuit to gain, or transfer large transistor operating point.

调换振荡回路中各晶体管，使其增益提高，或调大晶体管的工作点。

Main component of composition of the negative type photoresistive agent is polyimide, which possesses pendent -COOH. Reaction between partial carboxylic acid group and monomer with glycidyl acrylate generates bond junction. Rudimental other part of carboxylic acid group and additional additive component with third amino group and monomer of C=C double bond forms ionic bond junction.

本发明的负型光阻剂组合物的一主要成份为聚亚酰胺其具有悬垂的-COOH且部分的羧酸基与带有环氧基团的丙烯酸酯单体glycidyl(methacrylate反应形成键结，而残留的另一部分羧酸基与另外添加的成份带有第三胺基及C＝C双键的单体形成离子键结。

The n-type gate modulation could be explained by the bending effect of valence band in the Schottky-barrier junction. The photoconductive diode and optical switch behavior was demonstrated for the first time from a C/CNX multi-walled nanotube junction with a Schottky barrier. Theconductivity of nanotube can be reversibly changed by 3 to 4 orders of magnitude when the 5 mW cm2 white lights was turned on and off.

器件原理是栅极静电场调节碳纳米管和CNx纳米管间的Schottky势垒的高度和宽度，从而影响载流子的传输。8首次利用单根CN万／C纳米管作为半导体材料制备了Schottky光导二极管和光开关。

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistor s are studied.

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。

For the traditional diode string, the parasitic p-n-p bipolar junction transistor devices in the diode string will induce a large leakage current into the substrate, especially under high temperature condition.

因为寄生元件的存在，传统的二极体串将会产生严重的基极漏电流问题，尤其是在高温的状态下。

It was just a normal day of school

那只是上学的普通一天

Which is a very good reference in this issue.

这是一个在这个问题上很好的参考。