查询词典 junction diode

It is found theoretically and simulation that a piece of solar cell have same photocurrent in different diode factor and reverse saturation current at same temperature and irradiation. This paper describes a new combined perturb and observe method for acquire the actual diode factor n and reverse saturation current Io.

经过理论分析与仿真研究，发现同一块太阳能电池在相同的温度和照度，不同的二极管反向饱和电流Io和品质因子n的情况下，输出的光生电流是相等的。

In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

Based on this method,large-area SiNW p-n junction diode arrays also were successfully prepared.

此外，硅纳米线阵列结构具有优异的减反射性能，探索了其在太阳电池中的应用。

At the base and near the p-n junction interface when diode is working under the applied alternating current.

基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系。

However, care must be exercised when handling the device to avoid strong static fields that may degrade a diode junction, causing increased input leakage currents.

但是，必须注意在处理设备，以避免强烈的静态字段，可能会降低二极管的交界处，造成漏电流增加投入。

Along with the zener diode PN junction temperature change, its regulated voltage value can have the corresponding drifting.

随着稳压管PN结温度的变化，其稳定电压值会发生相应的漂移，从使用上来说其变化值越小稳压性能越好。

Simulation of PN junction diode lays the foundation for the simulations of other semiconductor elements.

本文结合非耦合数值方法，通过求解半导体方程对PN结二极管进行模拟分析，得到了一些重要物理参量分布，这为深入研究电磁辐射对半导体元件的干扰奠定了基础。

With its simplest structure –PN junction, the diode has been studied in this paper as an example for making an explanation on the physical quantity and relevant mathematical expression corresponding with respective parameter of SPICE model in the library of simulation software.

文章以结构最简单的二极管PN结作为研究对象，旨在对与仿真软件的元件库中各元件的SPICE模型参数相对应的物理量及数学表达式加以解释和说明，并就这些参数如何反映二极管的电气特性这一问题作了一定的分析。

The mechanism is studied by Monte Carlo method while 1.8MeV and 4.3MeV alpha particles irradiating the pn junction 6H-SiC diode.

为了研究6H-SiC材料制作的pn结二极管探测器的辐照特性，采用蒙卡程序模拟研究了4.3和1.8MeV能量的α粒子在辐照探测器中的物理过程。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.

采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件。

A historical region of southwest France between the Pyrenees and the Garonne River. The duchy of Aquitaine was joined with France after the marriage of Eleanor of Aquitaine to King Louis VII in1137, but its possession was disputed after her subsequent marriage to Henry II of England.

阿基坦法国西南部一个历史地区，位于比利牛斯山和加隆河之间，在1137年阿基坦的埃莉诺与国王路易斯七世结婚之后阿基坦公国加入法国，但当她再嫁英国亨利二世后，其归属权便受到争议

There are moments when I look at the smiling , happy faces of my expectant staff and wonder how they will cope when confronted by an outraged housemaster along with an unrepentant and recalcitrant bleached blond teenager in 18 years ' time .

有时候，我看着那些满怀期待的员工微笑，幸福的脸，想着当他们遇到一位愤怒的宿舍管理员和一位不知悔改，叛逆，而且将头发染成白色的18岁少年时，他们会如何处理。