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The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

In this study, AlGaN/GaN hetero-junction photo-transistors in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.

中文摘要本论文针对氮化镓/氮化铝镓系列异质接面光电晶体作为紫外光波段侦测器之相关制作与研究，包括於磊晶结构中有无插入一层低温成长氮化镓层之两种异质接面光电晶体，并比较其元件讯号放大效果以及响应时间的改变。

On the basis of photovoltaic signal of cubic GaN, we not only obtained the bandgap of cubic GaN, but also obtained the minority carrier diffusion length of cubic GaN which is in the range of 0.32 and 0.14μm.

通过对光伏曲线的研究了，提出了一种测量禁带宽度的方法，并测量出n型GaN的少子扩散长度在0.14μm和0.32μm之间，与六方相GaN的报道结果一致。

The experimental results indicate a luminescence enhancement effect of hydrogen by passivating certain defects in GaN. However, such effect must be realized by overcoming high migration barrier in GaN. In the experiments, low energy electron beam supports enough energy to hydrogen to diffuse and passivate defects in GaN.

研究表明氢原子在GaN中可以钝化缺陷来增强发光，但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现，而低能电子束可以提供足够的能量使得氢原子克服扩散势垒来实现钝化作用。

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Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN.

使用稀土元素Tb作催化剂，通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜，成功制备出GaN纳米棒。X射线衍射测试显示，GaN纳米棒具有六方结构。

35, favour kind and enmity is complained 50 carry--, Mao Zedong and Zhang Gan (2)Be ashamed into anger of proper Zhang Gan when, somebody add fuel to the flames --, a warden informs against to him say, sent in this campus upheaval " big use " that " character of drive Zhang Xuan ", mao Zedong of 2 grade student is drafted.

三十五、恩恩怨怨五十载———毛泽东和张干（2）正当张干恼羞成怒的时候，有人火上浇油了———一个学监向他告密说，在这次学潮中派了"大用场"的那份《驱张宣言》，是二年级学生毛泽东起草的。

Luminescence evolutions of GaN irradiated by low energy electron beam before and after hydrogenation has been investigated by means of cathodoluminescence, combined with the diffusion properties of hydrogen in GaN.

本文结合氢在GaN中的扩散特性，运用阴极荧光谱，对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究。

Using Crosslight APSYS software, the effects of the electrode shapes on the electrical and optical properties have been studied for the chip structure of p-GaN, InGaN/InGaN MQW, n-GaN/ and sapphire.

采用Crosslight APSYS这一行业专业软件对p-GaN、InGaN/InGaN MQW、 n-GaN/和Sapphire的芯片结构研究了不同电极形状与器件的光电性能之间的关系。

That's what makes this mod unique.

这也正是这个MOD独特。

I now feel furious and want to do something.

现在我觉得非常气愤，想做点什么。