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The electron location function shows the electronic density changes at both the atomic vacancies and antisites. There is an obvious absence of electronic areas where the vacancy of Ga has the dangling bonds of N, which are favourable for the sdsorption of metal atoms. In contrast, at the vacancy of N, there is more electron distribution(ELF:0.16-0.45), forming lone electron pairs which are profitably available to combine electronegative atoms.

电子局域函数显示了表面空位和替位处的电子密度变化，表面Ga原子空缺处有非常明显的缺电子区域，悬挂键临近N的电子密度增大，有利于对金属原子的吸附；N原子空位处的ELF值为0.16-0.45，有利于同电负性较大的原子结合。

The dissertation is concentrating on the topic of a high power, tunable, millimeter wave free electron laser. The tunable ability of the mm wave FEL is studied. FEL powers are improved by novel variable parameter wigglers. A high brightness electron beam is achieved for FEL. These technologies are very important for realization of high power compact free electron lasers.

本博士论文围绕高功率可调谐毫米波自由电子激光器的研究主题，研究毫米波自由电子激光的调谐特性，用新型磁场逐渐增强的摇摆器等手段提高自由电子激光的效率，研究体积小的高亮度电子束源用于自由电子激光，为研制新一代小型化高功率自由电子激光器提供关键技术。

Based on the structure, those human diseases related mutation sites are mapped onto the structure accurately. As a result, it is found that these sites are all around the electron transfer prosthetic groups or ubiquinone. And these mutations will alter prosthetic groups' binding or ubiquinone's binding, causing electron leakage from the prosthetic groups in the electron transfer chain, producing reactive oxygen species and leading to tumor formation.

利用线粒体复合物 II 的结构对已知与人类疾病相关的该复合物突变位点进行了精确定位，发现这些突变位点均位于电子传递体或辅酶 Q 结合位点的周围，它们的突变或影响了电子传递体的结合，或影响了辅酶 Q 的结合，从而导致电子传递的中断，电子逃逸到线粒体基质中或线粒体内膜中，经过一系列下游途径导致疾病的产生。

The ratio of electron spin energy to the interaction energy between electron and LO phonon decreases with increasing z, so does the ratio of electron spin energy to the interaction energy between polarons.

电子自旋能量与电子和LO声子之间的相互作用能之比以及与声子之间的相互作用能之比都随z增加而减小。

Will voltage electron beam deflection plate to tie the direction switch "is" location, rotating clockwise direction deflection plate voltage Potentiometers (RP2), the electron beam is deflected upward, the greater the voltage between the deflection plate, the electron beam deflection angle the bigger.

实验一。观察电子束在电场中的偏转将电子束偏转板电压方向开关扳到&上正&位置，顺时针方向旋转偏转板电压电位器(RP2)，电子束则向上偏转，偏转板之间电压越大，则电子束偏转的角度越大。

Compared to figleaf gourd, cucumber and sponge gourd showed higher net CO_2 assimilation, actual quantum yield of PSII electron transport Φ_(PSII, photochemical quenching coefficient, the efficiency of excitation capture by open PSII centers, rate of energy dissipation via light-independent thermal processes and fluorescence J_(f,D, energy flux via linear electron transport J_(PSII and electron flux for photosynthetic carbon reduction all the time during the measuring day.

黄瓜与丝瓜在净二氧化碳同化速率、光系统Ⅱ光化学量子效率Φ_(PSⅡ、光化学猝灭系数、开放的光系统Ⅱ中心激发能捕获效率、不依赖于光的热能与荧光耗散光能J_(f，D、PSⅡ总的光合电子流量J_(PSⅡ及用于光合碳还原的电子流量等参数上均表现出比黑籽南瓜更高的数值。

GHz ridge－loaded helical groove slow wave structure with a 20kV electron beam are given and the investigations of the effect of the ridge dimensions and electron beam parameters on the small signal gain are carried out. It is indicated from the calculation results that this type of structure is suitable for use as s SWS of high power, high gain but narrow passband millimeter TWT, of which the 3dB gain bandwidth is 3.4%. In order to increase the bandwidth, the reduction of the ridge gap or the increase of the electron beam current in an allowable range may be useful.

GHz的脊棱加载慢波结构的具体尺寸，并对此结构中小信号增益随脊尺寸的变化情况及电子注参数对其影响进行了研究，计算结果表明：此结构适宜于作为高增益窄带毫米波大功率行波管的慢波线，其3dB增益带宽为3.4%，为了展宽其工作带宽，可以适当减小间隙宽度，也可在一定范围内提高电子注电流。

Firstly, we investigate the influence of the hole injection layer on the performance of the OLED. Evidence shows that m-MTDATA exhibits a dense film structure and fine surface morphology, leading to easy hole migration. Furthermore, a low-voltage driving of OLEDs has been achieved by doping 4F-TCNQ into m-MTDATA layer. Secondly, we obtain a highly efficient OLED by using a new oxidiazoles, an efficient electron-transporting molecular materials. Finally, we have realized the efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer composed of BPhen with Liq co-deposited layer. With this cohost strategy, we improve the power efficiency by～21 % while reduce the driving voltage by～13%.

首先研究了不同空穴传输层对有机电致发光器件的影响，结果表明，由于m-MTDATA具有良好的成膜性，以及空穴注入能力，可以改善空穴向发光层的注入，提高了器件的效率，进一步在m-MTDATA中掺入4F-TCNQ可以显著降低器件的驱动电压；其次，利用一种新型含氟噁二唑类衍生物做电子注入层获得了高效有机薄膜电致发光器件；最后，研究了Bphen：Liq混合层的电子传输特性，表明混合层的电子传输能力显著提高，基于共基质电子传输层的器件的电压比传统器件降低了13％而效率却提高了21％。

Moreover, the merging into these quantum Hall states with decreasing temperature appears to deviate from a semicircle relation. This could be due to the fact that the presence of inelastic scatterings (electron-phonon, electron-electron, etc.) is known to affect the localization effect.

此外，随著温度降低，分析结果显出温度流线并入量子霍尔态的行为偏离了预期的半圆关系，此可能由於非弹性散射(电子-声子、电子-电子等)的存在对局域效应造成影响。

By comparing the electron gain of the prepared silicon microchannel plate with conventional one,we found the electron gain of Si MCP was larger than glass MCP.Though there were some problems to be solved in the manufacture of electron multiplier of Si MCP,it was expected that Si MCP would be a new approach to enhance the performances of MCP and the quality of image devices.

引言 微光夜视、高灵敏度粒子成像探测和光子计数、大屏幕快速图像显示以及X射线诊断等系统，已在现代武器装备、空间技术和核辐射探测等领域中得到广泛应用，其中微光图像增强器件的核心部件之一就是二维阵列式通道电子倍增器件微通道板 MCP Microchann

The system can be widely used in belt weighing and batching process control,etc.

介绍了基于智能模糊控制的嵌入式配料系统的设计方法，对模糊PID控制过程和系统调零作了重点的讨论，同时给出了PID控制的程序流程图和系统定长调零子程序。

"I dunno," she answered,"but if you show me aroun', I'll recognize it from the lighthouse just outside the porthole."

"我不知道，"她回答说，"如果你能带我转转，我能认出来的，因为灯塔就在舷窗外。"