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annealed相关的网络例句

查询词典 annealed

与 annealed 相关的网络例句 [注:此内容来源于网络,仅供参考]

The N and Al elements hindered phase transfer of TiO_2, restrained growth of nano-TiO_2 particles and improved the crystallization temperature. Degradation ability of N and Al co-doped TiO_2 thin films annealed at 500℃to acid fuchsin whether under UV light or under artificial simulated sun light was the best.

无论是在紫外光下还是人工模拟太阳光下,其对酸性品红的降解效果存在一个最佳退火温度。500℃退火处理N和Al共掺杂TiO_2薄膜的光催化活性最高。

Selecting the suitable fulgurite medium KCl and annealed at 600~800℃,the precursor can grow into SnO2 nanorods via self assembly.

选择合适的熔盐介质 KCl,在600~800℃对前驱物进行退火处理,前驱物纳米颗粒可自组装生长形成SnO2 纳米棒、纳米线。

The giant magneto-impedance effect in DC current annealed Co71.8Fe4.9Nb0.8Si7.5B15amorphous glass-covered wires is presented.

本文研究了直流焦耳处理对Co71.8Fe4.9Nb0.8Si7.5B15玻璃包覆非晶丝巨磁阻抗效应的影响。

The giant magneto-impedanceeffect in DC current annealed Co71.8Fe4.9Nb0.80.8Si7.57.5B1515 amorphous glass-covered wires is presented.

本文研究了直流焦耳处理对 Co71.8Fe4.9Nb0.80.8Si7.57.5B1515 玻璃包覆非晶丝巨磁阻抗效应的影响。

The influence of DC bias current from I=0mA to I=5mA on the GMI effect in the glass-covered wires annealed by 70mA DC current is investigated.

本文还研究了偏置电流对经过70mA直流焦耳处理的Co71.8Fe4.9Nb0.8Si7.5B15玻璃包覆非晶丝巨磁阻抗效应的影响。

The influence of DC bias current from Ib=0mA to Ib=5mA on the GMI effect in the glass-covered wires annealed by 70mA DC current is investigated.

本文还研究了偏置电流对经过70mA直流焦耳处理的 Co71.8Fe4.9Nb0.80.8Si7.57.5-B1515玻璃包覆非晶丝巨磁阻抗效应的影响。

The influence of DC bias current from Ib = 0mA to Ib = 5mA on the GMI effect in the glass-covered wires annealed by 70mA DC current is investigated.

随着偏置电流的增加,非对称性逐渐增强,直到偏置电流为2mA;当偏置电流继续增大时,非对称性逐渐减弱。

Another of the potential causes is the age of an individual because we all acknowledge that when we become older, our gristle is less annealed as well as lessened its capability to fix itself.

另一个潜在原因是年龄的个人,因为我们都承认,当我们成为老年人,我们的软骨少退火,以及减轻其能力,自我修正。

The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.

采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜,所生长的薄膜在未退火和退火时表现出不同的平面内取向。

All films were deposited by spin-coating at 2000 rpm, hotplate drying at 60 °C and annealed in air at 450 °C. It was observed that all films were polycrystalline in nature with a hexagonal wurtzite structure.

全部 薄膜沉积的旋涂法在2000年的rpm ,炉具干燥,在60 ° C和空气中退火450 ° C的有人所有多晶硅薄膜的性质六角纤锌矿结构。

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