查询词典 annealed

In contrast, the concentration of deep defects is very low in annealed undoped InP and the doping of Fe acceptor by diffusion acts as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance.

相比之下，非掺退火半绝缘InP材料中深能级缺陷浓度很低，通过扩散掺入的铁受主作为唯一的补偿中心钉扎费米能级，因而表现出优异的电学性质。

Acetanilide was annealed at 130℃,it was reached at about 30min.

时，在130℃热处理，约30min时就达到平衡状态。

The optical transmission decreased when the film annealed in air was subjected to 20% CO at 350℃.

对于经过空气气氛中热处理的薄膜，在350℃通20％CO，薄膜的透射比下降。

The film annealed in air is similar to silicon dioxide in structure. The appearance of polar bond Si-OH and the shrinkage of film cause the increase of dielectric constant.

大气条件下退火的薄膜样品以类SiO_2结构为主，强极性Si-OH键的生成和薄膜的剧烈收缩导致介电常数的上升。

With the analysis of the bond structure of the film as deposited and annealed, we can infer that the increased content of cage structure comprised of Si-O-Si bond with bigger bond angle may be the reason of decreased dielectric constant.

薄膜经过400℃热处理后，其介电常数由3.85降低到2.85，对其FTIR谱的分析指出，薄膜中鼠笼式结构比例的增加可能是薄膜介电常数降低的主要原因。

In order to meet the requirements of the design of radiation detectors, CdZnTe or Cd-(1-xZn-xTe wafers grown by vertical Bridgman method were annealed in the vapor of In .

为了满足辐射探测器件的需要，将生长得到的Cd_(1-x)Zn_xTe晶体在In气氛下进行退火处理能有效提高晶体的电阻率等性能。

Measurements of sensitivity showed that the films annealed at 500℃ had high ethanol sensitivity (67%), the sensitivity of butane is not high in the temperature around 225℃.

退火温度500℃的样品在工作温度225℃时，对乙醇有较高的灵敏度，灵敏度达67%，对丁烷的灵敏度不高。

The carder concentration and mobility of films(22～34％O_2 concentration) annealed are in the range of 4～8×10~(18)cm~(-3) and 2～5 cm/, respectively.

氧含量在22～34％的薄膜，热处理后的载流子的浓度和迁移率分别为4～8×10~(18)cm~(-3)和2～5 cm／。

The average size of CaSiO_3:1%Eu~(3+) agglutinated nanospheres drying at 70℃was below 100nm, and the uniform nanospheres with the average size of 350nm was prepared while annealed at 700℃. Further annealed at 800℃, the nanospheres almost breaked and melted down.

CaSiO_3：1%Eu~(3+)样品在70℃烘干后可以得到平均粒径在100nm以下粘合在一起的纳米球，当700℃焙烧后得到粒径为350nm左右的均一纳米球，当焙烧温度达到800℃时球体几乎全部破裂熔融。

Effect of annealing at high temperatures on compound films structures is great. For three hours in pure nitrogen(99.999 9%) ambients at 900℃ are annealed. The structural feature changes of iron-passived porous silicon are studied after being annealed by SEM and XRD.

退火处理对复合薄膜的形貌和结构都将产生较大的影响，对由水热腐蚀技术制得的铁钝化多孔硅进行高纯氮气(99.999 9%)下900℃退火3h，利用扫描电镜、XRD等分析手段对比研究了铁钝化多孔硅在退火前与退火后的结构变化特点。

I smile at your play with that little bit of a broken twig.

我微笑着看你玩那一段小小的树枝。

They may be produced for almost any shaft angle.

他们可能在制作中几乎任何一个轴角。