- 更多网络例句与蚀刻相关的网络例句 [注：此内容来源于网络，仅供参考]
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True to Tyler's philosophy, these were not simply etchings but were much more technically complex and combined etching with woodcut, stencil, aquatint, relief inking, and chine colle in a variety of different combinations.
诚如泰勒的哲学，这些作品都不是简单的蚀刻，而是复杂得多的技巧的结合，蚀刻与木版画、模版、凹版蚀刻、凸墨浮雕和中国胶各种各样不同的组合。
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Copper was etched from the unprinted areas of the PEN film using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.
铜蚀刻从PEN薄膜的未印刷领域使用的蚀刻剂浴含有三氯化铁蚀刻剂的力量解决42 °波美由RS供应。
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Copper was etched from the unprinted areas of the FR4 board using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.
铜被蚀刻从FR4电路板的未印刷领域使用的蚀刻剂浴含有三氯化铁蚀刻剂的力量解决42 °波美由RS供应。
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In silicon deep reactive ion etching using inductively coupled plasma etcher,a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth.
利用自感应耦合等离子蚀刻机进行硅深层反应离子刻蚀，得到了几微米宽的狭槽，其轮廓通常为正锥形，即蚀刻槽的宽度随着蚀刻深度的增大而减小。
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The process includes dry etching the protecting layer of AMR film; wet etching the permalloy layer of the AMR film; and dry etching the transition layer of the AMR film.
一种多层膜的干湿结合蚀刻方法，包括：干法刻蚀各向异性磁电阻效应薄膜的保护层；湿法腐蚀各向异性磁电阻效应薄膜的坡莫合金层；干法刻蚀各向异性磁电阻效应薄膜的过渡层。
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This is due to the rising temperature, caused by substances increases the distance and reduce the Intermolecular force of gravity, so with the solation rising temperature, surface tension is gradually reduced.
粘度：蚀刻历程洋，随着铜的不停凝固，蚀刻液的粘度不离会增增，使蚀刻液在基不活铜箔暗地上变不静性不离不不对，间接感化蚀刻成果。
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The selectively etching on germanium-on-glass structure can achieve visible light and infrared detection on the same chip with the unetched part for infrared detection and the etched part for visible light detection.
若在玻璃上覆锗的结构上做选择性的蚀刻，便可达到在同一晶片上在未蚀刻的部分来侦测红外光而蚀刻的部分侦测可见光的好处。
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Etchant chemicals: Etchant chemical components, it is not the same as the etching rate, etching coefficient.
蚀刻液的化学身分的构不败：蚀刻液的化学组分不不对别，其蚀刻速度不离不不异，蚀刻系数也不不对别。
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Specialized processes the stainless steel etching and each kind of combination craft, this company uses the craft for the most perfect photosensitive etching craft, this company etching's product is different in the market condition the common silk India plate, produces stainless steel etching line smooth non-tooth India, the design is precise, is perfect, suits the width is 10mm-1500mm, the length is 4000mm, the etching depth is deepest may achieve 0.35mm.
专业加工不锈钢蚀刻及各种组合工艺，本公司所采用的工艺为最完美的感光蚀刻工艺，本公司蚀刻的产品不同于市面上一般的丝印板材，所生产的不锈钢蚀刻线条平滑无齿印，图案精确、完美，适合宽度为10mm-1500mm，长度为4000mm，蚀刻深度最深可达到0.35mm。
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During etching fine details of the etch-resist pattern can be seriously compromised if either the unexposed etch-resist is incompletely removed or if some of the exposed and polymerised etch-resist is removed prior to chemically etching the metal or alloy.
在本蚀刻蚀刻的细节，抵制模式可以将受到严重损害，如果不是未曝光蚀刻，抵制是一种不完全删除或如果揭露和聚合性蚀刻，抵制被删除之前，化学蚀刻的金属或合金一些。
- 更多网络解释与蚀刻相关的网络解释 [注：此内容来源于网络，仅供参考]
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Etch Factor：蚀刻因子,蚀刻函数 (台) 蚀刻系数
Etchback 回蚀 (台) 凹蚀阴影 | Etch Factor 蚀刻因子,蚀刻函数 (台) 蚀刻系数 | Etching Indicator 蚀刻指标 (台) 蚀刻指示图
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etched：蚀刻 蚀刻
etched Vert 直刻 直刻 | etched 蚀刻 蚀刻 | evaluate Statement 评估陈述式 评估陈述式
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etcher：蚀刻师
etchant 蚀刻剂 | etcher 蚀刻师 | etching 蚀刻
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Etching Resist：抗蚀阻剂 (台) 抗蚀刻
Etching Indicator 蚀刻指标 (台) 蚀刻指示图 | Etching Resist 抗蚀阻剂 (台) 抗蚀刻 | Eutetic Composition 共融组成 (台) 共晶组成
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Etching Indicator：蚀刻指标 (台) 蚀刻指示图
Etch Factor 蚀刻因子,蚀刻函数 (台) 蚀刻系数 | Etching Indicator 蚀刻指标 (台) 蚀刻指示图 | Etching Resist 抗蚀阻剂 (台) 抗蚀刻
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Etching Indicator：蚀刻指标 (台)
Etch Factor 蚀刻因子,蚀刻函数 (台) 蚀刻系数 | Etching Indicator 蚀刻指标 (台) | Etching Resist 抗蚀阻剂 (台) 抗蚀刻
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Etching Indicator：蚀刻指针 (台) 蚀刻指示图
Etch Factor 蚀刻因子,蚀刻函数 (台) 蚀刻系数 | Etching Indicator 蚀刻指针 (台) 蚀刻指示图 | Etching Resist 抗蚀阻剂 (台) 抗蚀刻
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etchant：蚀刻剂
当要在Cl2与BCl3之间选择适合的主要蚀刻剂(etchant)时,则必须根据HfOx/SiO2的选择比来做选择. 图三中显示出在BCl3化学特性中,以不同的电浆源功率下的温度函式来表示HfOx的蚀刻率. 一般来说,蚀刻率会随着电浆源功率的增加而增加.
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etchants：蚀刻剂
Etch:刻蚀 | Etchants蚀刻剂 | Etched features 蚀刻特点
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etchants：腐(浸)蚀剂,蚀刻剂
esters 酯类 | etchants 腐(浸)蚀剂,蚀刻剂 | etching 蚀刻,浸蚀