as thin as a wafer

as thin as a wafer的基本解释

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极薄

与as thin as a wafer相关的网络例句 [注：此内容来源于网络，仅供参考]

The invention is directed a patterned contact sheet and to a method of bonding a cover wafer to an interposer wafer using the patterned contact sheet having a waffle-like pattern of a plurality of ridges and plurality of wells to form a cover/interposer combination or unit that can be bonded to a substrate having a MEMs device thereon, the cover wafer, interposer wafer and substrate together forming a protective packaging for the MEMS.

本发明涉及在制造过程中保护临界表面的形成有图案的接触片材以及一种使用形成有图案的接触片材将盖子片粘合到插入物片上以形成盖子/插入物组合或单元的方法，所述接触片材具有华夫饼干状图案的许多脊和许多井，所述盖子/插入物组合或单元可粘合到具有MEM设备的基材上，所述盖子片、插入物片和基材一起形成MEM用的保护性封装。

The device call execute the inputting and taking actions of wafer box, outer rings and inner rings. It can realize the tension controlling during wafer expanding, wafer separating with the metal plate, empty wafer box and waste metal plate discharging.

该装置可完成片盒、内圈和外圈的输入和取片动作，实现扩晶过程张紧力的调节控制、分离晶圆和衬架、排出空片盒和废弃的衬架等。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

与as thin as a wafer相关的网络解释 [注：此内容来源于网络，仅供参考]

as thin as a wafer：极薄(像糯米纸一样薄)

as stupid as an owl 极愚蠢(像猫头鹰一样愚蠢) | as thin as a wafer 极薄(像糯米纸一样薄) | as true as steel 绝对可靠(像钢一样可靠)

as thin as a wafer：极薄

as thin as a lath 骨瘦如柴 | as thin as a wafer 极薄 | as things are 在目前情况下

as thin as a wafer：极薄(像糯米纸一样薄) Hcu中国英语学习网

as stupid as an owl 极愚蠢(像猫头鹰一样愚蠢) Hcu中国英语学习网 | as thin as a wafer 极薄(像糯米纸一样薄) Hcu中国英语学习网 | as true as steel 绝对可靠(像钢一样可靠) Hcu中国英语学习网

as thin as a wafer：极薄(像糯米纸一样薄)的

as stupid as an owl 极愚蠢(像猫头鹰一样愚蠢)的 | as thin as a wafer 极薄(像糯米纸一样薄)的 | as true as steel 绝对可靠(像钢一样可靠) 的

n as thin as a wafer：极薄

n as stupid as an owl 极愚蠢 | n as thin as a wafer 极薄 | n as true as steel 绝对可靠