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The results show that the film will be changed from the amorphous to the polycrystalline, and oriented with (100) plane.

结果表明:薄膜从溅射态的非晶薄膜转化为退火态的微晶薄膜,并以( 100)面择优取向,其 c轴平行于基片。

H-BN thin films were prepared on the (100)-oriented surface of n-Si by r. f. sputtering physical vapor deposition. The field emission characteristics of the BN films were measured in a ultra high vacuum system. It has been found that the field emission characteristics of BN films is affected evidently by substrates temperature.

利用射频磁控溅射方法,真空室中充入高纯N2(99.99%)和高纯Ar(99.99%)的混合气体,在n型(100)Si基底上沈积了六角氮化硼薄膜,在超高真空0^(-7Pa系统中测量了BN薄膜的场发射特性,发现沈积时基底温度对BN薄膜的场发射特性有很大影响。

Therefore, according to the optical thin film theory, we designed the specific pellicle beamsplitter. The incident angle of the pellicle beamsplitter is around 40 degree and 50 degree, which will meet the expectation of our experimental process. We also tried to use it to improve our fabrication process.

因此,我们利用光学薄膜电磁波理论,设计了特制薄膜分光镜,入射角可调在40与50度附近,理论上相当符合干涉微影实验制程上的需求,我们并尝试使用薄膜分光镜作为制程上的改良。

The Ms increases with increasing permalloy thickness t, and the Ms enhancement of 20% is observed for the 40 nm thick permalloy films deposited on (Ni0.82Fe0.18)1-xNbx seed layer , compared to the films deposited on Ta seed layer.

dl-xNbx使坡莫合金薄膜出现了好的*)结构和大晶粒现象,极大的改善了坡莫合金薄膜的微结构,这表明薄膜都有好的陀性能。

The process includes dry etching the protecting layer of AMR film; wet etching the permalloy layer of the AMR film; and dry etching the transition layer of the AMR film.

一种多层膜的干湿结合蚀刻方法,包括:干法刻蚀各向异性磁电阻效应薄膜的保护层;湿法腐蚀各向异性磁电阻效应薄膜的坡莫合金层;干法刻蚀各向异性磁电阻效应薄膜的过渡层。

Compared with PF6P, the attachment of alkyl or alkoxyl groups on phenylene effectively inhibits the formation of fluorenone-based excimers and thus remarkably improves the thermal stability of the spectra.3. Morphology and phase behavior of the polymers substituted with alkyl and alkoxyl groups on phenylene were investigated by differential scanning calorimetry, X-ray diffraction and other techniques.

一方面,未取代的PF6P薄膜和烷氧基取代苯的PF60C6薄膜在空气中退火后都产生了芴酮结构,随退火温度的升高所生成的芴酮结构的含量逐渐增大;另一方面,新的长波发射随退火温度的升高其荧光寿命明显增加,因此确定PF6P空气退火薄膜的长波发射是来源于芴酮的激基缔合物。

The results of experiment indicate that the films have the characteristic as the persistent photoconductivity effect .

实验结果表明,所制备的多晶硅薄膜具有类稳恒光电导效应,而且薄膜的稳恒光电导特性依赖于薄膜的晶化率和晶粒尺寸,随晶化率的增加和晶粒尺寸的增大而增大。

Recently, photoemission spectroscopy has been widely used for the study of quantum well states in films, several models have been developed to explain the relationship of the discrete quantum well states and photoemission spectroscopy.

近年来,光电子谱被广泛应用于薄膜中量子阱态的研究。为解释薄膜中分立的量子阱态和薄膜的光电子谱间的关系,发展了一些理论模型。

Experiment on photosensitivity characteristics of the samples preformed both at room and high temperature (410℃), respectively.

薄膜在室温和较高温度(410℃)下进行光敏特性测试,结果表明,薄膜的制备工艺参量对其光敏特性有较大影响;较高温度下其敏感特性和室温下测试的结果大体一致;在合适条件下制备的薄膜对不同波长的光有较好的敏感特性。

The measurement of 1/f noise in amorphous, microcrystalline and polymorphous silicon film was performanced with a self-design semiconductor system.

研究不同厚度的非晶、微晶和多形硅三种氢化硅薄膜的热导率结果表明微晶硅薄膜的晶化增大了薄膜的热导率。

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此论文详细介绍了系统的需求分析,系统设计和具体实现。

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在经济全球化日益加深的背景下,中国经济不可能做到独善其身。

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