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Some techniques, such as multiprocessor organization, pipeline, virtual memory, ring-protection of main memory, multiple memory modules with address interleaving, cache, RAS and 1/O standard interface, have been employed in the system. A simple form of single-arm-latch has been adopted. Operating system used in HDS-9 is symmetric to each processor.

此机在系统结构上采用多重处理机结构,流水线控制技术,虚拟存储器技术,存储器环状保护技术,存储器多模交叉访问,高速缓冲技术,RAS技术,统一标准接口的I/O系统;在工艺技术方面采用高密度组装技术,用SSI-TTL电路组成单臂门闩触发器系统;在系统软件方面采用匀称或平等的操作系统来处理多重处理机关系。

Some techniques, such as multiprocessor organization, pipeline, virtual memory, ring-protection of main memory, multiple memory modules with address interleaving, cache, RAS and 1/O standard interface , have been employed in the system. A simple form of single-arm-latch has been adopted.

此机在系统结构上采用多重处理机结构,流水线控制技术,虚拟存储器技术,存储器环状保护技术,存储器多模交叉访问,高速缓冲技术,RAS技术,统一标准接口的I/O系统;在工艺技术方面采用高密度组装技术,用SSI-TTL电路组成单臂门闩触发器系统;在系统软件方面采用匀称或平等的操作系统来处理多重处理机关系。

By testing, image lattice point is confirmed as 288×312. The circuit of high sa mpling and buffer storage is used to carry out sampling of 5 M/s.

经试验,确定所采集的图像点阵为288×312点,并采用高速采样缓冲存储电路,由硬件实现5 M/s的高速采样。

The contacting press between the electrode and the pressboard can affect the measurement of moisture in transformer insulated pressboard .

针对绝缘纸板微水分测量中传感器电极与纸板的接触压力问题,利用绝缘纸板微水分介电测量系统,将绝缘纸板置于平板电容传感器中并施加压力,传感器在正弦驱动信号源的作用下,输出的感应信号经调理电路缓冲、滤波,并与驱动信号比较。

The characteristics of FIFO, double-port RAM and ping-pang cache structure were compared. The principle and features of ping-pang cache structure were discussed, and a real ping-pang cache structure was also given which consisted of high-speed, large capacity SRAM and FPGA. For a video processing system, this ping-pang cache structure is easy to interface with AD, DA and DSP.

文中比较了FIFO、双口RAM、乒乓缓存结构三种数据缓存电路的优缺点,讨论了乒乓缓冲控制器的结构和原理,并以高速、大容量的SRAM 以及FPGA器件为基础,设计了一种适应于高速DSP图像处理系统的乒乓缓存结构,其特点是速度快、所需器件少,易于与DSP器件接口。

The model was used in analysis of switching characteristics, snubber circuit, and paralleled operation of the IGBT.

以FF300R12ME3型IGBT为例给出了模型参数,并将模型应用于IGBT的开关特性分析、缓冲吸收电路设计以及IGBT的并联运行分析。

The source diffusion layer and the drain diffusion layer are formed integral with each other, so that the protection circuit on the input end is substantially constituted of one buffer transistor.

源扩散层和漏扩散层相互形成整体,使输入端的保护电路基本上构成一个缓冲晶体管。

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