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缓冲电路

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Input buffer isolates this stage circuit and next stage circuit.

缓冲级起到了该级电路与前级电路的缓冲、隔离作用。

This invention discloses a multi-queue sequence buffer management circuit and a method based on a pipeline applying a pipeline structure including: an arbitration circuit selecting one for process from read, write and distribution buffer requests, a buffer slot state module designing state of the slot requiring operation and queue numbers and assigning idle slots, a buffer slot filter module filtering the slot, a buffer slot filter module filtering the slot states not belonging to the current operation queues nor idle aligned in terms of the head pointer, a queue slot selection module computing continuous idle slot numbers from the slot pointed by the head pointer and refreshing the head pointer and selecting preparing slots, a queue slot prior queuing module refreshing the read pointer and result numbers of the current operation queues with the pointer of the first prepare slots and their numbers which can support multi-queue to share one buffer space, queues can access the buffer in overlap.

本发明公开一种基于流水线的多队列顺序化缓冲管理电路及方法,本发明电路采用流水线结构,包括:仲裁电路,从读、写、分配缓冲请求中选取一路进行处理;缓冲槽口状态设置模块,设置请求操作的槽口状态和队列号,分配空闲槽口;缓冲槽口滤除模块,滤除不属于当前操作队列且非空闲态的槽口状态,按头指针对齐;队列槽口选择模块,计算头指针指向槽口起的连续空闲槽口数并更新头指针,选出预备态的槽口;队列槽口优先排队模块,用第一个预备态槽口的指针和预备态槽口数分别更新当前操作队列的读指针和结果数;本发明可以支持多个队列共享一个缓冲空间,各类指令队列能对缓冲进行交叉访问,并对指令结果的写入读出进行顺序化管理。

The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 V respectively).

钳位缓冲电路被设定在场效应晶体管的额定击穿电压上(分别为600伏特和800伏特)。

With the current mode logic structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.

输入缓冲、驱动放大电路采用电流模电路,满足高速数据传输和放大的能力,输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容,从而使激光驱动芯片工作在10Gb/s时也能达到良好的性能。

In addition to load shaping, snubbers can be used to limit overshoots and/or reduce EMI.

除了负荷整形,缓冲电路,可以被用来限制overshoots和/或降低EMI 。

When we design the IPM circuit ,we should design such main sections:the driving circuit , the buffer and absorption circuit , the protection circuit.

IPM电路设计主要包括驱动电路部分、缓冲吸收电路部分以及保护电路部分。

Setting the buffer circuitcan change the direction of current round the switch, and realize running protection.

设置缓冲电路可以改变器件的开关轨迹,实现运行保护。

Load-shaping snubbers have been used in conjunction with bipolar transistors to lower the trajectory below the second breakdown limit.

负荷整形缓冲电路已被用于与双极晶体管,以降低弹道下面第二个分项限额。

Notice that the values therein contained apply at 125℃ and that load-shaping snubbers are not necessary, as long as the switching trajectory is confined within the turn-off SOA.

通知指出,价值观,因此包含适用于125 ℃和负荷整形缓冲电路是没有必要,只要把开关轨迹是局限于之交小康国家海洋局。

Some circuits use resonant, quasi-resonant, and/or multi-resonant techniques. However, voltage or current stresses in these converters are higher and require the devices of higher VA rating. Some circuits use passive snubbers or active clamp techniques. However these converters become more complicate. Phase-shift ZVS technique has been used in bidirectional DC/DC converters since it can realize ZVS for all switches without auxiliary switches.

谐振、准谐振或多谐振技术方案,变换器的电压电流应力较高,变频控制增加了滤波器设计的难度;能量缓冲吸收电路或有源钳位电路方案,由于需要增加多个额外辅助元件,增加了变换器的复杂性;全桥相移技术方案,由于主电路无需增加额外元件,只需利用相移控制,即可实现软开关,因此引起关注。

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