栅电流

The purpose of the enhanced fully differential foldedcascode op-amp topology presented in the paper is to modify the standard topology, shown in Fig. 1, so that the choice of bias current for M5 , M6 , M9, M10, M13, and M14 does not affect the slew rate of the op amp.

本文介绍的性能改进的全差分折叠共源共栅运算放大器拓扑结构的目的是修改图1所示的标准拓扑结构，使得M5、M6、M9、M10、M13和M14偏置电流的选择不影响运算放大器的摆率。

Earlier in the heyday of driving MPU clock frequencies ever higher, transistor guru and fellow Tahir Ghani declared that gate leakage current densities in the neighborhood of 100 A/cm2 would be acceptable Ref.

早在微处理器的频率大战如火如荼的时候，晶体管领域的导师，研究员Tahir Ghani曾宣称栅泄漏电流密度在100A/cm2左右是可以接受的。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

Calculated results showed that the current distribution over three--dimensional networks is more uniform than that over general grid and plate of lead--acid battery.

用有限元方法分析了铅酸蓄电池用三维网络碳化硅板栅和极板内电流的分布。

An N-channel VDMOS I - V curve is measured after X-ray radiation under condition of different power dissipation. It is found that the property of new interface traps induced by X-ray radiation of self-annealing VDMOS sample does not conform to existing theory reasonably well.

利用X射线对一种N沟VDMOS在不同的负载功率下进行了辐射试验，采用电流-电压测试方法发现这种H2-O2氧化栅介质VDMOS样品存在自退火效应时，新增界面陷阱特性与通常的理论不能够很好地一致。

In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.

为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。

With the current mode logic structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.

输入缓冲、驱动放大电路采用电流模电路，满足高速数据传输和放大的能力，输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容，从而使激光驱动芯片工作在10Gb/s时也能达到良好的性能。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

On the basis of simulation, the effects of the thickness of gate oxide and the dopping dose in the LDD region on the the electric field are studied.

论文采取对称的方法研究了漏电压VD和栅电压VG对GIDL隧穿电流的不同影响。

When the operator presses the normally closed momentary-contact pushbutton switch, S1, current flows through R1 and R2 to gro

当操作者按下常闭瞬时接触按钮开关S1，电流通过R1和R2流到地，不断提高栅源极电压到足够打开Q1和为IC1和微处理器供能。

Cynanchum Lingtai apricot production in the average weight 65 grams, the brightly-colored fruit, juicy rich, sweet-sour taste, sweet from the nucleolus, when the late Qing Dynasty famous Shaanxi, Gansu provinces, the Qing imperial court Tongzhi tribute for years.

灵台生产的牛心杏平均单果重65克，果实色泽鲜艳，汁多味浓，甜酸适口，离核仁甜，清末时就驰名陕、甘两省，清同治年间曾为朝廷贡品。

Chenopodium album,Solanum nigrum, and Amaranthus retroflexus were very susceptible to the herbicides. Polygonum persicaria and Abutilon theophrasti were relatively less susceptible to the herbicides, and Lycopersicon esculentum was not susceptible to it. The relationship between reduction rates of weed biomass and PPM values of weed leaves 2,4, and 6 days after treatment was established.

供试的6种杂草对该混剂的敏感性存在显著差异：红心藜Chenopodium album、龙葵Solanum nigrum和反枝苋Amaranthus retroflexus对该混剂最敏感，ED90值分别为47.65、71.67和29.17g/hm2；春蓼Polygonum persicaria和苘麻Abutilon theophrasti敏感，ED90值分别为96.91、114.20g/hm2；而番茄不敏感。