势垒

GaN ; Schottky diode ; thin surface barrier model ; thermion field emission

氮化镓；肖特基二极管；表面势垒减薄模型；热电子场发射

Measurements of the forward I-V characteristics of these diodes have shown that thermionic emission current is the dominant current conduction mechanism for these Schottky contacts.

对研制的器件特性进行了比较分析，I-V特性测量说明Pt／6H-SiC肖特基二极管有较好的整流特性，热电子发射是其主要的输运机理，理想因子为1.23，肖特基势垒高度为1.03eV，开启电压约为0.5V。

The impact of low vacuum thermal annealing on the current-voltage characterization of devices has been studied based on thermionic emission theory.

用肖特基势垒的热电子发射理论研究了低真空下不同热退火条件对器件伏安特性的影响。

Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.

本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。

On the basis of analysis of developing background and theory of thermoelectric graded materials, p-type (Bi1-0.85Sb0.85)Te3 and PbTe two segments thermoelectrical graded materials with different barriers were fabricated by conventional hot-pressing process.

在分析了热电材料的发展背景和研究理论的基础上，采用热压法制备出单体和双层具有不同扩散势垒的1-0.850.8与PbTe体系二元梯度热电材料。

We get the most possible pathway by the different method,the result is i,theW ndnd l,We= ghare~~nd l,We= ghareIts coincide with the result of exPeriment.

我们用半经验的pm3方法对其可能转换的每一条途径进行了模拟计算，分析能量势垒的高低，得到了最可能的途径。

Moreover,the effects of the thicknesses and heights of the two barriers on the TMR effect are discussed,respectively.

在计算中还对双势垒的高度和厚度对隧穿磁电阻效应的影响分别进行了讨论。

P. P. Raevski〓, and pointed that this polarization at grain boundary between WO〓 monoclinic and triclinic phases causes a modification to Schottky barrier is origin of nonlinear electrical characteristic of tungsten oxide polycrystalline ceramics.

Raevski〓的铁电半导体非线性电输运理论模型的框架内，我们重点考虑了铁电极化对WO〓陶瓷非线性电输运特性的影响，指出由于三斜和单斜晶相的共存，在其晶界处存在的电极化可以对Schottky势垒产生一种修正，是导致出现压敏现象的一个重要因素。

In this paper, it is shown that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers.

本文证明这一反常现象与该模型对低势垒电流的错误计算有关。

The center of mass motion of the cold atoms exhibits wave nature of quantum mechanics.

由于这种量子力学波动性，粒子能够从一定的概率隧穿过比其能量更高的势垒。

Since historical times,England ,where the early inhabitants were Celts, has been conquered three times .

从有历史以来，英国，在此地早期居住的是凯尔特人，已经被征服了三次。

Bluetooth OBEX File Transfer Enables the sending and receiving of files on your phone via Bluetooth.

蓝牙OBEX文件移动允许经过蓝牙传送和接受文件。。。。