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This paper introduces the latest progress of PtSi Schottky-barrier infrared focal plane arrays technology,and analyses the problem existing in the research in China.

介绍了PtSi肖特基势垒红外焦平面阵列技术的最新进展,分析了国内研究中存在的问题,并指出了今后的发展方向。

LaNi〓 can be easily activated at room temperature and activated LaNi〓 possesses catalysing effect for the dissociation of H〓, which greatly reduces the energy barrier for dissociation of H〓. Hydrogen passed through LaNi〓 particles, then diffused into the crystal lattices of V、Nb and TiFe alloy and formed hydrogenate.

LaNi〓粒子在室温下很容易活化,活化后的LaNi〓具有了氢分子分解为氢原子的催化作用,降低了氢分子分解为氢原子所必须克服的势垒,氢通过LaNi〓粒子而进入V、Nb、TiFe合金晶格中,形成金属氢化物。

The most preferable substituents are methyl groups for positions R1 and/or R2, due to the existence of a hyperconjugation effect between the p z orbital of the central carbon atom and one of the C—H bond orbitals in methyl group.

当R1, R2位置是甲基时,由于碳原子的p z 轨道与甲基的一个C—H键轨道间存在强的超共轭效应,从而可以较大程度地降低α-氢转移反应的势垒

The n-type gate modulation could be explained by the bending effect of valence band in the Schottky-barrier junction. The photoconductive diode and optical switch behavior was demonstrated for the first time from a C/CNX multi-walled nanotube junction with a Schottky barrier. Theconductivity of nanotube can be reversibly changed by 3 to 4 orders of magnitude when the 5 mW cm2 white lights was turned on and off.

器件原理是栅极静电场调节碳纳米管和CNx纳米管间的Schottky势垒的高度和宽度,从而影响载流子的传输。8首次利用单根CN万/C纳米管作为半导体材料制备了Schottky光导二极管和光开关。

The critical current density depends exponentially on magnetic field, which indicates that there is a logarithmic potential well U in Bi2212 crystals.

同时发现电流密度与磁场间存在指数关系,表明样品中的钉扎势垒与电流密度之间存在对数关系。

C on the biased voltages of the inorganic/organic static induction transistor through a normalized approach in the low-current regime is presented.

本文利用归一化方法归纳出无机和有机型静电感应晶体管SIT/OSIT在低电流区沟道势垒高度Φc与所加偏压的指数关系Φc =η*VGSexp+VSbi。

Matal films such as aluminum and silicides are used to form low-resistance interconnections, ohmic contacts to n+,p+,and polysilicon layers,and rectifying metal-semiconductor barriers.

金属片如铝和硅化合物被用来形成低电阻互连, n+,p+的欧姆接,触多晶硅层,并整顿金属-半导体的势垒

According to two_level model of atom, we systematically analyze the quantum reflection and transmission of the vector atomic matter wave with internal structures propagating through a laser beam.

特别是对"粒子隧穿一个势垒是否需要时间"或者"量子隧穿时间是多长"这一问题[14]的讨论在量子力学基本问题研究中一直占有相当重要的地位。

The reaction barrier will be lowered by the substituents that delocalize the unpair electron in Pz orbital of the central carbon atom.

当R^1,R^2位置是甲基时,由于碳原子的pz轨道与甲基的一个C—H键轨道间存在强的超共轭效应,从而可以较大程度地降低α-氢转移反应的势垒

This article analyzes thermodynamically the potential barrier and the factors affecting it in the process of phase separation.

从热力学角度分析了分相过程中存在的势垒及其影响因素。

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