查询词典 wide gap

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

High-frequency and high power electronic or microwave devices, because of their excellent properties such as wide band gap, high electron saturation drift velocity, low dielectric constant, high thermal conductivity, good chemical and thermal stability, and so on.

同时由于GaN基材料具有电子漂移饱和速度高、介电常数小、导热性能好、化学和热稳定性好等特点，也非常适合于制作高温、高频及大功率电子器件。

In this paper, we report the progress on energy band structure studies of wide-band-gap semiconductors in NSRL.

以GaN、SiC和ZnO为代表的宽带隙半导体材料，是继Si和GaAs之后的第三代半导体。

Our precision, stability, and efficient design principles, honesty, responsibility and innovation as a management philosophy, professional manufacture of various types of cutting machine, to help end machine, setting machine manufacturers, including precision cutting machine and hydraulic four-post surface setting machine boots initiative for our company to fill the gap both within and outside the province for the cutting machine industry leader in a wide range of products the company has applied for patents for inventions, products widely used in the footwear industry, packaging industry, electronic industry, automobile industry, leather industry, bags industry, silk flowers, toys and so on.

我公司以精密、稳定、高效为设计原则，以诚信、责任创新为经营理念，专业制造各类裁断机、结帮机、定型机的厂家，其中精密四柱裁断机和油压靴面定型机为我公司首创，填补了省内外空白，为裁断机行业的领导者，公司多项产品已经申请发明专利，产品广泛适用于制鞋业、包装业、电子业、汽车工业、皮具业、箱包业、丝花业、玩具业等。

From the very first there was too wide a gap between us.

从一开始，你我之间的鸿沟就太大了。

An MHP based thermal vacuum sensor was designed in the supporting beams of 65 μm long and 21 μm wide, and the gas gap below micro hotplate of 0.5 μm. The micro sensor was fabricated successfully with surface micromachining technology.

设计了一种边长为93μm、四臂支撑的方形微热板结构的电阻真空传感器，支撑桥长65μm、宽21μm，微热板与衬底之间的气隙高度为0.5μm；采用表面微机械加工技术成功实现了该传感器的加工。

ZnO is a wide band-gap semiconductor with the high exciton binding energy of 60 meV.

ZnO的激子束缚能高达60meV，具有优良的光学性质。

Zinc oxide is an interesting wide band gap (3.3 eV) semiconductor material with a binding energy of 60 meV.

氧化锌是一种重要的宽禁带隙（3.3 eV）半导体材料，它的激子束缚能高达60 meV。

ZnO is a n-type semiconductor with wide band gap of 3.2 eV.

ZnO是一种n型的宽禁带半导体材料，带隙3.2 eV。

Zinc Oxide is an II-VI n-type compound semiconductor with direct wide-band gap, and a hexagonal wurtzite structure.

氧化锌作为一种多功能的Ⅱ～Ⅵ族宽禁带化合物n型半导体材料，具有六方纤锌矿结构。

If you are unfortunate enough to the lovelorn, please tell me, I will help you out, really, please contact me!

如果你不幸失恋了，请告诉我，我会帮助你摆脱困境，真的，请联系我啦！

China's plan to cut energy intensity by 20 percent and pollutant discharges by 10 percent between 2006 and 2010 is a case in point.

中国计划在2006年到2010间降低20%的能源强度和减少10%的主要污染物排放，就是一个这样的例子。