查询词典 voltage

Maintain deflector if the size of the same voltage, the voltage change is accelerating, we can see a very accelerated voltage reduce, electron beam deflection angle instead of increasing, it is because of low accelerating voltage, the electron velocity smaller horizontal direction, electronic deflection plates in the field of the role of the extended time, the angle of deflection increases .

如果保持偏转板的电压大小不变，改变加速极的电压，可以看到加速极的电压减小，则电子束偏转的角度反而增大，这是因为加速极电压低，则电子的水平方向速度变小，电子在偏转板中受电场力作用的时间加长，所以偏转的角度增大。

As a DC/DC basic structure is adopted, the operational amplifier leads the non inverting input end voltage of the error amplifier to follow the input voltage linearly, thus realizing the linear following relation between the output voltage and the input voltage.

由于采用DC/DC的基础结构，增加运算放大器使误差放大器的同相输入端电压与输入电压线性跟随，从而实现输出电压与输入电压的线性跟随关系。

Main features:- Hole spacing 2.25mm-operating voltage: 4.5 V to 24 V-switching offset compensation at 62Hz under - over-voltage Protection - VDD-pin Reverse voltage protection - Short circuit protection open-drain output is hot off - working magnetic field range: DC to 10kHz-output goes low with magnetic south pole contacts marked on the package side, while the higher magnetic flux density and area of S1, As S2-all temperature and supply voltage range magnetic parameters on-chip temperature compensation circuitry of the minimum drift - EMC meet DIN40839.

主要特点：–霍尔片间距2.25mm–工作电压： 4.5 V 至 24 V–开关偏移补偿在62Hz下–过电压保护– VDD-pin反向电压保护–短路保护漏极开路输出被热关断–工作磁场范围：直流到10kHz–输出变低用磁场南极接触封装上有标记边，而更高磁通量密度面积S1，如同S2–全温度和供电电压范围下磁参数的片上温度补偿电路的最小漂移– EMC适应DIN40839。

In the proposed device to remedy the defect that overhigh withstand voltage of thyristors used in converter are needed due to the overhigh DC link voltage, a method to control DC link voltage is put forward, that is, a special control logic for full-controllable switching elements is designed to make them equivalent to half-controllable switching elements which are naturally turned on and turned off by triggering, then connecting such a half-controllable switching element in series with DC link the defect of overhigh DC link voltage is effectively solved.

为了克服该装置直流母线电压过高，因而对逆变器开关管耐压要求过高的缺点，提出一种对直流母线电压进行控制的方法。对全控型开关器件设计一种特殊的控制逻辑，使其等效为一个自然导通、触发关断的半控型开关器件，将该半控型开关串联在直流母线上，有效解决了直流母线电压过高的问题。

First of all the differences between photoelectric current / voltage transformer elements in HV and UHV switchgear assembly and independent electric device of conventional open porcelain knob photoelectric current / voltage transformer are described in this paper,then the photoelectric current / voltage transformer elements in HV and UHV switchgear assembly are classified,and the working principle and technical performances of photoelectric current / voltage transformer elements in 500 kV switchgear assembly abroad are introduced in detail.

首先论述了高压和超高压组合电器中光电式电流/电压互感器元件和常规敞开瓷柱式光电电流/电压互感器独立电气设备在概念上的区别，然后对组合电器中光电式电流/电压互感器元件进行了分类。并详细介绍了国外550kV 超高压组合电器中光电式电流/电压互感器元件的工作原理及技术特性。对 ABB 公司、阿尔斯通公司、三菱公司、西门子公司等生产的245～550kV 户外超高压新型组合电器进行了较详尽地介绍和分析，主要是：①基本结构及特点；②主要技术参数

Maximum expected voltage unbalance at PCC during normal operation of the grid: Voltage unbalance defined as relative value of negative phase voltage component, expressed in percentage of positive voltage component.

电网正常运行电网接入点预计的最大电压不对称：不对称电压的定义为负相电压分量的相对值，用正电压分量的百分数来表示。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

In order to improve the sensitivity of sensors to improve sensor linearity, linear range of the sensor increases, the design of the two-phase反串coil, two secondary coil of the opposite polarity voltage, LVDT output voltage is two times level difference between the voltage coil, the output voltage and core values of the linear relationship between displacement.

为了提高传感器的灵敏度，改善传感器的线性度、增大传感器的线性范围，设计时将两个线圈反串相接、两个次级线圈的电压极性相反，LVDT输出的电压是两个次级线圈的电压之差，这个输出的电压值与铁心的位移量成线性关系。

Because a bulk smoothing capacitor is usually installed on the DC side of many AC to DC converters, the characteristics of harmonic loads will be influenced by this capacitor. Nowadays, shunt active power filters can't reduce harmonics effectively for this voltage type harmonic-producing load. Therefore, a series active power filter is designed to meet the requirements of voltage-sourced harmonic loads. Both source current and load voltage are detected in order to reach the compensation voltage for the SAPF.

由於许多交直流电源转换器均在直流端并联一直流电容以作为稳压之用，此大电容将造成负载谐波特性的改变；此类谐波源负载，如果使用现今常见的并联型主动式电力滤波器并不能很有效解决此类谐波问题；因此本文将采用串联型主动式电力滤波器，并配合同时量测电源电流及负载电压的混合式控制模式，即可有效解决此类谐波问题。

Next, in a third interval, the voltage is lowered in a short time from the second voltage to a third voltage no more than the starting voltage.

接着，在第三区间中，电压在短时间内从第二电压下降到比启动电压低的第三电压。

Chrysanthemum of 10 thousand birthday is lax to edaphic requirement, with the arenaceous qualitative loam with fecund, good drainage had better.

万寿菊对土壤要求不严，以肥沃。排水良好的砂质壤土为好。

He unstepped the mast and furled the sail and tied it.

他拔下桅杆，把帆卷起，系住。