查询词典 threshold voltage

This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument.

这个峰值电压设置为阈值电压，用来计算仪器的电压响应曲线。

This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice.

所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量，并已实用化。

Furthermore, the threshold voltage and subthreshold swing shift of a-Si:H TFT under DC operation is discussed and measured.DC voltage stress causes a constant Vt shift ,but subthreshold swing isn't change much.

另外，考量元件稳定度的加速实验，尝试分析偏压时间对於临界电压偏移量以及次临界摆幅的影响，结果显示长时间的直流偏压只会对临界电压偏移量造成影响，对於次临界摆幅的影响很小。

The output voltage and the detector threshold voltage can be set individually for each IC by laser trimming.

输出电压和阈值电压检测器可以设置为每个单独的激光微调集成电路。

The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm, which are much lower than those of aligned nanowire arrays.

结果显示，非取向生长的ZnO纳米线薄膜场发射的开启电压和阈值电压所对应的场强分别为4.7和7.6V/μm，场增强因子达10^3量级，具有较阵列生长的ZnO纳米线更为优异的场发射能力。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

A novel MOS-only voltage reference is presented, which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation.

提出了一种新的纯MOS结构的基准电压源，它利用pMOS和nMOS的阈值电压差来抵消工艺偏差，提高了基准的精度。

A novel MOS-only voltage reference is presented, which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation.

提出了一种新的纯MOS结构的基准电压源，它利用PMOS和nMOS的阈值电压差米抵消工艺偏差，提高了基准的精度。

This method can obtain the threshold voltage,mobility of small-dimensional devices and velocity saturation factor, while the resultsobtained by this method includes the short, narrow channel effects, the degradation ofchannel mobility due to gate voltage, velocity saturation effect and the seriesresistance of source terminal.

该方法可提取出小尺寸MOS器件阈值电压、迁移率和速度饱和因子，从而反映出小尺寸器件的短、窄沟效应，迁移率退化效应，速度饱和效应及源漏电阻对器件特性的影响。

The devices can operate at a supply voltage 110mV above the output voltage under specified load conditions, except the REF3312 which requires a minimum supply voltage of 1.8V.

设备可以在高于输出电压低于规定负载的110MV下操作，除REF3312，因为REF3312要求1.8V的最低电压。

I was just taking her hand, to help her out of a car, and I knew it.

我只是握着她的手，扶她下车，但我知道这一切。

China and South Korea have excoriated Japan over its approval of new school books which they say whitewash the atrocities committed during Japanese occupation, and anti-Japanese protests have been held in Chinese cities. The lingering bitterness over Japan's past imperialism still threatens to mar relations between the big East Asian powers

中国和韩国强烈谴责日本通过新的中学历史教科书，他们认为这一教科书掩盖了日本在其占领期间所犯下的残酷暴行，反日抗议活动在中国数座城市发生，历史上日本帝国主义制造的痛楚无法被忘却，这有可能破坏东亚强国间的关系。