查询词典 reverse current

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse

当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.

当二极管反向偏置时，仅有很小的，可忽略的漏电流流过，除非是达到反向击穿电压。

This article is currently China's home appliance reverse logistics developments do preliminary research and propose appropriate for the current situation of reverse logistics model.

本文将对目前中国废旧家电逆向物流的发展情况做初步的研究并且提出适合当前形势的逆向物流模式。

We could reverse the current and reverse the monster -making process!

我们能将电流反转，而把鬼怪制造过程倒转过来！

However, must clearly recognize that the current stock is still in the downward trend, the downward trend of the whole without any tendency to reverse, the most obvious short average surface now under pressure, on the 5th line to become difficult to break, along the "line of defense"; BOLL channel fully operational in the downlink channel, and there are no signs bottomed; and major trends TRIX and MACD indicators are in a strong explore the stage; OBV indicators downlink unable to fully demonstrate that the market inside and short-term to maintain the disadvantaged pattern indexes to reverse the trend away from the whole is still too early!

但是，必须清醒地认识到，目前的股价仍然处于下降趋势，但整体下降的趋势没有任何扭转的趋势，最明显地表现在短，平均压力下，五日线成为难以打破，沿防御&线&；波尔渠道充分的下行信道的业务，而且没有迹象见底；及基质的主要趋势和MACD的指标是一个强大的探索阶段，成交量净额指标下行无法充分表明，内部和短期市场，维持弱势格局指数扭转这一趋势远离整体还为时尚早！

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟，优化了CI-LIGBT的阳极区结构，指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键，而n〓阳极区结深相对p〓阳极区结深越大，器件的限流能力越强；分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响，得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优，其导通压降仅比普通LIGBT高0.6V；分析了温度对LIGBT闩锁性能的影响，表明CI-LIGBT即使在450K的高温下也不会闩锁，尤其适用于高温工作环境。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The most common ratio using current asset and current-liability data is the current ratio, which is current assets divided by current liabilities.

利用流动资产和流动负债数据计算的最常见的比率是流动比率，即流动资产除以流动负债。

Backset current area, the important factor of burner performance was discussed on the basis of carrying on numerical simulation to the cement kiln with three-channel burner by the model of. RNG k-ε. The model that backset current area was divided into center backset current area, interior backset current area, and other backset current area was compared in three-dimensional condition.

在采用重整化群κ-ε模型对水泥窑用多通道燃烧器进行数值模拟的基础上，针对影响燃烧器性能的重要指标－回流区进行讨论，将三维条件下燃烧器的流场分布与传统燃烧器流场进行劝比，提出了三维条件下燃烧器回流区分为中心回流区、内回流区、外回流区3个回流区的分布模型，并分析了影响回流区的直流风和旋流风2个重要因素。

The instantaneous current capacity may demonstrate through the nixietube, provides the craft data reference for the operator.8031If the system the setting value carries on again the current capacity actual value the comparison, calculates the control quantity after the PID adjustment operation vi, again transforms into the electric current output signal, after but controls the silicon-controlled rectifier after the enlargement the breakover angle, the realization adjusts the slippery difference electrical machinery magnetic clutch exciting current the function, thus the adjustment implementing agency slippery difference electrical machinery rotational speed, causes to transport on the leather belt the material current capacity to stabilize as far as possible nearby the setting value, and has the good static target and the dynamic performance.

瞬间流量可通过数码管显示出来，为操作人员提供工艺数据参考。8031系统再将流量实际值与其设定值进行比较，经PID调节运算后计算出控制量vi，再转换为电流输出信号，而后经放大去控制可控硅的导通角，实现调节滑差电机电磁离合器励磁电流的功能，从而调节执行机构滑差电机的转速，使输送皮带上的物料流量尽可能稳定在设定值附近，并具有良好的静态指标和动态性能。问题补充：希望大家不要给机器翻译的答案，我想要人工翻译的，谢谢大家了

Fostering the concept of multi-culture firmly and mastering the development of advanced culture correctly are conductive to resisting terrorism, separatism of nationalities and ultraism of religion, which is of great academic theoretical, immediate and profound historical si...

牢固树立多元文化的理念和正确把握先进文化的发展方向，有助于在世界范围内自觉地抵制恐怖主义，民族分裂主义和宗教极端主义。不仅具有重大的学术理论意义，而且也具有重大的现实意义和深远的历史意义。

But if anyone walks in the night, he stumbles, because the light is not in him.

11：10 若在黑夜行走，就必碰跌，因为那光不在他里面。