查询词典 normalizing device

Instrument calibration will be put in the stage, adjusting the circular bubble center and leveling instrument, the instrument within the scope of compensation, tilt apparatus (even if the equipment from high to low before or after the high-low) at this time if the device reticle cross Sgro at or below the standard target cross-wire, you can compensate by adjusting the device is hanging below the two long screws to correct until the adjustment to the permitted range.

将仪器放于校正台上，调整圆水泡居中并将仪器整平，在仪器补偿范围内，倾斜仪器（即使仪器前高后低或后高前低），此时若仪器分划板十字丝高于或低于标准目标十字丝，则可通过调整补偿器正下方两悬垂的长螺钉来校正，直至调整到允许范围之内。

Three types of geometry layout: line, ring and square gates, were designed and analyzed. The field-plate design was also used in the three kinds of device layouts to improve the device performance at high voltages.

我们设计了三种不同几何结构分别为：线形结构、环形结构以及矩形结构的元件，从当中分析不同几何结构对於元件特性的影响。

Electric bicycle and electric motorcycle is different, the electric bike is riding the line device, the electrical power good smaller, when the Su-not more than 15 kmh, the electric motor power the larger motorcycle 500W or greater, about 50 kmh per hour, there is no cycling device can be the road for electric bikes, electric motorcycles can not be listed on the road, and the technology was not, a low safety factor, it is recommended not to buy Electric Motorcycle.

电动自行车和电动摩托车是有区别的，电动自行车是有踏行装置的，电机功率好较小，时素不能超过15公里每小时，电动摩托车电机功率较大500W或更大，时速50公里每小时左右，没有骑行装置，电动自行车可以上路，电动摩托车现在还不能挂牌上路，而且技术不成熟，安全系数低，建议不要买电动摩托车。

In the manufacturing of the lock plate as an important part placed in the crossing support device, we solved the problem of die breaking by using of stroke protecting device.

在交叉支撑装置中的另一个重要零件——锁紧板的制造工艺中，采用了冲头保护装置，解决了失稳折断问题。

Secondly, whole-chip ESD protection net is put forward. Input protection circuits, output protection circuits and circuits between high-voltage ground and low-voltage ground are decided on the base of structure and process of PDP drive chip. Moreover, the design of low-voltage VDD-to-VSS ESD protection circuits is detailed and the circuit is simulated with HSpice. Finally, the characteristic of high-voltage device after avalanche breakdown is simulated and analyzed with Tuprem-4 and MEDICI, and it is concluded that high-voltage device can stand high voltage and large current, so the low-voltage VDD-to-VSS ESD protection circuits can be applied to high-voltage VDD-to-VSS ESD protection.

随后提出PDP驱动芯片全芯片ESD保护网络的方案，并根据PDP驱动芯片的结构和制造工艺，介绍了输入部分、输出部分及高低压接口部分的ESD保护电路，然后重点分析了低压电源和地之间ESD保护电路的设计并用Hspice进行了模拟，最后使用Tuprem-4和MEDICI模拟了高压器件在雪崩击穿之后的电压电流和电场分布特性，得出高压器件本身可以承受一定的ESD脉冲，从而将低压电源和地之间的ESD保护电路应用到高压电源和地之间。

This thesis deals with oil-water flow rate measurement using a venturi and develops a differential pressure-based two-phase flow rate measurement model, which does a terrific job with the use of a water fraction device. Meanwhile, Coriolis flow rate meter is also studied in the oil-water two-phase flow measurement and a SVM-based single-phase flow rate prediction method is proposed, realizing the prediction of single-phase flow rates. To overcome the disadvantages of both venturi and Coriolis flow meters, a double parameter measurement method is put forward, which combines the two meters and solves the problem of oil-water flow rate measurement. Last but not least, on the basis of the study of two-phase flow, a device for the separation of gas and liquid is designed and realizes the flow rate measurement of three-phase flow as oil, gas and water.

本文对文丘里管测量油水两相流流量进行了研究，建立了基于差压法的两相流流量测量模型，如果与含水率计相结合，可以较好的实现油水两相流的流量测量；同时研究了Coriolis流量计在油水两相流流量测量中的应用，提出了基于SVM的油水两相流分相流量预测方法，实现了油水分相质量流量的预测；针对文丘里管和Coriolis测量油水两相流存在的问题，提出了文丘里管和Coriolis流量计相结合的双参数测量方法，并实现了油水两相流的流量测量；最后，在对油水两相流研究的基础上，设计完成了一种气液分离装置，实现了油气水三相流的流量测量。

Experiment results show that the mechanical-thermal noise coming from the structure and the mechanical performance of a heavily doped Si membrane is the main noise of the device, which can be reduced by minishing the membrane area and extending the membrane thickness to increase the mechanical resonant frequency of the membrane, but should be at the price of reducing the sensitivity of the device.

Hz(上标 1/2)/W。实验表明，器件的噪声中热机械噪声为主要噪声源，大小主要由浓硼硅薄膜的机械性能和器件结构决定，可以通过增大薄膜厚度，减小薄膜面积，从而增加薄膜的特征频率的方法来减小器件受外界振动的影响，但以降低器件的灵敏度为代价。

The network computer, also known as the Internet toaster, Internet appliance , Internet device -- and other more or less flattering monikers -- is the low cost, no maintenance desktop device intended to allow users to effortlessly connect to the Internet and network resources.

网络计算机，也叫Internet&烤面包器&、Internet装置、Internet设备以及其它多少有些讨人喜欢的绰号，是一种价格低廉、无需维护的台式装置，设想让用户不费力气就能接到Internet网和网络资源上。

At very fast 100 us and low +/- 9 V P/E, good memory device integrity of 2.8 V initial memory window and large ten-year extrapolated retention of 1.8 V at 85oC or 1.5 V at 125oC are obtained in SiO2/Hf0.3N0.2O0.5/HfLaON/TaN MONOS device. Such excellent 85~125oC retention with small decay rate, at only 2.9 nm thin tunnel SiO2, is possible by tuning Hf0.3N0.2O0.5 trap energy deep into Si forbidden bandgap close to midgap.

在快速(100毫秒)和低电压(9伏)的操作条件之下，可得到2.8伏的记忆视窗；在85oC 和125oC环境下由外插法所得的十年资料储存能力，其记忆视窗仍有1.8伏和1.5伏，由於我们调整高含氮量氮氧化铪的捕陷能阶深入至靠近矽中间能带的禁止能带中，才能在仅2.9奈米穿遂氧化层的MONOS元件中，拥有如此突出的资料储存能力。

Furthermore, because of the device excellent transistors performance and N-shaped NDR phenomenon, the studied device provides a good potential for linear, analog amplification, and logic circuit applications.

所研究的元件具有良好的崩溃电压、转导值及高线性度，以提供讯号放大和逻辑电路上之应用。

Don not attempt to do something which you can not to do.

不要企图做那些办不到的事情。

The expression of CTGF and TNF-αweredetected by immunochemistry and the number of Clara Cells was calculated.

光镜下观察肺组织的病理变化，采用免疫组化染色观察肺组织中结缔组织生长因子和肿瘤坏死因子-α的表达和Clara细胞的数量。