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nitride process相关的网络例句

查询词典 nitride process

与 nitride process 相关的网络例句 [注:此内容来源于网络,仅供参考]

Silicon nitride passivation layer existed in standard CMOS process is used as hydrogenous ions sensitive layer, ISFET with multi-layer floating electrode structure works as the sensing unit.

介绍了一种基于上华0.6μmCMOS工艺实现的pH值传感器集成电路的设计和研究,它采用标准CMOS工艺提供的Si3N4钝化层作为氢离子敏感层,并以多层浮栅结构的ISFET作为传感单元。

Because the properties of the hexagonal boron nitride particles are much different from those of the yttria powders,resulting in some problems in process of preparing the hBN shell mould .

在型壳制备过程中除了使用氮化硼作为面层造型材料外,用钇溶胶作为粘结剂,同时通过加入少量的氧化钇来改善氮化硼基复合型壳的性能。

A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant gas composition.

要約 一种在多层结构的氮化硅层中各向异性地腐蚀沟槽的工艺和腐蚀剂气体组分。

For airbridge fabrication, tungsten nitride was chosen as the diffusion barrier for copper-airbridged pseudomorphic high electron mobility transistor due to its compatibility with the conventional airbridge process.

在本实验中,空气桥制作上使用氮化钨作为铜导线高电子迁移率电晶体之扩散障碍层,这是由於氮化钨和传统制程上有高度的相容性。

SII9030CTU Pinout: International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching rated Low package inductance Fast intrinsic Rectifier

SII9030CTU引脚说明:封装符合JEDEC国际标准的TO - 264机管局,环氧树脂符合UL 94 V - 0级,易燃性分类miniBLOC,与氮化铝隔离低的RDSHDMOSTM过程中细胞结构坚固的多晶硅栅极钳位感应开关的额定低封装电感快速内在整流器

The process involved the preparation of vanadium carbide which can be prepared from V 2O 3 by vacuum carbon reduction and then being nitrified to vanadium nitride by nitrogen gas.

以V2 O3为原料,采用真空还原方法制备出碳化钒,生成的碳化钒直接进行渗氮制备出碳氮化钒。

The process involved the preparation of vanadium carbide which can be prepared from V 2O 3 by vacuum carbon reduction and then being nitrified to vanadium nitride by nitrogen gas.

利用扫描电镜、透射电镜和X射线能量分散谱仪对高钒高速钢中合金碳化物———碳化钒的精细结构及微区成分进行分析。

There is an activation process for passivated alumina supported molybdenum nitride and carbides catalysts at the initial stage of hydrazine decomposition.

在肼分解反应初期,钝化态的氮化钼和碳化钼催化剂有一个活化的过程,随着启动次数的增加,催化剂的初活性逐渐提高,最后达到稳定。

Ceramic bearings can produce oxidation-ho, silicon carbide, silicon nitride and so on, diameter from 3mm-50mm, precision Machinable P0, P6, P5 level; its performance characteristics are: high temperature, oil-free self-lubricating, acid, alkali and salt corrosion , wear resistance, low noise, insulating diamagnetic, since high-speed operation; metal nano-ceramic bearing its production process for a new generation of high content of nano-particles in the heat and pressure infiltration of metal surface is activated to fill the cracks and pits the metal so that 3-5 micron metal surface is more smooth solid surface, greatly reduce the friction, improve Chennai base metals, and greatly increased the life span of bearings, and its characteristics are: long life (as an ordinary stainless steel bearings 2 -- 10-fold), low noise (as an ordinary stainless steel bearings, 70%), wear-resisting, acid, alkali, salt corrosion, high temperature, load large; ceramic bearing and metal nano-ceramic bearing design and development to meet the needs of the market for high-speed, low - noise, high load, the demand for corrosion-resistant; Machinery Production Department to produce aircraft rod end joint bearing, linear guide bearings, the fuel tank of earrings, plastic bearing, non-standard side bearing components, glass door hardware, such as high-precision control products; and provide CNC machining.

陶瓷轴承可生产氧化镐、碳化硅、氮化硅等,内径从3mm-50mm,精度可加工P0、P6、P5级;其性能特点为:耐高温、无油自润滑、耐酸、碱、盐腐蚀、耐磨、低噪音、绝缘抗磁、起高速运转;金属纳米陶瓷轴承其生产工艺为新一代的高含量纳米级微粒在热和压力的作用下被激活渗入金属表面,填补金属缝隙和凹坑,使金属表面3-5微米表面更光滑坚固,大大降低其摩擦力,提高金属的奈酸碱性,并大大提高了轴承的寿命,其特性为:长寿命(为普通不锈钢轴承的2-10倍)、低噪音(为普通不锈钢轴承的70%)、耐磨、耐酸、碱、盐腐蚀、耐高温、负载大;陶瓷轴承与金属纳米陶瓷轴承的设计开发以满足市场对高转速、低噪音、高负载、耐腐蚀的需求;机械生产部以生产机杆端关节轴承、直线导轨轴承、油缸耳环、塑料轴承、非标端轴承零部件、玻璃门控五金等高精度产品;并对外提供数控加工。

The etchant gas can be used during a nitride etch step in a process for making a metal oxide semiconductor field effect transistor.

在制造金属氧化物半导体场效应晶体管的工艺中的氮化物腐蚀步骤中,可以使用此腐蚀剂气体。

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