查询词典 molecular beam

For obtaining good structural perfection, the molecular beam epitaxial growth of Ge〓Si〓 on Si substrate should not only be in pseudomorphic form but also in layer-by-layer growth stage.

本文通过对Ge〓Si〓/Si异质体系的生长模式的研究发现，Ge〓Si〓在Si衬底上只能在一定的厚度范围内保持二维生长，超过这一厚度范围就变成三维生长。

There are about 1% of undecomposed As〓 molecules in GaAs grown by molecular beam epitaxy at low temperatures.

利用X射线双晶衍射仪实现了非破坏性定量测量半绝缘GaAs单晶的化学配比。

Based on the project requirements, the research has focused on the confined electronic states in the semiconductor surface quantum wells. The moden quantum theory and advanced material growth technology have been used. The interband transitions in the surface quantum well have been studied by the in-situ photo-modulated reflection spectroscopy combined with the molecular beam epitaxy system. The optical transitions, including the tansition between ground or excited states of the electron and hole states, have been directly observed.

根据项目任务书的要求，本项研究在现代量子理论与先进材料生长技术基础上对半导体表面量子阱阱结构中的受限电子能态进行系统的光谱实验与理论研究，通过与分子束外延设备直接耦合的光调制光谱手段在原子层量级上直接观测到了表面量子阱中本征能态间的光跃迁特性，其中包括基态间的跃迁和激发态间的跃迁。

Based on the above investigation of ideal layer-by-layer growth process, the surface roughening phenomena during the real epitaxial growth are discussed. Some important microscopic dynamic models for molecular-beam epitaxy , which have attracted much attention recently, are studied. Using the master-equation method, the corresponding growth equations are directly derived, and then the scaling behaviors, the universalities, as well as the crossover effects are determined.

在这一理想层状外延生长研究的基础上对实际外延生长过程中十分显著的表面粗化现象进行了探讨，深入研究了几类近年来受到广泛关注的描述分子束外延生长的重要的微观动力学生长模型，采用主方程方法直接得到了相应的非线性生长方程，并确定了标度性质、普适类以及渡越行为。

These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.

这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。

Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.

采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构。

Compared with metal organic chemical vapor deposition and magnetron sputtering, laser molecular beam epitaxy is an advanced technology developed in recent years and has stronger and stronger co...

在讨论ZnO薄膜基本特性的基础上，较为详细地论述了激光分子束外延技术及其在氧化锌薄膜制备中的应用和取得的新进展。

The InGaAs/GaAs/AlGaAs strained layer quantum well lasers were grown by molecular beam epitaxy. Ridge waveguide InGaAs/GaAs/AlGaAs strained layer quantum well lasers operating in the fundamental transverse mode up to 140 mW at a wavelength of 980 nm were fabricated.

利用分子束外延生长了InGaAs/GaAs/AlGaAs应变量子阱激光器材料并研制出基横模输出功率大于140 mW，激射波长为980 nm的脊形波导应变量子阱激光器，其微分量子效率为0.8 W/A，垂直和平行结平面方向远场发散角分别为28°和6.8°。

The theoretical model is important to understand and perform the experiment in the molecular beam.

此理论模型对于理解和进行分子束实验是非常重要的。

This theoretical model is important to understand or perform the experiment in the molecular beam.

此理论模型对于理解和进行分子束实验是非常重要的。

Methods: Five patients with parkinsonism or dystonia were assigned to general anesthesia using an modified endotracheal tube.

本实验依照人体实验之相关规定进行，五位患有帕金森氏症或肌张力异常的病人接受神经立体定位手术。

If you can benefit from this book, it is our honour.

如果您能从本书获益，这将是我们的荣幸。