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junction type transistor相关的网络例句

查询词典 junction type transistor

与 junction type transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The results indicate that: the macroslructural features of seed surface, including smooth type, rugulose type and tuberculate type, may suggest the evolutionary trend from smooth type to rugulose type, from rugulose type to tuberculate type; the microstructural features of outer epidermis can be divided into two types, viz. verrucate type and reticulate type. The former included S. grandiflora, S. chinensis, S. elongata, S. lancifolia, S pubescens, S. henryi, S. repanda, the latter included S. propinqua and .S. plena.

结果表明:该属的种子宏观形态呈现平滑、细皱纹或瘤状突起,并认为五味子属种子形态可能有从平滑到有细皱纹再到有瘤状突起的演化趋势;该属种皮表面微观形态可分为疣状突起型(如:大花五味子、北五味子、东亚五味子、狭叶五味子、毛叶五味子、翼梗五味子和二色五味子)和网纹型。

Explosion-proof tools produced include the following major categories: A, hand chain hoist, pulley , table vice, sleeve and attachment type B, a variety of wrenches, pipe clamp type, such as plum blossom wrench stay, percussion wrench C, hammer type, such as Sledge Hammer, hammer nipple, hammer D, sub-soil knife, knife derusting , flat spade type, down-type E, crowbar-type F, pliers, scissors type, such as Dramix clamp, clamp Lei G, screwdriver-type H, the top, listening to the needle-type I, to pumps, buckets, Rama and other sundry goods J, portfolio suite tools and explosion-proof hand chain hoist is a national patent product, patent No.

公司生产的防爆工具包括以下几大类:A、手拉葫芦、滑车、台虎钳、套筒及附件类 B、各种扳手、管钳类,如梅花呆扳手、敲击扳手C、锤子类,如八角锤、奶头锤、榔头 D、泥子刀、除锈刀、扁铲类、挫类 E、撬棍类 F、钳子、剪刀类,如克丝钳、鲤鱼钳 G、螺丝刀类 H、顶尖、听针类 I、提油泵、水桶、拉马等杂品 J、组合套装工具类,且防爆手拉葫芦是国家专利产品,专利号为:

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管,包括P型衬底,在P型衬底上设有深N型阱,在深N型阱上设有N型阱和P型漂移区,在N型阱上设有N型接触孔、P型源及场氧化层,在P型漂移区上设有P型漏及场氧化层,其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The results indicated that visitors' activities caused a serious influence on the soil in the park, especially in the two most used scenic spots-Yellowstone Village and Gold Whip Stream. The impact of tourism on soil mainly occurred within 3 m along the trails. The impact shapes are classified into six type as single-sided node type, double-sided node type, cross node type, single-sided linkage type, double-sided linkage type and short-cut linkage type. Of six types of impact shapes, the single-sided node type and double-sided type were dominant. The average water contents of soil for six scenic spots at sample areas of 1 m, 2 m and 3 m from trial is 36.6%, 24.5% and 2.2% lower than that of the control area, respectively. The average soil hardness for six scenic spots at 1m, 2 m, and 3m from the trails tramped increased 167.9%, and 122.2%, and 15.8%, respectively, compared with the control area. Soil bulk density increased 26.5% at 1 m and 20.9% at 2 m from the trails.

结果表明:游客活动对张家界世界地质公园土壤产生了较大的影响,特别是在游客相对集中的黄石寨景区和金鞭溪景区,影响十分明显;游客对土壤影响的范围主要发生在距游道两侧3米以内的范围;公园内土壤影响形态可分为单侧节型、双侧节型、单侧链型、双侧链型、十字节型和捷径链型6种类型,其中又以单侧节型和双侧节型为主;在六个景区中,距游道边缘1米、2米及3米范围内土壤的平均含水率较对照区分别低了36.6%、24.5%和2.2%;与对照区相比,距游道边缘1米、2米及3米的土壤硬度分别增加了167.9%、122.2%和15.8%,而距游道边缘1米和2米范围内的土壤容重则分别比对照区增加了26.5%和20.9%。

Connecting method:its structure may be diveided intonon-connection block type, eay terminal block type, antisplash junction block type, water-proof wire connecting block type, explosion isolating terminal block type, socket type and so on.

接线方式:其结构可分为无接线盒式、简易式、防溅型接线盒式、防水型接线盒式、隔爆型接线盒式、插座式等。

The results are indicated that only the strength of gap junction is large enough, can the abnormal oscillation propagate to synchronize the other neurons around and the process is chaotic and complex;the nonlinear and complexity of the oscillations with strong strength of gap junction are larger than that of oscillation with weak strength of gap junction.

结果表明:只有电突触耦合达到一定强度时,异常振荡才能传导并引起神经元的同步振荡;传导活动是混沌和复杂的;在突触耦合强度较强时的神经元活动的非线性和复杂性要强于其在突触强度较弱时的。

Three results are received:(1) The population of neurons can synchronize when the strength of gap junction is large enough and the process is chaotic and complex;(2) The nonlinear and complexity of the seriously disorder oscillation are larger than that of slightly disorder oscillation in a 2-D network;(3) The nonlinear and complexity of the oscillations with strong strength of gap junction are larger than that of that with weak strength of gap junction.

结果表明:电突触达到一定强度时神经元群才能同步振荡,这种活动是混沌和复杂的;同一网络中异常节律较严重的神经元活动的非线性和复杂性要强于异常节律较轻微的神经元;突触耦合强度较强时的神经元活动的非线性和复杂性要强于其在突触耦合强度较弱时的。

In recent years, the company focus on developing solar junction box and connectors products, current products ranging from 5W to 500W and so a full range of sections of the junction box, and developed specifically for second-generation thin-film modules using junction box, our products are by TUV certified and meet the RoHS directive, and apply to a variety of backplane, and TPT, TPE, PYE and glass and so on back to match.

近年来,公司重点开发太阳能接线盒和连接器产品,目前产品已涵盖从5W到500W等全系列的各款接线盒,并开发出专供第二代薄膜组件使用的接线盒,公司产品已通过TUV认证并符合RoHS指令,且适用于多种背板,与TPT、TPE、PYE以及玻璃等多种背板相匹配。

Each bypassing circuit is connected in parallel with a junction formed by the input and second terminals of an associated one of the transistors to limit a voltage across the junction when the junction is reverse biased.

每个旁路电路与由相关的一个晶体管的输入端和第二端子形成的结并联连接,以便当该结被反向偏置时限制该结上的电压。

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟,优化了CI-LIGBT的阳极区结构,指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键,而n〓阳极区结深相对p〓阳极区结深越大,器件的限流能力越强;分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响,得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优,其导通压降仅比普通LIGBT高0.6V;分析了温度对LIGBT闩锁性能的影响,表明CI-LIGBT即使在450K的高温下也不会闩锁,尤其适用于高温工作环境。

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