查询词典 junction transistor

Its possible causes are: the transistor operating point is not the choice of a good, high-voltage filter capacitor leakage or damage, leakage heat regulator diode, rectifier diode damage.

其可能原因有：晶体管工作点未选择好，高压滤波电容漏电或损坏，稳压二极管发热漏电，整流二极管损坏等。

The design of high-voltage transistor directly determines the performance of chips.

高压晶体管设计的好坏将直接影响芯片性能的优劣。

See also Nozaki et al.,"A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, which describes a similar element in a split-gate configuration where a doped polysilicon gate extends over a portion of the memory element channel to form a separate select transistor.

还参见Nozaki等人的&A1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application&(IEEE Journal of Solid-State Circuits，第26卷，第4期，1991年4月，497-501页)，其描述了处于分裂栅极配置中的类似元件，其中掺杂的多晶硅栅极在存储器元件沟道的一部分上延伸以形成单独的选择晶体管。

A novel composite-channel Al x Ga1- x N/Al y Ga1- y N/GaN high electron mobility transistor has designed and optimized.

对新型复合沟道Al x Ga1- x N/Al y Ga1- y N/GaN高电子迁移率晶体管进行了优化设计。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

The invention discloses a film transistor array, which has several shared wirings to provide storing capacitance for pixel.

一种薄膜晶体管数组，具有多条用以提供像素储存电容的共享配线。

This also means that the polarity of the voltages must be correct for the type of transistor.

这也说明电压极性必须根据晶体管的类型来改变。

Roger since the invention of the transistor oscillation push-pull single transformer DC converters, is to achieve high-frequency conversion control circuit beginning in 1957 the U.S. investigation self-invented the push-pull Two-transformer, 1964 U.S. scientists have proposed abolition of the frequency of the series switching power supply transformer, as envisaged in this power to the volume and weight of the decline was a fundamental way.

Roger发明的自激振荡推挽晶体管单变压器直流变换器，是实现高频转换控制电路的开端，1957年美国查赛（Jen Sen发明了自激式推挽双变压器，1964年美国科学家们提出取消工频变压器的串联开关电源的设想，这对电源向体积和重量的下降获得了一条根本的途径。

An integrated circuit substrate (22) is provided with a transistor gate member (36) that has opposing sidewalls.

集成电路衬底(22)被提供成具有带相反的侧壁的晶体管栅元件(36)。

Th is paper presents a novel hybrid circuit breaker device whose motion part is composed of Insulated Gate Bipolar Transistor and Mechanical Circuit Breaker .

将机械开关的静态特性和固态开关的快速性相结合研制了一种新型混合式断路器装置。

This paper designs the communication system of radio telescope FAST.

针对500m口径球面射电望远镜FAST分布式控制系统的特点完成了其通信系统的设计。

Political sheep's step-by-step a large number of fossils unearthed in the county soil Ma Ali after rural village in the middle of sallow pelitic siltstone.

步氏和政羊化石大量出土于广河县阿力麻土乡后山村，产于灰黄色泥质粉砂岩中。