查询词典 junction transistor

So, this paper presents a interleaved two transistor forward with PFC ahead.

因此本文介绍了一种前端带功率因数校正的交错并联双管正激变换器。

Secondly, based on process characteristics and spice tools, this work presents the transistor level of pipelined ADC.

再根据工艺参数和EDA工具设计出了晶体管级电路并进行了全电路性能仿真。

If the output is interrupted for more than 7 seconds, a transistor goes "high" which then activates the solenoid valve to "blow" ballast.

如果输出是中断了700多秒，晶体管云：&高&，然后激活电磁阀，以&打击&镇流器。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

The product the company has is as follows: Automatic Bottle Arranging Machine, Two-end Sifting Counting Machine, Photoelectricity Counting Machine, Automatic Stuffing Machine, Automatic Claw Type Cap Unscrewing Machine, Transistor Electromagnetism Induction Hole Enveloping Machine, Non-Dry Tape Marking Machine, Multi-functional Non-dry Tape Marking Machine, Combination Machine of Two-end Sifting Counting and Stuffing, Liquid Canned Machine, etc.

公司现有产品：自动理瓶机、双头筛动式数片机、动塞纸机、自动爪式旋盖机、高速搓式旋盖机，晶体管电磁感应封口机，不干胶贴标机，多功能不干胶贴标机，双头筛动数片塞纸组合机、液体灌装机等产品。

With gate-all-around cylindrical architecture,the transistor is controlled by an essentially infinite number of gates surrounding the entire cylinder-shaped channel.

就圆柱体全包围栅场效应管器件结构而言，该器件由无数多个将圆柱体形沟道全部包围的栅所控制。

With gate-all-around cylindrical architecture,the transistor is controlled by an essen-tially infinite number of gates surrounding the entire cylinder-shaped channel.

就圆柱体全包围栅场效应管器件结构而言，该器件由无数多个将圆柱体形沟道全部包围的栅所控制。

The source diffusion layer and the drain diffusion layer are formed integral with each other, so that the protection circuit on the input end is substantially constituted of one buffer transistor.

源扩散层和漏扩散层相互形成整体，使输入端的保护电路基本上构成一个缓冲晶体管。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为：辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加；同时也导致转移晶体管的阈值电压漂移，这是造成器件性能退化的主要原因。

This paper designs the communication system of radio telescope FAST.

针对500m口径球面射电望远镜FAST分布式控制系统的特点完成了其通信系统的设计。

Political sheep's step-by-step a large number of fossils unearthed in the county soil Ma Ali after rural village in the middle of sallow pelitic siltstone.

步氏和政羊化石大量出土于广河县阿力麻土乡后山村，产于灰黄色泥质粉砂岩中。