查询词典 hell gate

Multiple value logic ; Discrete logic ; 4 value NOR gate ; 4 value NAND gate ; 4 value NAD OR NOT gate ; Five state gate ; DYL circuit

多值逻辑；离散逻辑；四值"或非"门；四值"与非"门；四值"与或非"门；五态门； DYL电路

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

There are four key segments in the design of the dry-dock falling gate, which have been studied in this paper: the research on the dry-dock falling gates structure design; the research on the dynamic characteristics about the dry-dock falling gate; the research on the parametric modeling of the dry-dock falling gate; the research on special simulative system of the dry-dock falling gate.

本文从四个方面对气控式干船坞卧倒门作了较深入的研究：气控式干船坞卧倒门结构设计的研究；气控式干船坞卧倒门动力学特性的研究；气控式干船坞卧倒门参数化建模的研究；气控式干船坞卧倒门专用仿真系统的研究。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

When gating directly onto a thin wall with a sprue gate, pin point gate, or hot drop, etc., gate wells should be used to help reduce stress at the gate, aid in filling, and minimize part damage when degating.

薄壳技术 Thin-wall Technology Thin经由浇道浇口，针点浇口，二次热浇道浇口等直接进浇到薄壁，应使用浇口井，以减少浇口应力，帮助充填，并将制品在去浇口时的损毁降到最低。

The bottom of the disc is made of knife-shaped gate with a cut off function of the medium. When gate is closed , oblique plane of gate valve encounters wedge block of gate to achieve sealing effect.

闸板底部做成刀形斜面具有切断介质功能，而且闸板关闭时通过阀体上的锲块紧靠闸板斜切面使得闸板紧紧贴靠阀座密封面，从而起到了密封效果。

Composed of round door frames, gate, rack , sealing strip, adjustable structure of sealing , this kind of sealing principle is door frame is fixed on square pipe of pool and wall, rack is fixed on door frame and wall, through rack opens and closes till weld block of gate meets with weld block of rack to make sealing surface of gate close to sealing surface of door frame to achieve sealing .Besides , sealing of gate and sealing of door frame are made of inlaid copper which is well resistance ,It makes valve with well sealing ,wear resistance , corrosion resistance, easily operation, convenient installation , long life , wildly usage.

本闸门是由圆型门框、闸板、导轨、密封条、可调整密封机构等部件组成，其密封原理是门框固定于水池圆型管道及墙壁上，导轨固定门框与墙壁上，闸板通过导轨做启闭动作，直到闸板上的锲块碰到导轨条上的锲块，使得闸门密封面紧靠门框上的密封面，从而起到密封效果，另外闸板密封面跟门框密封面都是镶铜材质的，具有耐磨损的特性，使得阀门密封密封性好、耐磨性强、耐腐蚀、操作简单、安装方便、使用寿命长、适应性广等特点。

Composed of square door frames, gate, rack , sealing strip, adjustable structure of sealing , this kind of sealing principle is door frame is fixed on square pipe of pool and wall, rack is fixed on door frame and wall, through rack opens and closes till weld block of gate meets with weld block of rack to make sealing surface of gate close to sealing surface of door frame to achieve sealing .Besides , sealing of gate and sealing of door frame are made of inlaid copper which is well resistance ,It makes valve with well sealing ,wear resistance , corrosion resistance, easily operation, convenient installation , long life , wildly usage.

本闸门是由方型门框、闸板、导轨、密封条、可调整密封机构等部件组成，其密封原理是门框固定于水池方型管道及墙壁上，导轨固定门框与墙壁上，闸板通过导轨做启闭动作，直到闸板上的锲块碰到导轨条上的锲块，使得闸门密封面紧靠门框上的密封面，从而起到密封效果，另外闸板密封面跟门框密封面都是镶铜材质的，具有耐磨损的特性，使得阀门密封密封性好、耐磨性强、耐腐蚀、操作简单、安装方便、使用寿命长、适应性广等特点。

Now, we look at the rate of change of the volume in Hell because Boyle's Law states that in order for the temperature and pressure in Hell to stay the same, the volume of Hell has to expand proportionately as souls are added.

现在， 我们来看一下地狱容积的变化率。因为波义尔定律指出为了保持地狱中温度与压力的衡定，地狱的容积不得不随着灵魂的增加而成比例地扩张。

Now, we look at the rate of change of the volume in Hell because Boyle's Law states that in order for the temperature and pressure in Hell to stay the same, the volume of Hell has to expand

这个理论的推论就是因为地狱早已冻结，所以它不再接收灵魂了，因此它已经灭绝了……只剩天堂了，从而也证明了神的存在，它解释了为什么昨天晚上塔丽莎一个劲地叫噢！

Molecular Distillation is a kind of high vacuum distillation method, which is suitable for the separation of high boiling, heat sensitivity and viscidity products.

分子蒸馏技术是一种在高真空条件下进行的连续蒸馏过程，适合于分离高沸点、热敏性及具有生物活性的混合物。

They are to the Noughties what yuppies were to the Eighties .

那在六十年代是时髦的，但在八十年代肯定是过时了