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etching相关的网络例句

查询词典 etching

与 etching 相关的网络例句 [注:此内容来源于网络,仅供参考]

Half-tone block(Half-tone engraving ): A relief printing plate produced by a photomechanical etching process in which the light and shades of the original are represented by dots of varying sizes.

半色调凸版:用照相及腐蚀制版法造成的凸版。它用晃同大小的点子来表示原稿的光部和暗部。

By image-wise etching away one of the layers in the areas not covered by a resist and finally entirely removing the protective resist, a planographic printing plate of high quality for long run planographic printing in prepared.

通过图像,明智的腐蚀掉一个在不受抵制,最终完全取消保护性抵抗,长期运行在准备平版印刷的高质量平版印刷板所涉领域层。

This phenomenon may result from the dissolution of zinc in the bath and then its reprecipitation on the surface of the alloy in the etching process.

这是因为合金中锌元素在碱洗过程中,由于溶解与再沉积作用,在型材表面富集,从而使合金表面电化学性质不均匀,造成碱洗不均匀,引发雪花状腐蚀。

Etching the surface of germanium layer could decrease the dark current and increase the responsivity under the visible light exposure.

当蚀刻锗层的表面时,我们可以得到较低的暗电流并且提升可见光下的光响应。

Dry etching technologies, especially RIE is described resumptively in this paper, more over, the mechanism and process technology of RIE is also expatiated.

本文对干法刻蚀技术作了概括的阐述,着重介绍反应离子刻蚀,并对其刻蚀机理及其刻蚀工艺作了详细论述。

Having a knowing of etching and retouching of negatives.

懂得底片的整理技术,包括蚀刻和修补法。

The SiO_2 microdisk resonators with vertical sidewall have been achieved with RIBE in the world. 4 Research of the silicon etching.

在国际上首次通过RIBE得到具有垂直侧壁的SiO_2微谐振腔。4对采用适宜的Si刻蚀方法得到SiO_2微盘谐振腔支撑进行实验研究。

The RIE and RIBE methods were presented to transform supermicro pattern. Through studying the influence of etching parameters on surface profile, we gained perfect grating structure on silica substrate.

提出并研究了用RIE和RIBE方法实现微结构面形传递,详细研究了各种刻蚀参数对最终面形的影响,实现了在石英基底上的理想传递。

The native oxides on CdSe surface could be reduced to elemental Selenium by a HF etching process. Bombardment using 100eV Ar〓 ions with a dosage of about 1×10〓 ions/cm〓 could remove all the elemental Selenium, which results in a normal stoichiometrical surface CdSe.

实验观测到HF刻蚀可以将CdSe半导体表面的Se氧化物还原为元素Se.100eV的Ar〓离子轰击可以除去HF刻蚀后在表面还原生成的元素Se,从而清洁样品表面,保证了表面CdSe的化学计量比。

Characterization of etching of Al film and Si substrate with 10% tetramethylammonium hydroxide has been done at a condition of adding various amount of Si dust.

研究了浓度为10%的四甲基氢氧化铵溶液,在不同量的Si粉掺杂下,对铝膜及硅衬底的腐蚀及其pH值的变化。

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